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    SSM4953

    Abstract: No abstract text available
    Text: SSM4953 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) RDS(ON) (mΩ) Max 7 6 5 60 @VGS = -10V -4.5A -30V SO-8 8 1 2 95 @VGS = -4.5V 3 4 D2 (5, 6) D1 (7, 8) FEATURES Super high density cell design for low R DS(ON). Rugged and reliable.


    Original     		PDF SSM4953 SSM4953

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    Abstract: No abstract text available
    Text: SSM4953B Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 70 @VGS = - 10V - 4.5A - 30V 1 125 @VGS = - 5V 2 3 145 @VGS = - 4.5V 4 D2 (5, 6) D1 (7, 8) FEATURES Super high dense cell design for low R DS(ON).


    Original     		PDF SSM4953B

    SSM4953M

    Abstract: No abstract text available
    Text: SSM4953M P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 D2 Low on-resistance D1 D1 Fast switching BVDSS -30V RDS ON 53mΩ -5A ID G2 S2 SO-8 S1 G1 Description D2 D1 MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,


    Original     		PDF SSM4953M SSM4953M