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    SRAM 2K X 8 Search Results

    SRAM 2K X 8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - SRAM Visit Rochester Electronics LLC Buy
    27S03ALM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy

    SRAM 2K X 8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOP24

    Abstract: PDIP28 U631H16 a9235
    Text: Obsolete - Not Recommended for New Designs U631H16 SimtekSoftStore 2K x 8 nvSRAM Features Description • The U631H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile


    Original     		PDF U631H16 U631H16 PDIP28 300mil) SOP24 PDIP28 a9235

    M48Z02

    Abstract: M48Z12 MK48Z02
    Text: M48Z02 M48Z12 CMOS 2K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATICPOWER-FAIL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT


    Original     		PDF M48Z02 M48Z12 M48Z02: M48Z12: M48Z02 MK48Z02 600mil M48Z12

    PCDIP24

    Abstract: DS1220 M48Z02 M48Z12 M48Z02 Zeropower
    Text: M48Z02 M48Z12 16Kb 2K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES


    Original     		PDF M48Z02 M48Z12 M48Z02: M48Z12: PCDIP24 M48Z02/12 DS1220. 600mil M48Z0ce. PCDIP24 DS1220 M48Z02 M48Z12 M48Z02 Zeropower

    PDIP24

    Abstract: U635H16 A-9215
    Text: Obsolete - Not Recommended for New Designs U635H16 PowerStore 2K x 8 nvSRAM Features Description • The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile


    Original     		PDF U635H16 U635H16 PDIP24 A-9215

    PDIP24

    Abstract: U635H16 ZMD AG
    Text: U635H16 PowerStore 2K x 8 nvSRAM Features Description ! High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


    Original     		PDF U635H16 U635H16 D-01109 D-01101 PDIP24 ZMD AG

    PCDIP24

    Abstract: M48Z02 Zeropower DS1220 M48Z02 M48Z12
    Text: M48Z02 M48Z12 16Kb 2K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES


    Original     		PDF M48Z02 M48Z12 M48Z02: M48Z12: PCDIP24 M48Z02/12 DS1220. 600mil M48Z02 M48Z12 PCDIP24 M48Z02 Zeropower DS1220

    PDIP28

    Abstract: U630H16 ZMD AG
    Text: U630H16 HardStore 2K x 8 nvSRAM Features Description ! High-performance CMOS nonvo- The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In


    Original     		PDF U630H16 U630H16 D-01109 D-01101 PDIP28 ZMD AG

    PDIP24

    Abstract: U63716 ZMD AG
    Text: Preliminary U63716 CapStore 2K x 8 nvSRAM Features Description ! CMOS non- volatile static RAM The U63716 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In non-volatile operation, data is transferred in


    Original     		PDF U63716 U63716 D-01109 D-01101 PDIP24 ZMD AG

    PLCC32

    Abstract: U630H16 U630H16PA35 GR47 all stk ic diagram
    Text: U630H16PA35 HardStore 2K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In


    Original     		PDF U630H16PA35 to125 M3015 PLCC32 U630H16 U630H16 PLCC32 U630H16PA35 GR47 all stk ic diagram

    PDIP24

    Abstract: U63716 U63716DK u63716dk70
    Text: Obsolete - Not Recommended for New Designs U63716 CapStore 2K x 8 nvSRAM Features Description • The U63716 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In non-volatile operation, data is transferred in


    Original     		PDF U63716 U63716 PDIP24 U63716DK u63716dk70

    PDIP28

    Abstract: U630H16 GR47 NECO STK 480
    Text: Obsolete - Not Recommended for New Designs U630H16 HardStore 2K x 8 nvSRAM Features Description • The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In


    Original     		PDF U630H16 U630H16 PDIP28 GR47 NECO STK 480

    all stk ic diagram

    Abstract: IC NE 555 stk all ic data stk 2048 PLCC32 U630H16 U630H16P U630H16PA35 U631H16 Stk Ic Data Software
    Text: Obsolete - Not Recommended for New Designs U630H16P HardStore 2K x 8 nvSRAM Features Description • The U630H16P has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In


    Original     		PDF U630H16P U630H16P U630H16PA35 U630H16 U631H16) all stk ic diagram IC NE 555 stk all ic data stk 2048 PLCC32 U630H16 U631H16 Stk Ic Data Software

    U630H16

    Abstract: U630H16XS W2565 2ETA
    Text: Obsolete - Not Recommended for New Designs U630H16XS HardStore 2K x 8 nvSRAM Die Features Description • The U630H16 has two separate modes of operation: SRAM mode and non-volatile mode, determined by the state of the NE pad. In SRAM mode, the memory operates as an ordinary static RAM. In


    Original     		PDF U630H16XS U630H16 U630H16XS W2565 2ETA

    CQFP68

    Abstract: 95051 5962-8861011UA QP7133 QP7133SA
    Text: QP7133SA QP7133LA DS QP7133.doc QP7133SA & QP7133LA High-Speed 2K x 16 Dual-Port Static RAM General Description The QP7133SA/LA are CMOS Fast 2K x 16 Dual-Port Static RAMs SRAM . QP Semiconductor designed the QP7133SA/LA to be direct replacements for the IDT7133SA/LA. They are designed to be used as stand-alone DualPort RAMs in 16 bit applications.


