145AA
Abstract: FIT4 8361H CY7C1399 CY7C199 JESD22
Text: Cypress Semiconductor Qualification Report QTP# 97202 VERSION 1.0 November, 1997 32K x 8 SRAM, R32 Technology, Fab 4 Qualification CY7C199 32K x 8 SRAM 5V Operation CY7C1399 32K x 8 SRAM (3.3V Operation) Cypress Semiconductor, Inc. 32K x 8 SRAM - R32D Technology
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CY7C199
CY7C1399
CY7C199/CY7C1399
28-pin,
300-mil
048-SC
30C/60
CY7C1049-VC
145AA
FIT4
8361H
CY7C1399
CY7C199
JESD22
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PDF
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CY62256-SNC
Abstract: CY62256 CY62256V JESD22
Text: Qualification Report February 1997 QTP# 97063, Version 1.0 32K x 8 Low Power SRAM - R32 Technology Part Number Description CY62256 32K x 8 SRAM Low Power 5V Operation CY62256V 32K x 8 SRAM Low Power (3V Operation) PRODUCT DESCRIPTION (for qualification)
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CY62256
CY62256V
CY62256,
CY62256V,
28-pin,
300-mil
85C/85
CY62256-VC
CY62256-SNC
CY62256
CY62256V
JESD22
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PDF
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CY62256
Abstract: CY62256V CY62256-VC
Text: Cypress Semiconductor Qualification Report QTP# 97132 VERSION 1.0 April, 1997 32K x 8 Low Power SRAM - R32 Technology - Fab4 Qualification Part Number Description CY62256 32K x 8 SRAM Low Power 5V Operation CY62256V 32K x 8 SRAM Low Power (3V Operation)
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CY62256
CY62256V
CY62256/CY62256V
CY62256,
CY62256V,
28-pin,
300-mil
85C/85
CY62256V-VC
CY62256
CY62256V
CY62256-VC
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PDF
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SOJ 44
Abstract: 84-1MISR4 CY7C1020 CY7C1020V33 EME-6300 JESD22 ASE Cypress Qualification
Text: Cypress Semiconductor Qualification Report QTP# 97044, VERSION 1.0 July, 1997 32K x 16 SRAM, R3 Technology, Fab 4 Qualification CY7C1020 CY7C1020V33 32K x 16, 5V Static RAM 32K x 16, 3.3V Static RAM Cypress Semiconductor 32K x 16 SRAM, R3 Technology, Fab 4
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Original
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CY7C1020
CY7C1020V33
CY7C1020/CY7C1020V33
44-pin,
CY7C1020-VC
30C/60
SOJ 44
84-1MISR4
CY7C1020
CY7C1020V33
EME-6300
JESD22
ASE Cypress Qualification
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PDF
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Mil-Std-883 Wire Bond Pull Method 2011
Abstract: 28-pin SOJ SRAM 9749 cel 9200 8361H CY62256V JESD22
Text: Cypress Semiconductor Qualification Report QTP# 97496, VERSION 1.1 March 1999 256K SRAM, R42 Technology, Fab 4 Qualification CY62256V* 32K x 8 Micro Power Asynchronous SRAM 2.7V - 3.6V CY62256V25* 32K x 8 Micro Power Asynchronous SRAM (2.3V - 2.7V) CY62256V18*
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Original
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CY62256V*
CY62256V25*
CY62256V18*
CY62256V
28-pin,
300-mil
CY622=
85C/85
CY62256V-VC
Mil-Std-883 Wire Bond Pull Method 2011
28-pin SOJ SRAM
9749
cel 9200
8361H
CY62256V
JESD22
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PDF
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GVT7232A8
Abstract: GALVANTECH
Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7232A8 TRADITIONAL PINOUT 32K X 8 SRAM 32K x 8 SRAM +5V SUPPLY, SINGLE CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTION • • • The GVT7232A8 is organized as a 32,768 x 8 SRAM using a four-transistor memory cell with a high performance,
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GVT7232A8
GVT7232A8
7232A8
GALVANTECH
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PDF
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DQY32
Abstract: No abstract text available
Text: ADVANCE INFORMATION GVT8132P36 32K X 36 PIPELINED SRAM GALVANTECH, INC. DUAL I/O DUAL ADDRESS SYNCHRONOUS SRAM 32K X 36 SRAM +3.3V SUPPLY, FULLY REGISTERED TWO BI-DIRECTIONAL DATA BUSES FEATURES GENERAL DESCRIPTION • • • • • • • The GVT8132P36 SRAM integrates 32,768 x 36 SRAM
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GVT8132P36
GVT8132P36
8132P36
access/10
access/12
DQY32
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PDF
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GVT7132D32
Abstract: 7132D32
Text: GALVANTECH, GVT7132D32 32K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 32K x 32 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTIO N • • • • • The Galvantech Synchronous Burst SRAM family
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GVT7132D32
GVT7132D32
32768x32
synchronVT7132D32
7132D32
access/10ns
access/12ns
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PDF
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GVT7132C32
Abstract: marking A00 GVT7132C32Q-4
Text: GALVANTECH, INC. GVT7132C32 32K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 32K x 32 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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Original
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GVT7132C32
GVT7132C32
32768x32
marking A00
GVT7132C32Q-4
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PDF
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GVT7132D32
Abstract: "32K x 32" SRAM marking a11
Text: GALVANTECH, INC. GVT7132D32 32K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 32K x 32 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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Original
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GVT7132D32
GVT7132D32
32768x32
7132D32
access/10ns
access/13ns
access/15ns
"32K x 32" SRAM
marking a11
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PDF
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GVT7232A8
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT7232A8 TRADITIONAL PINOUT 32K X 8 SRAM ASYNCHRONOUS SRAM 32K x 8 SRAM +5V SUPPLY, SINGLE CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • The GVT7232A8 is organized as a 32,768 x 8 SRAM using a four-transistor memory cell with a high performance,
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Original
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GVT7232A8
GVT7232A8
7232A8
