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Infineon Technologies AG SPI10N10 MOSFET N-CH 100V 10.3A TO262-3
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SPI10N10 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
SPI10N10		Infineon Technologies	SIPMOS Power-Transistor		Original	PDF
SPI10N10L		Infineon Technologies	Power MOSFET, 100V, TO-262, RDSon=154mOhm, 10A, LL		Original	PDF

SPI10N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
smd diode marking 78A Abstract: No abstract text available Text: SPI10N10 SPP10N10 SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated VDS 100 R DS on 170 m ID 10.3 A PG-TO262-3-1 V PG-TO220-3-1 dv/dt rated Type SPP10N10 Package Ordering Code	Original	PDF	SPI10N10 SPP10N10 PG-TO262-3-1 PG-TO220-3-1 SPP10N10 SPI10N10 PG-TO220-3-1 Q67042-S4118 PG-TO262-3-1 Q67042-S4120 smd diode marking 78A
10N10L Abstract: Q67042-S4162 TRANSISTOR SMD MARKING CODE 42 Q67042-S4163 SPI10N10L SPP10N10L Text: SPI10N10L SPP10N10L SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS 100 RDS on 154 m ID 10.3 A PG-TO262-3-1 Type Package Ordering Code Marking	Original	PDF	SPI10N10L SPP10N10L PG-TO262-3-1 PG-TO220-3-1 Q67042-S4163 10N10L 10N10L Q67042-S4162 TRANSISTOR SMD MARKING CODE 42 Q67042-S4163 SPI10N10L SPP10N10L
10N10L Abstract: Q67042-S4162 Q67042-S4163 Q67042-S4164 SPB10N10L SPI10N10L SPP10N10L SMD 81A Text: Preliminary data SPI10N10L SPP10N10L,SPB10N10L SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 VDS 100 RDS on 154 m ID 10.3 A P-TO263-3-2	Original	PDF	SPI10N10L SPP10N10L SPB10N10L P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP10N10L Q67042-S4163 10N10L 10N10L Q67042-S4162 Q67042-S4163 Q67042-S4164 SPB10N10L SPI10N10L SMD 81A
10N10 Abstract: SPB10N10 SPI10N10 SPP10N10 10n10 marking Q67042-S4118 spb10n10 g Text: Preliminary data SPI10N10 SPP10N10,SPB10N10 SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated P-TO262-3-1 VDS 100 R DS on 170 m ID 10.3 A P-TO263-3-2 V P-TO220-3-1 dv/dt rated	Original	PDF	SPI10N10 SPP10N10 SPB10N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP10N10 Q67042-S4118 10N10 SPB10N10 SPI10N10 10n10 marking Q67042-S4118 spb10n10 g
P-TO263-3-2 Abstract: P-TO262-3-1 P-TO-263-3-2 103a P-TO-262 10n10 marking Text: SPI10N10 SPP10N10,SPB10N10 Target data sheet SIPMOS =Power-Transistor Feature Product Summary • N-Channel VDS 100 V RDS on 180 mΩ ID 10.3 A • Enhancement mode •=175°C operating temperature • Avalanche rated P-TO262-3-1 P-TO263-3-2 P-TO220-3-1	Original	PDF	SPI10N10 SPP10N10 SPB10N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB10N10 SPI10N10 10N10 P-TO263-3-2 P-TO-263-3-2 103a P-TO-262 10n10 marking
S 170 MOSFET TRANSISTOR Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and	Original	PDF	B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book