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    SSM3K Search Results

    SSM3K Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K56ACT Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 20 V, 1.4 A, 0.235 Ohm@4.5V, CST3 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
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    SSM3K Price and Stock

    Toshiba America Electronic Components SSM3K35AMFV,L3F

    MOSFET N-CH 20V 250MA VESM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSM3K35AMFV,L3F Reel 168,000 8,000
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    Mouser Electronics SSM3K35AMFV,L3F 825,988
    • 1 $0.14
    • 10 $0.087
    • 100 $0.04
    • 1000 $0.029
    • 10000 $0.021
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    TTI SSM3K35AMFV,L3F Reel 24,000 8,000
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    • 10000 $0.0217
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    Toshiba America Electronic Components SSM3K37FS,LF

    MOSFET N-CH 20V 200MA SSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSM3K37FS,LF Cut Tape 134,361 1
    • 1 $0.2
    • 10 $0.119
    • 100 $0.2
    • 1000 $0.04737
    • 10000 $0.04737
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    SSM3K37FS,LF Digi-Reel 134,361 1
    • 1 $0.2
    • 10 $0.119
    • 100 $0.2
    • 1000 $0.04737
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    SSM3K37FS,LF Reel 132,000 3,000
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    • 10000 $0.03911
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    Toshiba America Electronic Components SSM3K16CTC,L3F

    MOSFET N-CH 20V 200MA CST3C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSM3K16CTC,L3F Cut Tape 13,953 1
    • 1 $0.24
    • 10 $0.148
    • 100 $0.24
    • 1000 $0.05959
    • 10000 $0.04563
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    SSM3K16CTC,L3F Digi-Reel 13,953 1
    • 1 $0.24
    • 10 $0.148
    • 100 $0.24
    • 1000 $0.05959
    • 10000 $0.04563
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    SSM3K16CTC,L3F Reel 10,000 10,000
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    Toshiba America Electronic Components SSM3K35AFS,LF

    MOSFET N-CHANNEL 20V 250MA SSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSM3K35AFS,LF Digi-Reel 13,139 1
    • 1 $0.2
    • 10 $0.124
    • 100 $0.2
    • 1000 $0.04946
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    SSM3K35AFS,LF Cut Tape 13,139 1
    • 1 $0.2
    • 10 $0.124
    • 100 $0.2
    • 1000 $0.04946
    • 10000 $0.04946
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    SSM3K35AFS,LF Reel 9,000 3,000
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    • 10000 $0.04088
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    Toshiba America Electronic Components SSM3K336R,LF

    MOSFET N-CH 30V 3A SOT23F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSM3K336R,LF Digi-Reel 11,636 1
    • 1 $0.42
    • 10 $0.258
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    • 1000 $0.1085
    • 10000 $0.1085
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    SSM3K336R,LF Cut Tape 11,636 1
    • 1 $0.42
    • 10 $0.258
    • 100 $0.42
    • 1000 $0.1085
    • 10000 $0.1085
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    SSM3K336R,LF Reel 9,000 3,000
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    • 10000 $0.09149
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    Chip1Stop SSM3K336R,LF 2
    • 1 -
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    Find more SSM3K price and stock on Findchips.com

    SSM3K Datasheets (242)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM3K01F Toshiba Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min 0.6) (max 1.1); R DS On 0.085 (max 0.12); Drain-Source Voltage (V): (max 30); Drain Current (mA): (max 1300) Original PDF
    SSM3K01F Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    SSM3K01F Toshiba Scan PDF
    SSM3K01T Toshiba Original PDF
    SSM3K01T Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    SSM3K01TTE85LF Toshiba SSM3K01TTE85LF - Trans MOSFET N-CH 30V 3.2A 3-Pin TSM T/R Original PDF
    SSM3K01T(TE85L,F) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH TSM S-MOS Original PDF
    SSM3K02F Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    SSM3K02F Toshiba Scan PDF
    SSM3K02F Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    SSM3K02FTE85LF Toshiba SSM3K02FTE85LF - Trans MOSFET N-CH 30V 1A 3-Pin S-Mini T/R Original PDF
    SSM3K02T Toshiba Small-signal MOS FET Original PDF
    SSM3K03FE Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    SSM3K03FE Toshiba N-Channel MOSFET Original PDF
    SSM3K03FE Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    SSM3K03FE Toshiba Scan PDF
    SSM3K03FV Toshiba Silicon N-Channel MOSFET Original PDF
    SSM3K03TE Toshiba Small-signal MOS FET Original PDF
    SSM3K04FE Toshiba Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: ESM; XJE016 JEITA: SC-89; Number of Pins: 3; Comments: Built-in R_GS=1M V th (V): (min 0.7) (max 1.3); R DS On 4 (max 12); Drain-Source Voltage (V): (max 20); Drain Current (mA): (max 100) Original PDF
    SSM3K04FE Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    ...

