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SPN2318S23RGB Abstract: SPN2318 5V 2A MOSFET N-channel 2A-13 Vgs 40V mosfet Text: SPN2318 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	PDF	SPN2318 SPN2318 SPN2318S23RGB 5V 2A MOSFET N-channel 2A-13 Vgs 40V mosfet

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SPN2318S23RGB

Abstract: SPN2318 5V 2A MOSFET N-channel 2A-13 Vgs 40V mosfet
Text: SPN2318 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Original

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SPN2318 SPN2318 SPN2318S23RGB 5V 2A MOSFET N-channel 2A-13 Vgs 40V mosfet