Untitled
Abstract: No abstract text available
Text: Agilent Hard Disk Read/Write Test System E5023A Electronics Package E5010C Split Axis Spin Stand E5013A Combined Axis Spin Stand A Head Test System for Today and Tomorrow State-of-the-art heads require a state-of-the-art test system The aerial density of hard disk drives HDD increases about 60% every year.
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E5023A
E5010C
E5013A
5980-2820EN
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MBT3904DW1T1
Abstract: SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1
Text: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications
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MBT3904DW1T1,
MBT3906DW1T1,
MBT3946DW1T1
23/SOT
MBT3904DW1T1
MBT3906DW1T1
MBT3904DW1T1
SOT 363 NP
1N916
MBT3906DW1T1
MBT3946DW1T1
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Untitled
Abstract: No abstract text available
Text: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications
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MBT3904DW1T1,
MBT3906DW1T1,
MBT3946DW1T1
23/SOT
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
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MBT3904DW1T1G
Abstract: No abstract text available
Text: MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in
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MBT3904DW1T1G,
MBT3904DW2T1G,
SMBT3904DW1T1G
MBT3904DW1T1G
MBT3904DW2T1G
OT-23/SOT-323
OT-363
OT-363/SC-88/
SC70-6
MBT3904DW1T1/D
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistor LMBT3906DW1T1G 6 The LMBT3906DW1T1 device isa spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363
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LMBT3906DW1T1G
LMBT3906DW1T1
23/SOTâ
OT-363
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NST3946DP6T5G
Abstract: No abstract text available
Text: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963
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NST3946DP6T5G
NST3946DP6T5G
OT-23/SOT-323/SOT-563
OT-963
NST3946DP6T5G*
NST3946DP6/D
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Untitled
Abstract: No abstract text available
Text: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963
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NST3946DP6T5G
NST3946DP6T5G
23/SOTâ
323/SOTâ
NST3946DP6T5G*
NST3946DP6/D
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1N916
Abstract: LMBT3906DW1T1 LMBT3906DW1T1G NF 723
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistor LMBT3906DW1T1G 6 The LMBT3906DW1T1 device isa spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363
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LMBT3906DW1T1G
LMBT3906DW1T1
23/SOT
OT-363
195mm
150mm
3000PCS/Reel
8000PCS/Reel
1N916
LMBT3906DW1T1G
NF 723
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistor LMBT3904DW1T1G The LMBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363
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LMBT3904DW1T1G
LMBT3904DW1T1
23/SOTâ
OT-363
SC-88/SOT-363
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistor LMBT3906DW1T1G 6 The LMBT3906DW1T1 device isa spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363
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LMBT3906DW1T1G
LMBT3906DW1T1
23/SOTâ
OT-363
SC-88/SOT-363
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistor LMBT3904DW1T1G The LMBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363
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LMBT3904DW1T1G
LMBT3904DW1T1
23/SOTâ
OT-363
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NPN PNP sot-563
Abstract: NST3946DP6T5G
Text: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963
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NST3946DP6T5G
NST3946DP6T5G
OT-23/SOT-323/SOT-563
OT-963
NST3946DP6T5G*
NST3946DP6/D
NPN PNP sot-563
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LMBT3904DW1T1
Abstract: 1N916 LMBT3904DW
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistor LMBT3904DW1T1 The LMBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363
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LMBT3904DW1T1
LMBT3904DW1T1
23/SOT
OT-363
SC-88/SOT-363
LMBT3904DW1T1-7/7
1N916
LMBT3904DW
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LMBT3906DW1T1
Abstract: marking a2 ic 1N916
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistor LMBT3906DW1T1 6 The LMBT3906DW1T1 device isa spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363
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LMBT3906DW1T1
LMBT3906DW1T1
23/SOT
OT-363
SC-88/SOT-363
LMBT3906DW1T1-6/6
marking a2 ic
1N916
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Untitled
Abstract: No abstract text available
Text: MBT3904DW1T1G, MBT3904DW2T1G, SMMBT3904DW1TG Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in
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MBT3904DW1T1G,
MBT3904DW2T1G,
SMMBT3904DW1TG
MBT3904DW1T1G
MBT3904DW2T1G
23/SOTâ
363/SCâ
MBT3904DW1T1/D
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ma marking sot-363
Abstract: No abstract text available
Text: MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6
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MBT3946DW1T1G,
SMBT3946DW1T1G
MBT3946DW1T1G
OT-23/SOT-323
OT-363-6
AEC-Q101
MBT3946DW1T1/D
ma marking sot-363
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Untitled
Abstract: No abstract text available
Text: MBT3946DW1T1G, SMBT3946DW1T1G Complementary General Purpose Transistor The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6
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MBT3946DW1T1G,
SMBT3946DW1T1G
MBT3946DW1T1G
23/SOTâ
MBT3946DW1T1/D
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Untitled
Abstract: No abstract text available
Text: NST3904DXV6T1, NSVT3904DXV6T1, NST3904DXV6T5, SNST3904DXV6T5 Dual General Purpose Transistor http://onsemi.com The NST3904DXV6T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−563
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NST3904DXV6T1,
NSVT3904DXV6T1,
NST3904DXV6T5,
SNST3904DXV6T5
NST3904DXV6T1
23/SOTâ
NST3904DXV6T1/D
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LMBT3904DW1T1G
Abstract: 1N916 LMBT3904DW1T1
Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistor LMBT3904DW1T1G The LMBT3904DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363
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LMBT3904DW1T1G
LMBT3904DW1T1
23/SOT
OT-363
SC-88/SOT-363
LMBT3904DW1T1G
1N916
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SOT-1123
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Transistor LNST3906F3T5G TheLNST3906F3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in
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LNST3906F3T5G
TheLNST3906F3T5G
OT-23/SOT-323/SOT-563/SOT-963
OT-1123
SOT-1123
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marking CODE 5M pnp amg
Abstract: SOt323 marking code 6X NPN PNP sot-563 NST847BPDP6T5G 527AD marking AMG marking CODE 5M pnp
Text: NST847BPDP6T5G Dual Complementary General Purpose Transistor The NST847BPDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963
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NST847BPDP6T5G
NST847BPDP6T5G
OT-23/SOT-323/SOT-563
OT-963
NST847BPDP6T5G*
NST847BPDP6/D
marking CODE 5M pnp amg
SOt323 marking code 6X
NPN PNP sot-563
527AD
marking AMG
marking CODE 5M pnp
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Untitled
Abstract: No abstract text available
Text: NST847BPDP6T5G Dual Complementary General Purpose Transistor The NST847BPDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963
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NST847BPDP6T5G
NST847BPDP6T5G
23/SOTâ
323/SOTâ
NST847BPDP6T5G*
NST847BPDP6/D
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1N916
Abstract: MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
Text: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed
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MBT3904DW1T1/D
MBT3904DW1T1,
MBT3906DW1T1,
MBT3946DW1T1
23/SOT
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
1N916
MBT3904DW1T1
MBT3906DW1T1
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Untitled
Abstract: No abstract text available
Text: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963
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NST3946DP6T5G
NST3946DP6T5G
23/SOTâ
323/SOTâ
NST3946DP6/D
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