    SSM3K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SSM3K15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III SSM3K15AFU Load Switching Applications Unit: mm • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF SSM3K15AFU

    SSM3K126

    Abstract: No abstract text available
    Text: SSM3K126TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K126TU Target Specification High-Speed Switching Applications • • 4.0 V drive Low ON-resistance: Unit: mm Ron = 71 mΩ max (@VGS = 4.0 V) Ron = 38 mΩ (max) (@VGS = 10 V) 2.1±0.1


    Original     		PDF SSM3K126TU SSM3K126

    Untitled

    Abstract: No abstract text available
    Text: SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High-Speed Switching Applications Optimum for high-density mounting in small packages Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10


    Original     		PDF SSM3K04FV

    Untitled

    Abstract: No abstract text available
    Text: SSM3K329R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K329R ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm • 1.8-V drive • Low ON-resistance: RDS ON = 289 mΩ (max) (@VGS = 1.8 V) : RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)


    Original     		PDF SSM3K329R OT-23F

    Untitled

    Abstract: No abstract text available
    Text: SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications High-Speed Switching Applications Unit: mm Ron = 140 mΩ max (@VGS = 1.5 V) Ron = 93 mΩ (max) (@VGS = 1.8 V) Ron = 63 mΩ (max) (@VGS = 2.5 V)


    Original     		PDF SSM3K121TU

    SSM3K320T

    Abstract: No abstract text available
    Text: SSM3K320T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ SSM3K320T High-Speed Switching Applications Unit: mm 4.5 V drive Low ON-resistance : Ron = 77 mΩ (max) (@VGS = 4.5 V) : Ron = 50 mΩ (max) (@VGS = 10 V) +0.2 2.8-0.3 0.4±0.1


    Original     		PDF SSM3K320T SSM3K320T

    SSM3K318T

    Abstract: No abstract text available
    Text: SSM3K318T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ SSM3K318T ○ Load Switching Applications ○ High-Speed Switching Applications +0.2 2.8-0.3 4.5 V drive Low ON-resistance : RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) : RDS(ON) = 107 mΩ (max) (@VGS = 10 V)


    Original     		PDF SSM3K318T SSM3K318T

    SSM3K302T

    Abstract: No abstract text available
    Text: SSM3K302T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K302T Power Management Switch Applications High Speed Switching Applications • • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 131 mΩ max (@VGS = 1.8V) Ron = 87mΩ (max) (@VGS = 2.5V)


    Original     		PDF SSM3K302T SSM3K302T

    SSM3K15FU

    Abstract: No abstract text available
    Text: SSM3K15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FU High Speed Switching Applications Analog Switch Applications • • Unit: mm Small package Low on resistance : Ron = 4.0 Ω max (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)


    Original     		PDF SSM3K15FU SSM3K15FU

    SSM3K124TU

    Abstract: No abstract text available
    Text: SSM3K124TU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K124TU ○ DC-DC コンバータ ○ 超高速スイッチング 単位: mm 2.1±0.1 • オン抵抗が低い : Ron = 120 mΩ max (@VGS = 4 V) 1.7±0.1 2.0±0.1 : Ron = 83 mΩ (max) (@VGS = 10 V)


    Original     		PDF SSM3K124TU SSM3K124TU

    SSM3K03TE

    Abstract: No abstract text available
    Text: SSM3K03TE 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K03TE ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm 1.2±0.05 : Vth = 0.7~1.3 V スイッチング速度が速い。 • 小型パッケージで高密度実装に最適。


    Original     		PDF SSM3K03TE 0022g SSM3K03TE

    SSM3K316T

    Abstract: No abstract text available
    Text: SSM3K316T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K316T Power Management Switch Applications High-Speed Switching Applications • • Unit: mm 1.8-V drive Low ON-resistance: Ron = 131 mΩ max (@VGS = 1.8 V) Ron = 87 mΩ (max) (@VGS = 2.5 V)


