Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SSD20 Search Results

    SF Impression Pixel

    SSD20 Price and Stock

    Vishay Sfernice RSSD20117A47R0JB15

    ADJ PWR RES 47 OHM 100W CHAS MT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RSSD20117A47R0JB15 Bulk 14 1
    • 1 $69.71
    • 10 $69.71
    • 100 $41.754
    • 1000 $41.754
    • 10000 $41.754
    		Buy Now

    Vishay Sfernice RSSD20117A1R00KB15

    ADJ PWR RES 1 OHM 100W CHAS MT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RSSD20117A1R00KB15 Box 13 1
    • 1 $58.78
    • 10 $58.78
    • 100 $58.78
    • 1000 $58.78
    • 10000 $58.78
    		Buy Now

    Vishay Sfernice RSSD20117A10R0JB15

    ADJ PWR RES 10 OHM 100W CHAS MT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RSSD20117A10R0JB15 Bulk 9 1
    • 1 $59.04
    • 10 $59.04
    • 100 $59.04
    • 1000 $59.04
    • 10000 $59.04
    		Buy Now

    Vishay Sfernice RSSD20117A22R0JB15

    ADJ PWR RES 22 OHM 100W CHAS MT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RSSD20117A22R0JB15 Bulk 4 1
    • 1 $59.04
    • 10 $59.04
    • 100 $59.04
    • 1000 $59.04
    • 10000 $59.04
    		Buy Now

    Vishay Sfernice RSSD20117A4R70KB15

    ADJ PWR RES 4.7 OHM 100W CHAS MT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RSSD20117A4R70KB15 Bulk 1 1
    • 1 $70.41
    • 10 $46.046
    • 100 $70.41
    • 1000 $70.41
    • 10000 $70.41
    		Buy Now
    Find more SSD20 price and stock on Findchips.com

    SSD20 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSD20 Cooper Bussmann 20A:240V:HRC Fuse Original PDF
    SSD2003 Samsung Electronics Dual N-Channel Power MOSFET Scan PDF
    SSD2005 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSD2007 Fairchild Semiconductor Dual N-CHANNEL POWER MOSFET Original PDF
    SSD2007 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSD2007A Fairchild Semiconductor Dual N-Channel Power MOSFET Original PDF
    SSD2007ASTF Fairchild Semiconductor 50V N-Channel Dual Power MOSFET Original PDF
    SSD2007ATF Fairchild Semiconductor 50V N-Channel Dual Power MOSFET Original PDF
    SSD2008A Fairchild Semiconductor 30V N/P Dual Power MOSFET Original PDF
    SSD2009 Fairchild Semiconductor Dual N-CHANNEL POWER MOSFET Original PDF
    SSD2009A Fairchild Semiconductor Dual N-Channel Power MOSFET Original PDF
    SSD2009ATF Fairchild Semiconductor 50V N-Channel Dual Power MOSFET Original PDF
    SSD2011A Fairchild Semiconductor Dual P-Channel Power MOSFET Original PDF
    SSD2011ATF Fairchild Semiconductor 60V P-Channel Dual Power MOSFET Original PDF
    SSD2019A Fairchild Semiconductor 20V P-Channel Dual Power MOSFET Original PDF
    SSD2019A Fairchild Semiconductor Dual P-CHANNEL POWER MOSFET Original PDF
    SSD2021 Fairchild Semiconductor 30V N-Channel Dual Power MOSFET Original PDF
    SSD2021 Fairchild Semiconductor Dual N-CHANNEL POWER MOSFET Original PDF
    SSD2025 Fairchild Semiconductor Dual N-CHANNEL POWER MOSFET Original PDF
    SSD2025 Fairchild Semiconductor Dual N-Channel Power MOSFET Original PDF

    SSD20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SSD20P03 P-Ch Enhancement Mode Power MOSFET -20 A, -30 V, RDS ON 36 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD20P03 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate


    Original     		PDF SSD20P03 SSD20P03 O-252 300us, 01-June-2002

    SSD20P03-60

    Abstract: MosFET dpack power mosfet
    Text: SSD20P03-60 P-Ch Enhancement Mode Power MOSFET 24A, -30V, RDS ON 59mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.


    Original     		PDF SSD20P03-60 O-252 18-May-2010 SSD20P03-60 MosFET dpack power mosfet

    SSD20N20-125D

    Abstract: MosFET MOSFET N-CH 200V
    Text: SSD20N20-125D 12A , 200V , RDS ON 260mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)


    Original     		PDF SSD20N20-125D O-252 O-252 13-Sep-2013 SSD20N20-125D MosFET MOSFET N-CH 200V

    SSD20P15-295D

    Abstract: MosFET
    Text: SSD20P15-295D -10.7A, -150V, RDS ON 295mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process.Low RDS(on) assures minimal power loss


    Original     		PDF SSD20P15-295D -150V, O-252 10-Sep-2013 SSD20P15-295D MosFET

    Untitled

    Abstract: No abstract text available
    Text: SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 20A TO-252 RDS(ON) (mΩ) Max D 30 @VGS = 10V G 55 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ TO-252 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original     		PDF SSD2030N O-252 O-252

    SSD2008

    Abstract: SSD2008A
    Text: SSD2008A !"#$ !"#$%&'!! *#+,(-*.+/0(1 FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 • Lower RDS(ON) S2 3 6 D2 ■ Improved Inductive Ruggedness ■ Fast Swtching Times G2 4 5 D2 ■ Low Input Capacitance ■ Extended Safe Operating Area D1 D1 Top View S2 ■ Improved High Temperature Reliability


