SS8050 SOT-23 Y1 Search Results

SS8050 SOT-23 Y1 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
7UL2T125FK		Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TC75S102F		Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
7UL2T126FK		Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TCR2EF18		Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR2LF18		Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)

SS8050 SOT-23 Y1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ss8050 sot-23 Abstract: SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8050 OT-23 SS8550 ss8050 sot-23 SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz	PDF
SS8050 Abstract: ss8050y1 Text: SS8050 NPN 3 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u SS8050 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued) Characteristics	Original	SS8050 OT-23 SS8050 80mAdc) ss8050y1	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz	PDF
ss8050 sot-23 Abstract: SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23 Text: SS8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	OT-23 SS8050 OT-23 SS8550 800mA 800mA, 30MHz 100mA ss8050 sot-23 SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23	PDF
SS8050 sot-23 Y1 Abstract: Y1 SOT-23 SS8050 Y1 ss8050 sot-23 SS8050 marking y1 sot-23 ss8050 equivalent marking Y1 transistor y1 SOT23 transistor marking y1 Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8050 Pb z Collector Current. IC= 1.5A） z Complementary To SS8550. z Collector dissipation:PC=300mW(TC=25℃ Lead-free APPLICATIONS z High Collector Current. SOT-23	Original	SS8050 SS8550. 300mW OT-23 BL/SSSTC086 SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 sot-23 SS8050 marking y1 sot-23 ss8050 equivalent marking Y1 transistor y1 SOT23 transistor marking y1	PDF
SS8050 Abstract: 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1 Text: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES      A L Complimentary to SS8550 Power Dissipation PCM : 0.3W Collector Current	Original	SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz 26-Oct-2009 SS8050 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1	PDF
Untitled Abstract: No abstract text available Text: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Power dissipation PCM : 0.3 W Collector Current ICM : 1.5 A Collector-base voltage V BR CBO : 40 V	Original	SS8050 OT-23 500mA 30MHz 01-June-2005	PDF
SS8050 Abstract: ss8050 sot-23 ss8050y1 MARKING JM Text: SS8050 NPN General Purpose Transistors SOT-23 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base voltage Emitter-Base VOItage Collector Current-Continuous S ym bol V a lu e V CEO VCBO 25 40 6 .0 1500 vebo ic Characteristics Total Device Dissipation FR-5 Board 1	OCR Scan	SS8050 OT-23 TA-25 SS8050 ss8050 sot-23 ss8050y1 MARKING JM	PDF