Mosfet
Abstract: SSF2418EB
Text: SSF2418EB 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected.
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SSF2418EB
SSF2418EB
OT23-6
Mosfet
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2418E
Abstract: No abstract text available
Text: SSF2418EBK DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES Schematic diagram
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GDSSF2418EBK
SSF2418EBK
OT23-6
OT23-6
2418E
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Untitled
Abstract: No abstract text available
Text: SSF2418B DESCRIPTION The SSF2418B uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES Schematic diagram
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GDSSF2418B
SSF2418B
OT23-6
OT23-6
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Mosfet
Abstract: SSF2418B SSF2418
Text: SSF2418B 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418B uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected.
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SSF2418B
SSF2418B
OT23-6
Mosfet
SSF2418
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2418E
Abstract: SSF2418E SOT23-6 Marking .64 SOT23-6 "battery protection" SOT23-6 MARKING SSF2418 battery protection sot23-6 55A SOT23-6
Text: SSF2418E DESCRIPTION The SSF2418E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES Schematic diagram
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SSF2418E
SSF2418E
Rating2000V
OT23-6
2418E
SOT23-6 Marking .64
SOT23-6
"battery protection"
SOT23-6 MARKING
SSF2418
battery protection sot23-6
55A SOT23-6
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Untitled
Abstract: No abstract text available
Text: SSF2418EB DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected. GENERAL FEATURES Schematic diagram
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Original
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PDF
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GDSSF2418EB
SSF2418EB
OT23-6
OT23-6
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Mosfet
Abstract: SSF2418EBK
Text: SSF2418EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected.
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Original
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PDF
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SSF2418EBK
SSF2418EBK
OT23-6
Mosfet
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Mosfet
Abstract: SSF2418E 2418E
Text: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF2418E
18mohm
OT23-6
2418E
Mosfet
SSF2418E
2418E
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