    Original     		PDF QP7133SA QP7133LA QP7133 QP7133SA QP7133LA QP7133SA/LA IDT7133SA/LA. IDT7133SA/IDT7133LA. CQFP68 95051 5962-8861011UA

    BA5L

    Abstract: 70V7599 IDT70V7599 IDT70V7599S R4B15
    Text: HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PRELIMINARY IDT70V7599S Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ 128K x 36 Synchronous Bank-Switchable Dual-ported SRAM Architecture – 64 independent 2K x 36 banks


    Original     		PDF IDT70V7599S 166MHz 133MHz) 12Gbps SMEN-01-05 SMEN-01-04 BA5L 70V7599 IDT70V7599 IDT70V7599S R4B15

    MT5C1608

    Abstract: No abstract text available
    Text: M IC R O N 2K SRAM MT5C1608 X 8 SRAM 2K X 8 SRAM • High speed: 8*, 10,12,15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL compatible


    OCR Scan     		PDF MT5C1608 24-Pin

    52002HR

    Abstract: 52002I IN3064 2k x 8 nvram
    Text: 52002 2K BIT 256 x 8 NVRAM 2K Bit Static RAM backed by 2K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit EEPROM Changes SRAM Cycle Time less than 300 ns Power-Faiiure Protection Unlimited Recall Cycles Memory Margining Capability


    OCR Scan     		PDF 52002HR. 52002HR 52002I IN3064 2k x 8 nvram

    Untitled

    Abstract: No abstract text available
    Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;


    OCR Scan     		PDF MB8431/32-90/-90U-90LU-12/-12U-12LL 16K-BIT MB8431/32 MB8431 MB8432 DIP-52P-M01 MB8431) 374T7Sb

    B8432

    Abstract: sram 2k x 8 MB8432
    Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;


    OCR Scan     		PDF MB8431/32-90/-90U-90LU-12/-12U-12LL 16K-BIT MB8431/32 MB8431 MB8432 B8432 sram 2k x 8

    pv41

    Abstract: No abstract text available
    Text: PRELIMINARY IDT7MPV4160 IDT7MPV4161 IDT7MPV4162 IDT7MPV4162A IDT7MPV4163 64K/1 28K/256K/51 2K x 36 SYNCHRONOUS SRAM MODULE FAMILY FEATURES: DESCRIPTION: • Pin compatible flow-through synchronous SRAM module family • 144 position SO-DIMM Connector, - Berg part number: 61178


    OCR Scan     		PDF 64K/1 28K/256K/51 IDT7MPV4160 IDT7MPV4161 IDT7MPV4162 IDT7MPV4162A IDT7MPV4163 IDT7MPV416 PV4162A PV4163 pv41

    6264 SRAM

    Abstract: SRAM 6264
    Text: UALON MICROELECTRONICS 2ME D HM6116 2K X 8 SRAM m M S T a o m DQJOOSB a T~ ‘•Rp ~3.3-l3~. H M 6264/L 8K 8 SRAM X M Features Features * High speed - 70/100/120 ns MAX. * Low Power dissipation: 250mW ( Ty p .) Operating. 5 /tW ( Ty p .) Standby. * Single 5V power supply.


    OCR Scan     		PDF HM6116 6264/L 250mW HM6264: 300mW 100/tW HM6264/L: 275mW 50/tW 6264 SRAM SRAM 6264

    Untitled

    Abstract: No abstract text available
    Text: /T T SGS-THOMSON M48T02 A 7 # . [M»[g[LI gmMD(gS_ M48T12 16Kb (2K x 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK and POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE,


    OCR Scan     		PDF M48T02 M48T12 M48T02: M48T12: PCDIP24 1N5817 MBRS120T3 M48T02,

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N 2K SRAM 2K X M T 5C 1608 X 8 SRAM 8 SRAM • H ig h sp eed : 9 , 1 0 ,1 2 , 1 5 , 2 0 a n d 25ns • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m etal p ro cess • Sin g le + 5 V ± 1 0 % p o w er su p p ly • E asy m em o ry ex p a n sio n w ith C E an d O E optio n s


    OCR Scan     		PDF 24-Pin

    Untitled

    Abstract: No abstract text available
    Text: /T T SGS-THOMSON M48Z02 A 7 # . [M»[g[LI gmMD(gS_ M48Z12 16Kb (2K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES ■ READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ AUTOMATIC POWER-FAIL CHIP DESELECT and


    OCR Scan     		PDF M48Z02 M48Z12 M48Z02: M48Z12: M48Z02/12