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SPP2301D Abstract: MOSFET P-channel SOT-23 SPP2301DS23RG P-Channel SOT-23 Power MOSFET SPP2301DS23RGB mosfet vgs 5v mosfet vgs 5v SOT23 24A SOT23 Text: SPP2301D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	PDF	SPP2301D SPP2301D -20V/-2 MOSFET P-channel SOT-23 SPP2301DS23RG P-Channel SOT-23 Power MOSFET SPP2301DS23RGB mosfet vgs 5v mosfet vgs 5v SOT23 24A SOT23

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SPP2301D

Abstract: MOSFET P-channel SOT-23 SPP2301DS23RG P-Channel SOT-23 Power MOSFET SPP2301DS23RGB mosfet vgs 5v mosfet vgs 5v SOT23 24A SOT23
Text: SPP2301D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

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SPP2301D SPP2301D -20V/-2 MOSFET P-channel SOT-23 SPP2301DS23RG P-Channel SOT-23 Power MOSFET SPP2301DS23RGB mosfet vgs 5v mosfet vgs 5v SOT23 24A SOT23