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    SSD200 Search Results

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    SSD200 Price and Stock

    Pentair Equipment Protection - Hoffman LSSD2000

    ESPAGNOLETTE SYSTEM 2000
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    DigiKey LSSD2000 Bulk 1
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    Rochester Electronics LLC SSD2007ATF

    MOSFET 2N-CH 50V 2A 8SOIC
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    DigiKey SSD2007ATF Bulk 523
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    onsemi SSD2007ATF

    MOSFET 2N-CH 50V 2A 8SOIC
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    onsemi SSD2007ASTF

    MOSFET 2N-CH 50V 2A 8SOIC
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    Vishay Semiconductors VS-SD2000C10L

    DIODE GEN PURP 1KV 2100A DO200AB
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    SSD200 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSD2003 Samsung Electronics Dual N-Channel Power MOSFET Scan PDF
    SSD2005 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSD2007 Fairchild Semiconductor Dual N-CHANNEL POWER MOSFET Original PDF
    SSD2007 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSD2007A Fairchild Semiconductor Dual N-Channel Power MOSFET Original PDF
    SSD2007ASTF Fairchild Semiconductor 50V N-Channel Dual Power MOSFET Original PDF
    SSD2007ATF Fairchild Semiconductor 50V N-Channel Dual Power MOSFET Original PDF
    SSD2008A Fairchild Semiconductor 30V N/P Dual Power MOSFET Original PDF
    SSD2009 Fairchild Semiconductor Dual N-CHANNEL POWER MOSFET Original PDF
    SSD2009A Fairchild Semiconductor Dual N-Channel Power MOSFET Original PDF
    SSD2009ATF Fairchild Semiconductor 50V N-Channel Dual Power MOSFET Original PDF

    SSD200 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SSD2008

    Abstract: SSD2008A
    Text: SSD2008A !"#$ !"#$%&'!! *#+,(-*.+/0(1 FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 • Lower RDS(ON) S2 3 6 D2 ■ Improved Inductive Ruggedness ■ Fast Swtching Times G2 4 5 D2 ■ Low Input Capacitance ■ Extended Safe Operating Area D1 D1 Top View S2 ■ Improved High Temperature Reliability


    Original     		SSD2008A SSD2008 SSD2008 SSD2008A PDF

    SSD2007A

    Abstract: ISS106
    Text: SSD2007A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOP ‰ Extremely Lower RDS ON ‰ Improved Inductive Ruggedness ‰ Fast Switching Times S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View ‰ Rugged Polysilicon Gate Cell Structure ‰ Low Input Capacitance D1,D2


    Original     		SSD2007A SSD2007A ISS106 PDF

    transistor ssd2008

    Abstract: SSD2008 SSD2008A Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v
    Text: SSD2008A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 ! Low Input Capacitance ! Extended Safe Operating Area D1 D1 Top View D2 D2 ! Improved High Temperature Reliability


    Original     		SSD2008A SSD2008 transistor ssd2008 SSD2008 SSD2008A Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v PDF

    Untitled

    Abstract: No abstract text available
    Text: SSD2009A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC n Lower RDS ON n Improved Inductive Ruggedness n Fast Swtching Times S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View n Low Input Capacitance n Extended Safe Operating Area D1 D1 n Improved High Temperature Reliability


    Original     		SSD2009A SSD2009 PDF

    PN channel MOSFET 10A

    Abstract: SSD2009 SSD2009A
    Text: SSD2009A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1,D2 D1,D2 ! Improved High Temperature Reliability


    Original     		SSD2009A SSD2009 PN channel MOSFET 10A SSD2009 SSD2009A PDF

    Untitled

    Abstract: No abstract text available
    Text: SSD2007A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOP S1 1 8 D1 G1 2 7 D1 ! Extremely Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance D1,D2 D1,D2


    Original     		SSD2007A PDF

    Untitled

    Abstract: No abstract text available
    Text: SSD2009A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1,D2 D1,D2 ! Improved High Temperature Reliability


    Original     		SSD2009A SSD2009 D2009ATF PDF

    SSD2007A

    Abstract: No abstract text available
    Text: SSD2007A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOP S1 1 8 D1 G1 2 7 D1 ! Extremely Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance D1,D2 D1,D2


    Original     		SSD2007A SSD2007A PDF

    ssd1001

    Abstract: HDD spindle motor circuit SSD1002 pump motor 12v datasheet spindle motor circuit sensorless circuit SSD2003 1.5A 2A voice coil Driver "BANDGAP REFERENCE" cross bldc electric drive spindle
    Text: www.fairchildsemi.com KA2811C 12V Spindle Motor and Voice Coil Motor Driver Features Description SMP Circuit The KA2811C is a monolithic one-chip IC which includes SPM Spindle motor driver, VCM (Voice coil motor) driver and peripheral driver, designed for driving HDD motor. For


    Original     		KA2811C KA2811C ssd1001 HDD spindle motor circuit SSD1002 pump motor 12v datasheet spindle motor circuit sensorless circuit SSD2003 1.5A 2A voice coil Driver "BANDGAP REFERENCE" cross bldc electric drive spindle PDF

    KA3120

    Abstract: 12v DC MOTOR SPEED CONtrol ic Hdd spindle motor back-emf HDD spindle motor circuit HDD circuit schematic
    Text: PRELIMINARY HDD PRODUCTS KA3120 SPINDLE & VOICE COIL MOTOR ONE CHIP DRIVER 48-QFPH-1414 The KA3120 is an ASIC combination chip, which was designed for the HDD, includes the following functions: spindle motor drive, voice coil motor drive, retract and power management.


