FSR510
Abstract: 19v 4.74A package marking 220-6L 19V DC 90w 90w flyback 12V ENERGY LIGHT CIRCUIT DIAGRAM simple 12v to 19v converter FAN6300 JESD22-A114 FSR510R09GZ
Text: FSR510 Highly Integrated Synchronous Rectification Combination Controller for Quasi-Resonant PWM Controller Features Description Highly Integrated Synchronous Rectification SR Combination Controller, Combining MOSFET and SR Controller Built-In Ultra-Low RDS-ON MOSFET
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FSR510
FSR510
19v 4.74A
package marking 220-6L
19V DC 90w
90w flyback
12V ENERGY LIGHT CIRCUIT DIAGRAM
simple 12v to 19v converter
FAN6300
JESD22-A114
FSR510R09GZ
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FSR510
Abstract: 19v 4.74A 90w flyback 19V DC 90w 12V ENERGY LIGHT CIRCUIT DIAGRAM LPC TPM package marking 220-6L simple 12v to 19v converter FAN6300 JESD22-A114
Text: FSR510 Highly Integrated Synchronous Rectification Combination Controller for Quasi-Resonant PWM Controller Features Description Highly Integrated Synchronous Rectification SR Combination Controller, Combining MOSFET and SR Controller Built-In Ultra-Low RDS-ON MOSFET
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FSR510
FSR510
19v 4.74A
90w flyback
19V DC 90w
12V ENERGY LIGHT CIRCUIT DIAGRAM
LPC TPM
package marking 220-6L
simple 12v to 19v converter
FAN6300
JESD22-A114
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KNB1560
Abstract: IRF22N60K cp5 94v-0 4N7 CAPACITOR 1000V CP5 94V0 IRF22N60 hughes 200-203
Text: User Guide 1.0 IRAC11662-100W 123456789ABCD5EF5DBBB75 525 5 DF75 7C55 AD!A5"#BCD5 by HELEN DING, ISRAEL SERRANO 19 April 2010 Rev.1A 19 April 2010 UG #1.0 Page 1 of 24 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: 310 252-7105
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IRAC11662-100W
123456789ABCD5EF
M3X38;
SFH615A2
TEA1507
SFH615A-2
KNB1560
IRF22N60K
cp5 94v-0
4N7 CAPACITOR 1000V
CP5 94V0
IRF22N60
hughes 200-203
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mosfet D414
Abstract: TRANSISTOR D412 smd mosfet d413 d409 mosfet mosfet d408 TRANSISTOR D405 motorola D402 user guide D408 mosfet D405 mosfet 3 phase inverter schematic diagram
Text: Freescale Semiconductor, Inc. 3-Phase Switched Reluctance Low-Voltage Power Stage User’s Manual For More Information On This Product, Go to: www.freescale.com A G R E E M E N T Motorola Embedded Motion Control N O N - D I S C L O S U R E Freescale Semiconductor, Inc.
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12v to Amplifier 200w schematic diagrams
Abstract: 400w power amplifier circuit diagram L497x L4970A SR-2 AN487 l4970a application SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A BDC 5A transistor
Text: AN487 APPLICATION NOTE INTRODUCTION TO A 10A MONOLITHIC SWITCHING REGULATOR IN MULTIPOWER-BCD TECHNOLOGY by C. Diazzi The L497X series of high current switching regulator ICs exploit Multipower-BCD technology to achieve very high output currents with low power dissipation – up to 10A in the Multiwatt power package and
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AN487
L497X
12v to Amplifier 200w schematic diagrams
400w power amplifier circuit diagram
L4970A
SR-2
AN487
l4970a application
SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A
BDC 5A transistor
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Untitled
Abstract: No abstract text available
Text: Document Number: MC10XS3425 Rev. 2.0, 2/2014 Freescale Semiconductor Advance Information Quad High-side Switch Dual 10 mOhm, Dual 25 mOhm 10XS3425 The 10XS3425 is one in a family of devices designed for low-voltage automotive lighting applications. Its four low RDS(on) MOSFETs (dual
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MC10XS3425
10XS3425
10XS3425
16-bit
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TDC 310 NTC thermistor
Abstract: TDC 310 NTC TDC 210 NTC TDC 310 thermistor MAX17511 1/TDC 310 NTC thermistor GFX 2AA IMVP7 Ps3 MOTHERBOARD CIRCUIT diagram
Text: 19-5742; Rev 1; 7/11 TION KIT EVALUA BLE AVAILA Dual-Output, 3-/2-/1-Phase + 2-/1-Phase Quick-PWM Controllers for VR12/IMVP7 Features The MAX17411/MAX17511/MAX17511C/MAX17511N/ MAX17511T are dual-output, step-down, constant on-time Quick-PWMK controllers for VR12/IMVP-7 CPU core supplies. The controllers consist of two high-current switching
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VR12/IMVP7
MAX17411/MAX17511/MAX17511C/MAX17511N/
MAX17511T
VR12/IMVP-7
MAX17411
MAX17511/MAX17511C/MAX17511N/MAX17511T
MAX17411/MAX17511/
MAX17511C/MAX17511N/MAX17511T
TDC 310 NTC thermistor
TDC 310 NTC
TDC 210 NTC
TDC 310 thermistor
MAX17511
1/TDC 310 NTC thermistor
GFX 2AA
IMVP7
Ps3 MOTHERBOARD CIRCUIT diagram
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Current-doubler rectifier
Abstract: AN1245 ISL6742 Current-doubler resonant half bridge schematic AN1191
Text: iSim ISL6742 Virtual Evaluation Platform Application Note March 8, 2006 AN1245.0 Author: Fred Greenfeld Introduction Intersil’s iSim™ is an interactive, web-based tool for selecting and simulating products and their applications from Intersil’s broad portfolio. Currently, iSim™ is available for
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ISL6742
AN1245
FN9183.