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PDF
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GALVANTECH
Abstract: GVT7132B36 DQ25d
Text: GALVANTECH, INC. GVT7132B36 32K X 36 SYNCHRONOUS BURST SRAM 32K x 36 SRAM SYNCHRONOUS BURST SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Galvantech Synchronous Burst SRAM family
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Original
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GVT7132B36
GVT7132B36
32768x36
7132B36
access/15ns
access/20ns
GALVANTECH
DQ25d
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PDF
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A12L
Abstract: IDT70V7278
Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. PRELIMINARY IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 8K x 16 banks
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Original
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IDT70V7278S/L
16-bit
x1DT70V7278S/L
100-pin
PN100-1)
70V7278
512Kbit
A12L
IDT70V7278
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PDF
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DRAM 256 X 1, 18 PDIP
Abstract: 64K X 4 SRAM mmui
Text: A Contents Fast SRAM Low Voltage Fast SRAM Short Form 1995 AS7C164 8K x 8 3 AS7C256 32K x 8 4 AS7C259 32K x 9 5 AS7C512 64K x 8 6 AS7C1024 128K x 8 300/400 mil 7 AS7C1028 256K x 4 400 mil 8 AS7C3256 32K x 8 3.3V 9 AS7C3512 64K x 8 3.3V 10 AS7C31024 128K x 8
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OCR Scan
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AS7C164
AS7C256
AS7C259
AS7C512
AS7C1024
AS7C1028
AS7C3256
AS7C3512
AS7C31024
AS7C33232
DRAM 256 X 1, 18 PDIP
64K X 4 SRAM
mmui
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PDF
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M48Z30
Abstract: M48Z30Y
Text: M48Z30 M48Z30Y CMOS 32K x 8 ZEROPOWER SRAM INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS of DATA RETENTION in the ABSENCE of POWER PIN and FUNCTION COMPATIBLE with JEDEC STANDARD 32K x 8 SRAMs
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Original
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M48Z30
M48Z30Y
M48Z30:
M48Z30Y:
PMDIP28
M48Z30/30Y
M48Z30
M48Z30Y
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PDF
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A12L
Abstract: IDT70V7278 register with truth table
Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Integrated Device Technology, Inc. ADVANCED IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks
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Original
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IDT70V7278S/L
16-bit
IDT70V7278
100-pin
PN100-1)
70V7278
A12L
IDT70V7278
register with truth table
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PDF
|
Untitled
Abstract: No abstract text available
Text: I dt Integrated Device Technology, Inc. HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks
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OCR Scan
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IDT707278S/L
16-bit
IDT707278
IDT707278
IDT707278S/L
100-pin
PN100-1)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Integrated D e v ile Technology, li e . HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS PRELIMINARY IDT707278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture - Four independent 8K x 16 banks
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OCR Scan
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IDT707278S/L
16-bit
100-pin
PN100-1)
512Kbit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: |U |I C R O N 32K X M T58LC 32K 32/36D 8 32/36 S Y N C B U R S T SRAM 32K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • Fast access times: 4.5, 5, 6 and 7ns
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OCR Scan
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T58LC
32/36D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MT5C2568 883C 32K x 8 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 32K x 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • • • • • Ultra high speed 12, 15ns High speed: 20, 25, 35 and 45ns Battery backup: 2V data retention Low power standby
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Original
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MT5C2568
MIL-STD-883
28-PIN
D15/D10)
MIL-STD-883
DS000007
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE 32K SYNCHRONOUS SRAM X M T58LC 32K 36D 7 36 S Y N C B U R S T SRAM 32K x 36 SRAM +3.3V SUPPLY, PIPELINED, SINGLE CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES Fast access times: 4.5, 5, 6. 7 and 8ns Fast O E access tim es: 5 and 6ns Single +3.3V + 1 0 % /-5 % pow er supply
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OCR Scan
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T58LC
128ns.
MT5BLC32K36D7
|
PDF
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V727
Abstract: ce1111
Text: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS I dt Integrated Device Technology, Inc. PRELIMINARY IDT70V7278S/L FEATURES: DESCRIPTION: • 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture — Four independent 8K x 16 banks
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OCR Scan
|
IDT70V7278S/L
16-bit
IDT70V7278
100-pin
PN100-1
70V7278
512Kbit
V727
ce1111
|
PDF
|
58LC32K
Abstract: 58Lc32
Text: JÚl ft 8 19« ADVANCE MT58LC32K36C4 32K X 36 SYNCHRONOUS SRAM MICRON • SCMlCONOlATTOa MC SYNCHRONOUS SRAM 32K x 36 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • • • • • • •
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OCR Scan
|
MT58LC32K36C4
486/Pentiumâ
MT58LC32K36C4LG-10
64-bit
MT58LC32K36C4LG-7
ITTMLC32K36C4
C1993.
58LC32K
58Lc32
|
PDF
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MTSC2568
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC S5E D blllSH T 0003145t, TOT IMRN MT5C2568 32K X 8 SRAM [MICRON H < o -V b -\ 7 > SRAM 32K X 8 SRAM • High speed: 10*, 12*, 15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply
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OCR Scan
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0003145t,
MT5C2568
28-Pin
27Mteron
DQG34b3
MTSC2568
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PDF
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