    Original     		KA3120 48-QFPH-1414 KA3120 KA3120. 12v DC MOTOR SPEED CONtrol ic Hdd spindle motor back-emf HDD spindle motor circuit HDD circuit schematic PDF

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    hdd spindle motor

    Abstract: PC hdd CIRCUIT diagram cstm ssd1001 KA2811C "BANDGAP REFERENCE" cross SSD2003 npn-pnp dual
    Text: HDD PRODUCTS KA2811C SPM + VCM 1 CHIP DRIVER 48-QFPH-1414 The KA2811C is a monolithic IC and an one-chip IC which includes SPM Spindle motor driver, VCM (Voice coil motor) driver and peripheral driver, designed for driving HDD motor. For high starting torque and high speed, SPM


    Original     		KA2811C 48-QFPH-1414 KA2811C hdd spindle motor PC hdd CIRCUIT diagram cstm ssd1001 "BANDGAP REFERENCE" cross SSD2003 npn-pnp dual PDF

    spindle and VCM motor controller

    Abstract: 3 phase bldc controller hdd vcm controller brake failure indicator result brake failure indicator hard drive spindle motors diagram FAN8621B spindle motor VCM controller 64 12v back-emf RB4110
    Text: www.fairchildsemi.com FAN8621B 12V Spindle Motor and Voice Coil Motor Driver IC Features Description General The FAN8621B, is a Bipolar monolithic stand-alone IC, designed for 12V HDD applications.The internal power stage consists of vertical PNP and NPN TRs for both SPM


    Original     		FAN8621B FAN8621B, spindle and VCM motor controller 3 phase bldc controller hdd vcm controller brake failure indicator result brake failure indicator hard drive spindle motors diagram FAN8621B spindle motor VCM controller 64 12v back-emf RB4110 PDF

    SSD2005

    Abstract: P-CHANNEL POWER MOSFET
    Text: SSD2005 Dual P-CHANNEL POWER MOSFET FEATURES 8SOIC • Lower Rds on ■ improved Inductive Ruggedness Si ■ Fast Switching Times gi q t ■ Lower Input Capacitance ■ Extended Safe Operating Area ■ Improved High Temperature Reliability [T o S2 ~8~l Pi


    OCR Scan     		SSD2005 SSD2005 P-CHANNEL POWER MOSFET PDF

    c550c

    Abstract: mosfet 751
    Text: SSD2004 N&P-CHANNEL POWER MOSFET FEATURES 8 SOIC • Lower Rds on ■ Improved Inductive Ruggedness si [ T ~BlD i ■ Fast Switching Times Gì [ j T ~ n 01 ■ Lower Input Capacitance Si [ X ~6~l Dì Gj [ T H jD i ■ Extended Safe Operating Area ■ Improved High Temperature Reliability


    OCR Scan     		SSD2004 SSD2004 00A/ns c550c mosfet 751 PDF

    SSD2009

    Abstract: TP150 2TS01
    Text: DUAL N-CHANNEL POWER MOSFETS SSD2009 FEATURES • • • • • • • 8SO IC Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		SSD2009 SSD2009 TP150 2TS01 PDF

    SSD2004

    Abstract: 250M
    Text: N&P-CHANNEL POWER MOSFETS SSD2004 FEATURES • Extremely Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		SSD2004 SSD2004 00A/iiS 300//s, 250M PDF

    SSD2003

    Abstract: U2020 W749
    Text: SSD2003 Dual N-CHANNEL POWER MOSFET FE A T U R E S • Lower Rds on ■ Improved Inductive Ruggedness ■ Fast Switching Times ■ Lower Input Capacitance ■ Extended Safe Operating Area ■ Improved High Temperature Reliability Product Summary Part Number


    OCR Scan     		SSD2003 SSD2003 00A/ns U2020 W749 PDF

    SSD2007

    Abstract: LS125A mosfet n-channel 12 amperes Power MOSFET 50V 20A
    Text: DUAL N-CHANNEL POWER MOSFET SSD2007 FEATURES • Extremely Lower R 8SOIC ds o ni • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		SSD2007 SSD2007 250eA LS125A mosfet n-channel 12 amperes Power MOSFET 50V 20A PDF

    SSD2002

    Abstract: DD214 942 rectifier diode
    Text: N & P-CHANNEL POWER MOSFET SSD2002 FEATURES 8SOIC • Extremely Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		SSD2002 SSD2002 b414E DD214 942 rectifier diode PDF

    SSD2003

    Abstract: 945 mosfet n mosfet n channel k 946 250M
    Text: DUAL N-CHANNEL POWER MOSFET SSD2003 FEATURES • Extremely Lower R d s o n • Improved inductive ruggedness • Fast switching tim es > Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high tem perature reliability


    OCR Scan     		SSD2003 SSD2003 widths300ms, 945 mosfet n mosfet n channel k 946 250M PDF

    mosfet ssd

    Abstract: RG602
    Text: SSD2002 N&P-CHANNEL POWER MOSFET FEATURES • Lower Rds on ■ Improved Inductive Ruggedness ■ Fast Switching Times Gì ¡ j T ~~7~l Di ■ Lower Input Capacitance S2 [ X T I D? ■ Extended Safe Operating Area ■ Improved High Temperature Reliability


    OCR Scan     		SSD2002 mosfet ssd RG602 PDF

    SSD2005

    Abstract: SSD2006
    Text: DUAL P-CHANNEL POWER MOSFET SSD2005 FEATURES • Extremely Lower R d s <o n • Improved Inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		SSD2005 SSD2005 SSD2006 PDF