150v 1A schottky diode
Abstract: SS19 diode SS12 sma diode rectifier DO-214AC SS115 SS13 SS15 diode ss13
Text: SS1x Series Features: • • • • • • • • • For surface mounted application. Easy pick and place. Metal to silicon rectifier, majority carrier conduction. Low power loss, high efficiency. High current capability, low VF. High surge current capability.
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SMA/DO-214AC
SMA/DO-214AC
RS-481.
150v 1A schottky diode
SS19
diode SS12 sma
diode rectifier DO-214AC
SS115
SS13
SS15
diode ss13
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SS14 DIODE schottky
Abstract: diode marking ss14 SS14 DIODE DC SS14 diode SS14 application notes DIODE ss14 SMA CASE 403D-02 footprint DIODE marking code SS14 diode SS12 sma Theta-JC, 403D-02
Text: SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS12/D
SS14 DIODE schottky
diode marking ss14
SS14 DIODE
DC SS14 diode
SS14 application notes
DIODE ss14
SMA CASE 403D-02 footprint
DIODE marking code SS14
diode SS12 sma
Theta-JC, 403D-02
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ACE-Q101
Abstract: SS15-SS16 SS115
Text: SS12 - SS115 CREAT BY ART 1.0AMP Surface Mount Schottky Barrier Rectifier SMA/DO-214AC Pb RoHS COMPLIANCE Features UL Recognized File # E-326243 For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction
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SS115
SMA/DO-214AC
E-326243
ACE-Q101
SS15-SS16
SS12-SS14
SS19-SS110
SS15-SS16
SS115
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Untitled
Abstract: No abstract text available
Text: PWM +85°C DOUBLE METALLIZED AXIAL LEAD POLYPROPYLENE FILM CAPACITORS • For Pulse/Snubber Applications FEATURES • • • • • • Extremely Long 30,000 Hours Operating Life dV/dt Range Up to 750 VIp. Sec. Self Healing High Voltage LowESR High Current Carrying Capabilities (to 6 Amps. rms)
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850WVDC
684PWM122K
10SPWM8SOK
105PWM122K
15SPWM85OK
155PWM122K
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Untitled
Abstract: No abstract text available
Text: SS12 thru SS115 Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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SS115
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
AEC-Q101
JESD22-B102
D1309022
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SS16MHRSG
Abstract: No abstract text available
Text: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020
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SS13M
SS16M
J-STD-020
2011/65/EU
2002/96/EC
AEC-Q101
JESD22-B102
D1406008
SS16MHRSG
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Untitled
Abstract: No abstract text available
Text: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level 1, per J-STD-020
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PDF
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SS13M
SS16M
J-STD-020
2011/65/EU
2002/96/EC
JESD22-B102
D1308025
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Untitled
Abstract: No abstract text available
Text: SS12 thru SS115 Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity: level 1, per J-STD-020
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PDF
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SS115
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
AEC-Q101
JESD22-B
D1309022
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Untitled
Abstract: No abstract text available
Text: SS13M thru SS16M Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and
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SS13M
SS16M
J-STD-020
2011/65/EU
2002/96/EC
AEC-Q101
JESD22-B102
D1308025
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Untitled
Abstract: No abstract text available
Text: SS12 thru SS115 Taiwan Semiconductor CREAT BY ART Surface Mount Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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PDF
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SS115
J-STD-020
2011/65/EU
2002/96/EC
DO-214AC
AEC-Q101
JESD22-B102
D1309022
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SS14 DIODE schottky
Abstract: DIODE ss14 SS14 DC DC SS14 diode 403D SS12T3 SS12T3G SS14 SS14T3 SS14T3G
Text: SS12, SS14 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS12/D
SS14 DIODE schottky
DIODE ss14
SS14 DC
DC SS14 diode
403D
SS12T3
SS12T3G
SS14
SS14T3
SS14T3G
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Untitled
Abstract: No abstract text available
Text: SS12L thru SS115L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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SS12L
SS115L
J-STD-020
2011/65/EU
2002/96/EC
AEC-Q101
JESD22-B102
D1308028
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Untitled
Abstract: No abstract text available
Text: SS12 - SS115 CREAT BY ART 1.0AMP Surface Mount Schottky Barrier Rectifier SMA/DO-214AC Features For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF
