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    SPW11N60 Search Results

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    SPW11N60 Price and Stock

    Rochester Electronics LLC SPW11N60CFDFKSA1

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey SPW11N60CFDFKSA1 Bulk 4,250 160
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    Rochester Electronics LLC SPW11N60S5

    N-CHANNEL POWER MOSFET
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    DigiKey SPW11N60S5 Bulk 160
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    Rochester Electronics LLC SPW11N60C3FKSA1

    MOSFET N-CH 650V 11A TO247-3
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    DigiKey SPW11N60C3FKSA1 Tube 166
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    Infineon Technologies AG SPW11N60C3FKSA1

    MOSFET N-CH 650V 11A TO247-3
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    DigiKey SPW11N60C3FKSA1 Tube
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    Avnet Americas SPW11N60C3FKSA1 Tube 4 Weeks 200
    • 1 $1.82
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    Rochester Electronics SPW11N60C3FKSA1 262,921 1
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    Infineon Technologies AG SPW11N60S5FKSA1

    MOSFET N-CH 600V 11A TO247-3
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    DigiKey SPW11N60S5FKSA1 Tube 240
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    Find more SPW11N60 price and stock on Findchips.com

    SPW11N60 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SPW11N60C2 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW11N60C2 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.38Ohm, 11.0A Original PDF
    SPW11N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.38Ohm, 11.0A Original PDF
    SPW11N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW11N60C3FKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-247 Original PDF
    SPW11N60CFD Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW11N60CFD Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 440.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 28.0 A; Original PDF
    SPW11N60CFDFKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-247 Original PDF
    SPW11N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW11N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.38Ohm, 11.0A Original PDF
    SPW11N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; VDS (max): 600.0 V; Package: TO-247; RDS(ON) @ TJ=25°C VGS=10: 380.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 22.0 A; Original PDF
    SPW11N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPW11N60S5FKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO-247 Original PDF

    SPW11N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11N60CFD

    Abstract: SPW11N60CFD 11N60C
    Text: SPW11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD P-TO247 Q67040-S4619 11N60CFD 11N60CFD SPW11N60CFD 11N60C

    Untitled

    Abstract: No abstract text available
    Text: SPW11N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated ID 11 A •=High peak current capability


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3

    SPW11N60S5

    Abstract: 06161L 11N60S5 equivalent 11N60S5
    Text: SPW11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38


    Original     		PDF SPW11N60S5 P-TO247 SPWx2N60S5 Q67040-S4239 11N60S5 SPW11N60S5 06161L 11N60S5 equivalent 11N60S5

    11n60c3

    Abstract: 11N60 SDP06S60 SPW11N60C3 06161L 11N60C
    Text: SPW11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11n60c3 11N60 SDP06S60 SPW11N60C3 06161L 11N60C

    11n60cfd

    Abstract: SPW11N60CFD 11N6
    Text: SPW11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD PG-TO247 Q67040-S4619 11N60CFD 11n60cfd SPW11N60CFD 11N6

    11N60S5

    Abstract: SPW11N60S5
    Text: SPW11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 11N60S5 SPW11N60S5

    11n60cfd

    Abstract: No abstract text available
    Text: SPW11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD PG-TO247 SPW11N60CFD Q67040-S4619 11N60CFD 11n60cfd

    Untitled

    Abstract: No abstract text available
    Text: SPW11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3

    AR1010

    Abstract: No abstract text available
    Text: SPW11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 AR1010

    SPD06S60

    Abstract: 11N60C3 transistor 11n60c3
    Text: SPW11N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 SPD06S60 11N60C3 transistor 11n60c3

    Untitled

    Abstract: No abstract text available
    Text: SPW11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPW11N60S5 P-TO247 Q67040-S4239 11N60S5

    11n60c2 equivalent

    Abstract: 11N60C 11N60C2 LMOS SPW11N60C2 SDP06S60
    Text: SPW11N60C2 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated


    Original     		PDF SPW11N60C2 P-TO247 Q67040-S4313 11N60C2 11n60c2 equivalent 11N60C 11N60C2 LMOS SPW11N60C2 SDP06S60

    11N60S5 equivalent

    Abstract: 11N60S5 SPW11N60S5
    Text: SPW11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPW11N60S5 PG-TO247 Q67040-S4239 11N60S5 11N60S5 equivalent 11N60S5 SPW11N60S5

    11n60c2

    Abstract: SPW11N60C2 SDP06S60
    Text: SPW11N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • Ultra low effective capacitances


    Original     		PDF SPW11N60C2 P-TO247 Q67040-S4313 11N60C2 11n60c2 SPW11N60C2 SDP06S60

    Untitled

    Abstract: No abstract text available
    Text: SPW11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances ID


    Original     		PDF SPW11N60S5 P-TO247 Q67040-S4239 11N60S5

    11N60C3

    Abstract: 11N60C SPW11N60C3 AR1010
    Text: SPW11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11N60C3 11N60C SPW11N60C3 AR1010

    11N60C3

    Abstract: 11N60C AR1010
    Text: SPW11N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11N60C3 11N60C AR1010

    11N60C

    Abstract: 11n60
    Text: SPW11N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • Ultra low effective capacitances


    Original     		PDF SPW11N60C2 P-TO247 Q67040-S4313 11N60C2 11N60C 11n60

    Ultra Low rds

    Abstract: No abstract text available
    Text: SPW11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD PG-TO247 SPW11N60CFD Q67040-S4619 11N60CFD Ultra Low rds

    11N60

    Abstract: 11N60S5 SPW11N60S5 Q67040-S4239 11n6 marking code 68W 70
    Text: SPW11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1


    Original     		PDF SPW11N60S5 SPWx2N60S5 SPW11N60S5 P-TO247 11N60S5 Q67040-S4239 11N60 11N60S5 Q67040-S4239 11n6 marking code 68W 70

    11N60C

    Abstract: 11n60cfd SPW11N60CFD
    Text: SPW11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		PDF SPW11N60CFD PG-TO247 Q67040-S4619 11N60CFD 11N60C 11n60cfd SPW11N60CFD

    siemens 350 98

    Abstract: 11N60S5 SPW11N60S5
    Text: SPW11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPW11N60S5 SPWx2N60S5 SPW11N60S5 P-TO247 11N60S5 Q67040-S4239 siemens 350 98 11N60S5

    Untitled

    Abstract: No abstract text available
    Text: SPW11N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability


    Original     		PDF SPW11N60C3 P-TO247 Q67040-S4418 11N60C3

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPW11N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/df rated • Optimized capacitances • Improved noise immunity • Former development designation:


    OCR Scan     		PDF SPW11N60S5 SPWx2N60S5 11N60S5 P-T0247 11N60S5 Q67040-S4239