SPU08N10 Search Results

SPU08N10 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SPU08N10		Infineon Technologies	Power MOSFET, 100V, I-PAK, RDSon=0.3 ?, 8.4A, NL		Original	PDF
SPU08N10		Siemens			Original	PDF
SPU08N10		Siemens	SIPMOS Power Transistor		Original	PDF
SPU08N10		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF

SPU08N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
d2422 Abstract: P-TO252 SPD08N10 SPU08N10 Text: SPD08N10 Preliminary data SPU08N10 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD08N10 100 V 8.4 A 0.3 Ω P-TO252 Q67000-. . . - . . SPU08N10 100 V 8.4 A	Original	SPD08N10 SPU08N10 P-TO252 Q67000-. P-TO251 23/Jan/1998 d2422 P-TO252 SPD08N10 SPU08N10	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
08N10 Abstract: P-TO252 SPD08N10 SPU08N10 A16H Text: Preliminary Data SPD 08N10 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.3 Ω Continuous drain current ID 8.4 A Enhancement mode • Avalanche rated • dv/dt rated	Original	08N10 SPD08N10 P-TO252 Q67040-S4126-A2 SPU08N10 P-TO251 Q67040-S4118-A2 08N10 P-TO252 SPD08N10 SPU08N10 A16H	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package	Original	615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D	PDF
P-TO252 Abstract: SPD08N10 SPU08N10 Text: SPD 08N10 Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.3 Ω Continuous drain current ID 8.4 A Enhancement mode • Avalanche rated • dv/dt rated	Original	08N10 SPD08N10 P-TO252 Q67040-S4126 SPU08N10 P-TO251 Q67040-S4118-A2 P-TO252 SPD08N10 SPU08N10	PDF
P-T0251 Abstract: spd08n Text: SIEMENS SPD08N10 Preliminary data SPU08N10 SIPMOS Power Transistor • N channel n. • Enhancement mode x • Avalanche-rated 1 2 ^ cr VPT09050 Pin 1 G Pin 2 Pin 3 D S Type ^DS fc *DS(on Package Ordering Code SPD08N10 100 V 8.4 A 0.3 Q, P-T0252 Q67000-.	OCR Scan	SPD08N10 SPU08N10 SPU08N10 P-T0252 P-T0251 Q67000-. P-T0251 spd08n	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8	OCR Scan	615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S	PDF
Untitled Abstract: No abstract text available Text: SPD 08N10 I nf ine on te ch no lo g iai Preliminary Data S IP M O S P o w e r T ra n s is to r Product Summary Features Drain source voltage • N channel Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated	OCR Scan	08N10 SPD08N10 P-T0252 Q67040-S4126 SPU08N10 P-T0251 Q67040-S4118-A2 S35bQ5 Q133777 SQT-89	PDF