    Original     		PDF SSM3K316T SSM3K316T

    SSM3K36FS

    Abstract: No abstract text available
    Text: SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS ○ High-Speed Switching Applications Unit: mm • 1.5-V drive • Low ON-resistance : Ron = 1.52 Ω max (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V)


    Original     		PDF SSM3K36FS SSM3K36FS

    SSM3K38MFV

    Abstract: No abstract text available
    Text: SSM3K38MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K38MFV ○ High-Speed Switching Applications ○ Analog Switch Applications 1.2±0.05 1 2 0.32±0.05 0.4 0.8±0.05 0.4 0.8±0.05 0.22±0.05 1.2V drive Low ON-resistance : Ron = 20 Ω max (@VGS = 1.2 V)


    Original     		PDF SSM3K38MFV SSM3K38MFV

    SSM3K7002F

    Abstract: SSM3K7002
    Text: SSM3K7002F TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Analog Switch Applications Unit: mm +0.5 2.5-0.3 +0.25 1.5-0.15 : Ron = 3.3 Ω max (@VGS = 4.5 V) 2.9±0.2 : Ron = 3.2 Ω (max) (@VGS = 5 V)


    Original     		PDF SSM3K7002F SSM3K7002F SSM3K7002

    SSM3K303T

    Abstract: No abstract text available
    Text: SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications • 4 V drive • Low ON-resistance: Unit: mm Ron = 120 mΩ max (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF SSM3K303T SSM3K303T

    SSM3K15CT

    Abstract: No abstract text available
    Text: SSM3K15CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K15CT High-Speed Switching Applications Analog Switch Applications Unit: mm Optimum for high-density mounting in small packages • Low ON-resistance 0.6±0.05 0.5±0.03 : Ron = 4.0 Ω max (@VGS = 4 V)


    Original     		PDF SSM3K15CT SSM3K15CT

    Untitled

    Abstract: No abstract text available
    Text: SSM3K35CT シリコン N チャネル MOS 形 東芝電界効果トランジスタ SSM3K35CT ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 1.2 V 駆動です。 • オン抵抗が低い : Ron = 20 Ω 最大 (@VGS = 1.2 V)


    Original     		PDF SSM3K35CT

    Untitled

    Abstract: No abstract text available
    Text: SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS ○ High-Speed Switching Applications Unit: mm • 1.5-V drive • Low ON-resistance : Ron = 1.52 Ω max (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V)


    Original     		PDF SSM3K36FS

    SSM3K01F

    Abstract: No abstract text available
    Text: SSM3K01F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 120 mΩ max (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)


    Original     		PDF SSM3K01F O-236MOD SSM3K01F

    SSM3K16FV

    Abstract: No abstract text available
    Text: SSM3K16FV 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K16FV ○ 高速スイッチング用 ○ アナログスイッチ用 : Ron = 4.0 Ω 最大 (@VGS = 2.5 V) 1.2±0.05 : Ron = 15 Ω (最大) (@VGS = 1.5 V) 絶対最大定格 (Ta = 25°C)


    Original     		PDF SSM3K16FV SSM3K16FV

    SSM3K7002FU

    Abstract: D600500
    Text: SSM3K7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K7002FU High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance Unit: mm : Ron = 3.3 Ω max (@VGS = 4.5 V) 2.1± 0.1 : Ron = 3.2 Ω (max) (@VGS = 5 V)


    Original     		PDF SSM3K7002FU SSM3K7002FU D600500

    SSM3K7002FU

    Abstract: IDG-500
    Text: SSM3K7002FU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K7002FU 高速スイッチング用 アナログスイッチ用 単位: mm 2.1± 0.1 目 記 号 定 格 VDS 60 V ゲ ー ト ・ ソ ー ス 間 電 圧 VGSS ± 20 V DC ID


    Original     		PDF SSM3K7002FU SC-70 SSM3K7002FU IDG-500

    SSM3K105TU

    Abstract: No abstract text available
    Text: SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switching Applications Unit: mm Ron = 480mΩ max (@VGS = 3.3V) Ron = 200mΩ (max) (@VGS = 4V) Ron = 110mΩ (max) (@VGS = 10V) 2.1±0.1 Drain-Source voltage Rating


    Original     		PDF SSM3K105TU SSM3K105TU