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SMA/DO-214AC
SS115
J-STD-020D,
260/10s
SMA/DO-214AC
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Untitled
Abstract: No abstract text available
Text: SS12 – S100 WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage Application
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SMA/DO-214AC
SMA/DO-214AC,
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ss12
Abstract: No abstract text available
Text: SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 30A Peak
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SMA/DO-214AC,
MIL-STD-750,
ss12
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Untitled
Abstract: No abstract text available
Text: SS12 - SS115 CREAT BY ART 1.0AMP Surface Mount Schottky Barrier Rectifier SMA/DO-214AC Pb RoHS COMPLIANCE Features For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency
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SMA/DO-214AC
SS115
AEC-Q101
SMA/DO-214AC
SS12-SS14
SS15-SS115
SS15-SS16
SS12-SS14
SS19-SS110
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Untitled
Abstract: No abstract text available
Text: SS12L thru SS115L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020
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PDF
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SS12L
SS115L
J-STD-020
2011/65/EU
2002/96/EC
JESD22-B102
D1308028
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Untitled
Abstract: No abstract text available
Text: SS12L thru SS115L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity: level 1, per J-STD-020
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Original
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PDF
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SS12L
SS115L
J-STD-020
2011/65/EU
2002/96/EC
AEC-Q101
JESD22-B102
D1308028
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Untitled
Abstract: No abstract text available
Text: SS12L thru SS115L Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020
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Original
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PDF
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SS12L
SS115L
J-STD-020
2011/65/EU
2002/96/EC
AEC-Q101
JESD22-B102
D1308028
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Untitled
Abstract: No abstract text available
Text: INTERCONNECT STRIPS M ates w ith : SS, SD, HSS, SL, SDL, ESS, ESD LBS SPECIFICATIONS B 1 LBS SERIES LEAD STYLE NO. PINS PER ROW For complete specifications see www.samtec.com?LBS Insulator Material: Black High Temperature Thermoplastic Flammability Rating:
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0X013030
7526S00
2-26904858-F
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FZH 191
Abstract: SRF 3733 lzl 24h fzh 111 SRF 7068 TYA 0298 FZH 161 LOGIC CIRCUIT FZH 165 FZH 261 FZH 171
Text: r M O S I M Ä 0 S& M O S In tegrated C ircu it « PLL •a > ^q- 1 7 6 8 t IDC PLL > >-tz+f-< + f £ r t / & V' • - 7 1 ? azi > h a - ÿ V T o 4 t'7 h • C P U « , 4 t í -y h M5iJAfli:, f f i l f t * . « » ( B t T - y b • T Z b. * -V U - • 7 7 ^ t 7
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PD17068
FZH 191
SRF 3733
lzl 24h
fzh 111
SRF 7068
TYA 0298
FZH 161
LOGIC CIRCUIT FZH 165
FZH 261
FZH 171
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Untitled
Abstract: No abstract text available
Text: rv, Lfv Mates w ith: TS, TD. HTS, BBS, BBD, BBL, BDL, BHS, §L TYPE STRIP NO. PINS PER ROW In PLATING OPTION W LEAD ^ STYLE W OPTION H W OTHER OPTION Specifications: SS’ SD s w Insulator Material: Black Glass Filled Polyester G 30LL" 0,76pm Gold contact
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OCR Scan
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PDF
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SS-1XX-X-29
1-800-SAMTEC-9
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Untitled
Abstract: No abstract text available
Text: F-205 SUPPLEMENT INTERCONNECT STRIPS Mates with: SS, SD, HSS, SL, SDL, ESS, ESD 1 | NO. PINS 1 | PER ROW LBS LBS SERIES LEAD STYLE SP E C IF IC A T IO N S For complete specifications see www.samtec.com?LBS Insulator Material: Black High Temperature Thermoplastic
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F-205
1000VRMS
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1-800-SAMTEC-9
Abstract: ht-10-sc ncl 052
Text: Mates w ith: TS, TD. HTS, BBS, BBD, BBL, BDL, BHS, TYPE STRIP PLATING OPTION NO. PINS PER ROW LEAD STYLE OPTION f f M OTHER OPTION C l Specifications: -N S S ’ SD s w In su lator M aterial: = Non Flush 30LL" 0,76pm G Black Glass Filled P olyester O p erating Te m p Range:
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7cJb414ci
1-800-SAMTEC-9
ht-10-sc
ncl 052
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