    Original     		PDF SSD2008A SSD2008 SSD2008 SSD2008A

    SSD20P06-135D

    Abstract: MosFET 135D
    Text: SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS ON 135mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat


    Original     		PDF SSD20P06-135D O-252 25-Aug-2010 SSD20P06-135D MosFET 135D

    SSD2007A

    Abstract: ISS106
    Text: SSD2007A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOP ‰ Extremely Lower RDS ON ‰ Improved Inductive Ruggedness ‰ Fast Switching Times S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View ‰ Rugged Polysilicon Gate Cell Structure ‰ Low Input Capacitance D1,D2


    Original     		PDF SSD2007A SSD2007A ISS106

    MOSFET g15

    Abstract: SSD2019A
    Text: SSD2019A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1 D2 ! Improved High Temperature Reliability


    Original     		PDF SSD2019A MOSFET g15 SSD2019A

    MOSFET 7121

    Abstract: PN channel MOSFET 10A SSD2025
    Text: SSD2025 Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS on S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1,D2 D1,D2 ! Improved High Temperature Reliability


    Original     		PDF SSD2025 MOSFET 7121 PN channel MOSFET 10A SSD2025

    transistor ssd2008

    Abstract: SSD2008 SSD2008A Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v
    Text: SSD2008A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 ! Low Input Capacitance ! Extended Safe Operating Area D1 D1 Top View D2 D2 ! Improved High Temperature Reliability


    Original     		PDF SSD2008A SSD2008 transistor ssd2008 SSD2008 SSD2008A Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v

    Untitled

    Abstract: No abstract text available
    Text: SSD2025 Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS on S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1,D2 D1,D2 ! Improved High Temperature Reliability


    Original     		PDF SSD2025 SSD2025 -SD2025TF

    Untitled

    Abstract: No abstract text available
    Text: SSD2011A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1 D2 ! Improved High Temperature Reliability


    Original     		PDF SSD2011A SSD2011A 12011ATF

    Untitled

    Abstract: No abstract text available
    Text: SSD2009A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC n Lower RDS ON n Improved Inductive Ruggedness n Fast Swtching Times S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View n Low Input Capacitance n Extended Safe Operating Area D1 D1 n Improved High Temperature Reliability


    Original     		PDF SSD2009A SSD2009

    12a36

    Abstract: No abstract text available
    Text: SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS ON 255mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.


    Original     		PDF SSD20N15-250D O-252 22-Jul-2010 12a36

    Untitled

    Abstract: No abstract text available
    Text: SSD2030P P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TO-252 RDS(ON) (mΩ) Max D 40 @VGS = - 10V -30V G 65 @VGS = - 5V -20A S D 75 @VGS = - 4.5V FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G TO-252 package.


    Original     		PDF SSD2030P O-252 O-252

    Untitled

    Abstract: No abstract text available
    Text: SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS ON 135mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat


    Original     		PDF SSD20P06-135D O-252 16-Aug-2010

    Untitled

    Abstract: No abstract text available
    Text: DUAL P-CHANNEL POWER MOSFETS SSD2015 FEATURES • Lower R ds<on • Improved inductive ruggedness • Fast switching times • Rugged polysiitcon gate ceil structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSD2015 300/iS, D05TS13

    SSD2005

    Abstract: P-CHANNEL POWER MOSFET
    Text: SSD2005 Dual P-CHANNEL POWER MOSFET FEATURES 8SOIC • Lower Rds on ■ improved Inductive Ruggedness Si ■ Fast Switching Times gi q t ■ Lower Input Capacitance ■ Extended Safe Operating Area ■ Improved High Temperature Reliability [T o S2 ~8~l Pi


    OCR Scan     		PDF SSD2005 SSD2005 P-CHANNEL POWER MOSFET

    c550c

    Abstract: mosfet 751
    Text: SSD2004 N&P-CHANNEL POWER MOSFET FEATURES 8 SOIC • Lower Rds on ■ Improved Inductive Ruggedness si [ T ~BlD i ■ Fast Switching Times Gì [ j T ~ n 01 ■ Lower Input Capacitance Si [ X ~6~l Dì Gj [ T H jD i ■ Extended Safe Operating Area ■ Improved High Temperature Reliability


    OCR Scan     		PDF SSD2004 SSD2004 00A/ns c550c mosfet 751

    SSD2009

    Abstract: TP150 2TS01
    Text: DUAL N-CHANNEL POWER MOSFETS SSD2009 FEATURES • • • • • • • 8SO IC Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF SSD2009 SSD2009 TP150 2TS01

    SSD2004

    Abstract: 250M
    Text: N&P-CHANNEL POWER MOSFETS SSD2004 FEATURES • Extremely Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSD2004 SSD2004 00A/iiS 300//s, 250M

    SSD2003

    Abstract: U2020 W749
    Text: SSD2003 Dual N-CHANNEL POWER MOSFET FE A T U R E S • Lower Rds on ■ Improved Inductive Ruggedness ■ Fast Switching Times ■ Lower Input Capacitance ■ Extended Safe Operating Area ■ Improved High Temperature Reliability Product Summary Part Number


    OCR Scan     		PDF SSD2003 SSD2003 00A/ns U2020 W749

    Untitled

    Abstract: No abstract text available
    Text: DUAL N-CHANNEL POWER MOSFETS SSD2013 FEATURES • • • • • • • 8SOIC Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSD2013 Cto150â