SOT23-6
Abstract: SSF2429 "battery protection" battery protection sot23-6 TOP marking sot23-6
Text: SSF2429 DESCRIPTION D The SSF2429 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G GENERAL FEATURES S ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V
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Original
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PDF
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SSF2429
SSF2429
OT23-6
OT23-6
180mm
25unless
SOT23-6
"battery protection"
battery protection sot23-6
TOP marking sot23-6
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Mosfet
Abstract: SSF2429
Text: SSF2429 20V P-Channel MOSFET DESCRIPTION D The SSF2429 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. G GENERAL FEATURES S ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V
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Original
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PDF
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SSF2429
SSF2429
OT23-6
OT23-6
180mm
Mosfet
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Untitled
Abstract: No abstract text available
Text: SSF2429 DESCRIPTION D The SSF2429 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G GENERAL FEATURES S ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V
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Original
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PDF
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GDSSF2429
SSF2429
OT23-6
SSF2429
OT23-6
180mm
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