Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SPP03N60 Search Results

    SF Impression Pixel

    SPP03N60 Price and Stock

    Rochester Electronics LLC SPP03N60C3XKSA1

    MOSFET N-CH 600V 3.2A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP03N60C3XKSA1 Tube 799
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.38
    • 10000 $0.38
    		Buy Now

    Infineon Technologies AG SPP03N60C3XKSA1

    LOW POWER_LEGACY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP03N60C3XKSA1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Rochester Electronics SPP03N60C3XKSA1 624,583 1
    • 1 $0.3611
    • 10 $0.3611
    • 100 $0.3394
    • 1000 $0.3069
    • 10000 $0.3069
    		Buy Now

    Infineon Technologies AG SPP03N60S5XKSA1

    LOW POWER_LEGACY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP03N60S5XKSA1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Rochester Electronics SPP03N60S5XKSA1 61,065 1
    • 1 $0.5833
    • 10 $0.5833
    • 100 $0.5483
    • 1000 $0.4958
    • 10000 $0.4958
    		Buy Now

    Rochester Electronics LLC SPP03N60S5XKSA1

    MOSFET N-CH 600V 3.2A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP03N60S5XKSA1 Tube 495
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.61
    • 10000 $0.61
    		Buy Now

    Infineon Technologies AG SPP03N60S5HKSA1

    MOSFET N-CH 600V 3.2A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP03N60S5HKSA1 Tube 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.6489
    • 10000 $0.6489
    		Buy Now
    Find more SPP03N60 price and stock on Findchips.com

    SPP03N60 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP03N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP03N60C3 Infineon Technologies CoolMOS Power MOS, 600V, TO-220, RDSon=1.40 ?, 3.2A Original PDF
    SPP03N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP03N60C3HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 3.2A TO-220AB Original PDF
    SPP03N60C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF
    SPP03N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP03N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP03N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=1.40 ?, 3.2A Original PDF
    SPP03N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPP03N60S5HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 3.2A TO-220AB Original PDF
    SPP03N60S5XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF

    SPP03N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    03N60S5

    Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: SPP03N60S5 SPB03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 SPP03N60S5 P-TO220-3-1 P-TO263-3-2 03N60S5 Q67040-S4184 03N60S5 Q67040-S4184 SPB03N60S5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP03N60C3 SPB03N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated R DS on 1.4 Ω • Extreme dv/dt rated ID 3.2 A • High peak current capability


    Original     		SPP03N60C3 SPB03N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4401 Q67040-S4391 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4184 Q67040-S4197 PDF

    03N60C3

    Abstract: SPB03N60C3 03n60 SPP03N60C3 SPA03N60C3 ID32 transistor smd list spa03n
    Text: Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP03N60C3 03N60C3 SPB03N60C3 03n60 SPP03N60C3 SPA03N60C3 ID32 transistor smd list spa03n PDF

    03N60S5

    Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5 P-TO-263-3-2
    Text: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4184 03N60S5 03N60S5 Q67040-S4184 SPB03N60S5 SPP03N60S5 P-TO-263-3-2 PDF

    SPPX4N60S5

    Abstract: 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 SPPx4N60S5/SPBx4N60S5 Q67040-S4184 03N60S5 SPPX4N60S5 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5 PDF

    03N60C3

    Abstract: SPP03N60C3 SDP06S60 SPB03N60C3
    Text: SPP03N60C3 SPB03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		SPP03N60C3 SPB03N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4401 03N60C3 03N60C3 SPP03N60C3 SDP06S60 SPB03N60C3 PDF

    diode 1538

    Abstract: No abstract text available
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP03N60S5 P-TO220-3-1 PG-TO220-3-1 SPP03N60S5 PG-TO220-3-1 Q67040-S4184 03N60S5 diode 1538 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP03N60S5 PG-TO220 P-TO220-3-1 Q67040-S4184 03N60S5 PDF

    03N60C3

    Abstract: No abstract text available
    Text: SPP03N60C3 SPB03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω


    Original     		SPP03N60C3 SPB03N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4401 Q67040-S4391 03N60C3 PDF

    03n60s5

    Abstract: No abstract text available
    Text: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4184 Q67040-S4197 03n60s5 PDF

    SMD Transistor g20

    Abstract: 03N60C3 2535-r
    Text: SPP03N60C3, SPB03N60C3 SPA03N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP03N60C3 SMD Transistor g20 03N60C3 2535-r PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP03N60S5 P-TO220-3-1 PG-TO220-3-1 SPP03N60S5 PG-TO220-3-1 Q67040-S4184 03N60S5 PDF

    03n60s5

    Abstract: TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-TO220-3-1 03N60S5 Q67040-S4184 P-TO263-3-2 SPP03N60S5 03n60s5 TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5 PDF

    TRANSISTOR SMD MARKING CODE 2A

    Abstract: 03N60S5 Q67040-S4184 SPP03N60S5
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP03N60S5 PG-TO220 P-TO220-3-1 Q67040-S4184 03N60S5 TRANSISTOR SMD MARKING CODE 2A 03N60S5 Q67040-S4184 SPP03N60S5 PDF

    03N60S5

    Abstract: P-TO263-3-2 P-TO-263-3-2 03N60S5 TO263 TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5 SPP03N60S5 diode 1538 03n60
    Text: SPP03N60S5 SPB03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4184 03N60S5 03N60S5 P-TO263-3-2 P-TO-263-3-2 03N60S5 TO263 TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5 SPP03N60S5 diode 1538 03n60 PDF

    03N60C3

    Abstract: SDP06S60 SPB03N60C3 SPP03N60C3 03n60
    Text: SPP03N60C3 SPB03N60C3 Final data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2 A •=High peak current capability


    Original     		SPP03N60C3 SPB03N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4401 03N60C3 03N60C3 SDP06S60 SPB03N60C3 SPP03N60C3 03n60 PDF

    03N60S5

    Abstract: Q67040-S4184 SPP03N60S5
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP03N60S5 PG-TO220 P-TO220-3-1 Q67040-S4184 03N60S5 03N60S5 Q67040-S4184 SPP03N60S5 PDF

    03n60s5

    Abstract: SPP03N60S5 Q67040-S4184 SPB03N60S5 P-TO-263-3-1 diode 1538
    Text: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 1.4 Ω • Optimized capacitances


    Original     		SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4184 03N60S5 Q67040-S4197 03n60s5 SPP03N60S5 Q67040-S4184 SPB03N60S5 P-TO-263-3-1 diode 1538 PDF

    03N60C3

    Abstract: No abstract text available
    Text: SPP03N60C3, SPB03N60C3 SPA03N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP03N60C3 03N60C3 PDF

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60 PDF

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Text: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    DIODE JS.9 smd

    Abstract: No abstract text available
    Text: SIEMENS SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-T0220-3-1 03N60S5 Q67040-S4184 P-T0263-3-2 DIODE JS.9 smd PDF