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    Toshiba America Electronic Components SSM3K05FU(TE85L,F)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SSM3K05FU(TE85L,F) 4,800
    • 1 $0.55
    • 10 $0.55
    • 100 $0.55
    • 1000 $0.22
    • 10000 $0.1925
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    SSM3K05FU Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SSM3K05FU Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    SSM3K05FU Toshiba Scan PDF
    SSM3K05FU Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    SSM3K05FUTE85LF Toshiba SSM3K05FUTE85LF - Trans MOSFET N-CH 20V 0.4A 3-Pin USM T/R Original PDF

    SSM3K05FU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSM3K05FU

    Abstract: No abstract text available
    Text: SSM3K05FU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K05FU ○ 高速スイッチング 単位: mm • 小型パッケージで高密度実装に適しています。 • オン抵抗が低い。: RDS ON = 0.8 Ω max (@VGS = 4 V)


    Original     		PDF SSM3K05FU SC-70 SSM3K05FU

    SSM3K05FU

    Abstract: No abstract text available
    Text: SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications • • • Small package Low on resistance : Ron = 0.8 Ω max @VGS = 4 V : Ron = 1.2 Ω max (@VGS = 2.5 V) Low gate threshold voltage Unit: mm


    Original     		PDF SSM3K05FU SSM3K05FU

    Untitled

    Abstract: No abstract text available
    Text: SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications • Small package • Low on resistance : Ron = 0.8 Ω max @VGS = 4 V Unit: mm : Ron = 1.2 Ω max (@VGS = 2.5 V) • Low gate threshold voltage


    Original     		PDF SSM3K05FU SC-70

    Untitled

    Abstract: No abstract text available
    Text: SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications • • • Small package Low on resistance : Ron = 0.8 Ω max @VGS = 4 V : Ron = 1.2 Ω max (@VGS = 2.5 V) Low gate threshold voltage Unit: mm


    Original     		PDF SSM3K05FU

    SSM3K05FU

    Abstract: No abstract text available
    Text: SSM3K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K05FU High Speed Switching Applications • Small package · Low on resistance : Ron = 0.8 Ω max @VGS = 4 V Unit: mm : Ron = 1.2 Ω max (@VGS = 2.5 V) · Low gate threshold voltage


    Original     		PDF SSM3K05FU SC-70 SSM3K05FU

    fet to92

    Abstract: Pch MOS FET SSM3J13T SSM3J16FU ssm3k14t transistor ESM 2SK1830 2SK2035 2SK2825 SSM3J15TE
    Text: Part Number SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 Nch 2SK2825 Nch 2SK2035 Nch SSM3K04FS SSM3K16FS SSM3K15FS 2SJ347 Pch SSM3J16FS SSM3J15FS 2SK1829 Nch 2SK2824 Nch 2SK2034 Nch 2SK2037 Nch SSM3K04FU SSM3K16FU SSM3K05FU


    Original     		PDF SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 2SK2825 2SK2035 fet to92 Pch MOS FET SSM3J13T SSM3J16FU ssm3k14t transistor ESM SSM3J15TE

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


    Original     		PDF 3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    8aa1

    Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
    Text: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAA1 12341D3AG BDJ0099A 8aa1 esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA SSM3K05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K05FU HIGH SPEED SWITCHING APPLICATIONS • Small Package • Low on Resistance Unit in mm 2.1 ± 0.1 1.2510.1 Ron = 0.8 Cl Max. @VQg = 4 V : 3 : Ron = 1.2 O Max. (@VGS = 2.5 V)


    OCR Scan     		PDF SSM3K05FU SC-70

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K05FU Unit in mm HIGH SPEED SWITCHING APPLICATIONS • • • Small Package Low on Resistance : Ron = 0.8 fl Max. @V(jg = 4 V : Ron = 1.2 H Max. (@Vq s = 2.5 V) Low Gate Threshold Voltage


    OCR Scan     		PDF SSM3K05FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE SSM3K05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K05FU Unit in mm HIGH SPEED SWITCHING APPLICATIONS • • • 2.1 ± 0.1 Small Package Low on Resistance : Ron = 0.8 Cl Max. @VQg = 4 V : Ron = 1.2 O Max. (@VGS = 2.5 V)


    OCR Scan     		PDF SSM3K05FU SC-70

    SSM3K05FU

    Abstract: toshiba 2s dp800
    Text: TOSHIBA SSM3K05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K05FU Unit in mm HIGH SPEED SWITCHING APPLICATIONS • • • 2.1 ± 0.1 Small Package Low on Resistance : Ron = 0.8 Cl Max. @VQg = 4 V : Ron = 1.2 O Max. (@VGS = 2.5 V) Low Gate Threshold Voltage


    OCR Scan     		PDF SSM3K05FU SC-70 SSM3K05FU toshiba 2s dp800