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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SPN8878B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the	Original	SPN8878B SPN8878B 0V/20A 0V/15A	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: SPN8878B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the

Original

SPN8878B SPN8878B 0V/20A 0V/15A

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