Current-doubler rectifier
Current-doubler
resonant half bridge schematic
AN1191
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E80276
Abstract: No abstract text available
Text: MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE TM25RZ/EZ-24,-2H • IT AV • IF (AV) • VRRM • • • • Average on-state current . 25A Average forward current . 25A Repetitive peak reverse voltage
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TM25RZ/EZ-24
1200/1600V
E80276
E80271
E80276
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75176
Abstract: 75ALS175 LTC450 LT 485 t1127a LTI039 LT485
Text: INTERFACE 5V/3.3V Pow ered ¡- 1 Multiple Drivers/Receivers LTi 330 3Dx 5P*| LT1331 ¡3D« 5R«i Lrt542|JD*.5R» LTC1 348 (3D> 5* 3.3V Pow ered RS232 )- 1 Multiple Drivers/Receivers LTi 332 (3D. 5FL-) uses LT1109A LTC1348 ,50< SR« • 5V Powered IrC
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LT1331
rt542
RS232
LT1109A
LTC1348
RS232
LT1181A
LTi281A
LT1381
LTC1383
75176
75ALS175
LTC450
LT 485
t1127a
LTI039
LT485
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Untitled
Abstract: No abstract text available
Text: PD -5.05 5 In te rn a tio n a l K SR Rectifier PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-Fast Speed IGBT Features • Generation 4 IG B T technology V c E S = 600 V • UltraFast: Optim ized for high operating frequencies 8 -4 0 kH z in hard switching, >200
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GA100TS60U
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11H19
Abstract: B307
Text: 1DI75E-120 75a •’ Outline Drawings POWER TRANSISTOR MODULE : F e a tu re s • SW Œ High Voltage • 7 U —sjî'f K rtJR • A S O à 'lS l' • flêäüffi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type If fliÊ : A p p lic a tio n s
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1DI75E-120
11H19^
l95t/R89
11H19
B307
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954A
Abstract: westcode n 600 ch 14 westcode n 600 ch 12 INR 14D 12D100 WESTCODE
Text: - ^/iDi \a/f T rn w t aQiu u un cf \Th SEMICONDUCTORS T E C H N IC A L P U B L IC A T IO N D P55 ISSUE1 1 1080 Msrch, Stud-Base Silicon Rectifier Diodes Type PCN/PCRÛ55 75amperes average: up to 1600 volts Vr r m R A T IN G S Maximum values at 175*0 Tj unless stated otherwise
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PCN/PCR055
75arnperes
110cC
3929A3s
3S64A3
17BaC
954A
westcode n 600 ch 14
westcode n 600 ch 12
INR 14D
12D100
WESTCODE
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Tec h n o lo g y APT10M25BNFR APT10M30BNFR POWER MOS IVe 0.025a 100V 75A 100V 75A 0.030Í2 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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APT10M25BNFR
APT10M30BNFR
APT10M25/10M
30BNFR
APT10M25/10M30BNFR
O-247AD
GGD1411
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aiwa TV A141KE
Abstract: 2MBI75F-060 30S3 T151 SH 04.31
Text: 2MBI75F-060 75A tÉ ± ' < r7 ~ IGBT I # » 1* * : Outline Drawings IGBT MODULE I Features • te ts *n « /± • Q E ii Low Saturation Voltage Voltage Drive ( M O S ^ r - h W fi) • U Variety of Power Capacity Series ^ : A p p lic a tio n s mm* >'<—?
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2MBI75F-060
40f-ili
l95t/R89
aiwa TV A141KE
2MBI75F-060
30S3
T151
SH 04.31
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B209
Abstract: B-209
Text: 1DI75F-055 75a mm-*# ’•Outline Drawings POW ER T R A N S IS T O R M ODULE ^ Features • iSW/± High Voltage • 7' J — Kr t SR • ASOA'-Ja I ' • Including Free W h eeling Diode Excellent Safe Operating Area Insulated Type IffliÉ •Applications
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1DI75F-055
E82988
11S19^
B209
B-209
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1736d
Abstract: No abstract text available
Text: 6DI75M-050 75A 'U ± '< h - y < 7 _ Y = 7 > '> ^ ^ ì>d. - ì V l £ f ' :£ ï > d , - ) v O utline Draw ings POWER TRANSISTOR MODULE F e a tu r e s • f f ih FE H igh DC C u rre n t Gain • H ig h S peed S w itc h in g : A p p lic a tio n s • ? G eneral P urpose Inverter
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6DI75M-050
e9Ti30S3
1736d
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7MB175N-060
Abstract: fzh 111 7MBI75N-060 sl 0380 r 7mb175n AC2500 m0878 fuji igbt module 7MBI75N060 7mbi75n-060-10
Text: r a ilG B T -t ^ Z L — ? m r N'> rN'>lJ -Xj 7M BI75N-060 •; -X j 600V/75A/7^M : Features 40 High Speed Switching m W ±m h Voltag e Drive Low Inductance Module Structure Dynamic Brake Circuit 1 r kLLUha ■ zS : Applications >'< —$ Inverter for Motor Drive
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Xj7MBI75N-060
00V/75A/7fflffl
7MBI75N-060
A95/A95)
7MB175N-060
fzh 111
7MBI75N-060
sl 0380 r
7mb175n
AC2500
m0878
fuji igbt module
7MBI75N060
7mbi75n-060-10
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SPW 12w
Abstract: TMS380c16 RRU 32
Text: TMS380C26 NETWORK COMMPROCESSOR SPW S010A -APRIL 1992- R E V IS E D MARCH 1993 I • IEEE 802.5 and IBM Token-Ring Network Compatible • Low-Cost Host-Slave I/O Interface Option • IEEE 802.3 and Blue Book Ethernet™ Network Compatible • Selectable Host System-Bus Options
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TMS380C26
S010A
TMS380C16
18K-Byte
16-Mbps
TMS38054
10-Mbps
68xxx
SPW 12w
TMS380c16
RRU 32
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2MBI75F-120
Abstract: A-185 M216 T151
Text: 2MBI75F-120 75A IGBT IGBT M O DULE • f t « : Features • te lS * o * E • Low Saturation Voltage ( M O S ' r - H ftii) • Voltage Drive Variety of Power Capacity Series ■ E l i i : A pplications • > ' < —? • A C , DC“#- —# T > ~ 7 • Inverter for M otor Drive
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2MBI75F-120
I95t/R89)
A-185
M216
T151
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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Untitled
Abstract: No abstract text available
Text: 2MBI75F-060 75A IGBT : O utline D ra w in g s IGBT MODULE 23.0 , 23.0 , 2-05.4 • Features • I- 1-— rJ lo.O 10.0 10.0 Lo w S a tu ra tio n V o lta g e • U I± m W ) ( M O S ^ r - H * i £ ) V o lta g e D rive U V ariety o f P ow er C apacity Series
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2MBI75F-060
l95t/R89
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MAGNETIC SENSOR TRANSISTOR 21E
Abstract: PA73Q
Text: T '7 9 - 2 3 FEATURES • • • • • • LOW COST, ECONOMY MODEL— PA01 SECOND SOURCEABLE— PA73 HIGH OUTPUT CURRENT— Up to +5A PEAK EXCELLENT LINEARITY— PA01 HIGH SUPPLY VOLTAGE— Up to +34V ISOLATED CASE—300V APPLICATIONS • • • • •
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CASE--300V
20KHz
E1200VDC
PD12/60S:
500VDC
PD12/60C:
300VDC
PD12/60C;
MAGNETIC SENSOR TRANSISTOR 21E
PA73Q
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EZ 103
Abstract: E80276
Text: TM25RZ/EZ-24,-2H TM25RZ/EZ-24,-2H • It a v • If ( av ) • Vrrm • Vdrm 25A ^PlêjflOH/Tît. 25A t* - ïmmLi2*JŒ . 1200/1600V \d -ÏB M L *7 m i£ 1200/1600V • ï S â >^ ^ U 7 ’ - A • ULÜSÆfë
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TM25RZ/EZ-24
1200/1600V
E80276
E80271
180JtafÃ
60HziE&
EZ 103
E80276
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