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    SPECIFICATIONS OF SILICON CONTROL RECTIFIER Search Results

    SPECIFICATIONS OF SILICON CONTROL RECTIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    SPECIFICATIONS OF SILICON CONTROL RECTIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RUTTONSHA 120

    Abstract: RUTTONSHA 125RK160 Silicon Controlled Rectifiers "Silicon Controlled Rectifiers" 600 amp RUTTONSHA diode datasheet 125RK20 125RK 019K Silicon Controlled Rectifier ruttonsha
    Text: Ruttonsha International Rectifier Ltd. RUTTONSHA SILICON CONTROLLED RECTIFIERS 125RK SERIES Power Silicon Controlled Rectifiers 200 Amp RMS SCRs Types : 125RK20 TO 125RK160 FEATURES v Centre Amplifying Gate v International Standard case TO-209Ac TO-94 . v


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    125RK 125RK20 125RK160 O-209Ac 20UNF2A. 125RK 19K/W RUTTONSHA 120 RUTTONSHA 125RK160 Silicon Controlled Rectifiers "Silicon Controlled Rectifiers" 600 amp RUTTONSHA diode datasheet 019K Silicon Controlled Rectifier ruttonsha PDF

    tic106m

    Abstract: No abstract text available
    Text: TIC106 SERIES SILICON CONTROLLED RECTIFIERS Copyright 1999, Power Innovations Limited, UK ● 5 A Continuous On-State Current ● 30 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 200 µA APRIL 1971 - REVISED JULY 2000


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    TIC106 O-220 TIC106D TIC106M TIC106S TIC106N PDF

    TIC116M

    Abstract: TIC116D silicon controlled rectifier TIC116 TIC116N datasheet of tic116n TIC116S TIC116 Series "Silicon Controlled Rectifiers"
    Text: TIC116 SERIES SILICON CONTROLLED RECTIFIERS Copyright 2000, Power Innovations Limited, UK ● 8 A Continuous On-State Current ● 80 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 20 mA APRIL 1971 - REVISED JUNE 2000


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    TIC116 O-220 TIC116D TIC116M TIC116S TIC116N TIC116M TIC116D silicon controlled rectifier TIC116N datasheet of tic116n TIC116S TIC116 Series "Silicon Controlled Rectifiers" PDF

    TI23AB

    Abstract: TIC108D
    Text: TIC108 SERIES SILICON CONTROLLED RECTIFIERS Copyright 2000, Power Innovations Limited, UK ● 5 A Continuous On-State Current ● 20 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 1 mA APRIL 1971 - REVISED OCTOBER 2000


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    TIC108 O-220 TIC108D TIC108M TIC108S TIC108N TI23AB PDF

    tic126

    Abstract: TIC126M TIC126D equivalent TIC126D TIC126N TIC126S 12-ait TIC126 Series
    Text: TIC126 SERIES SILICON CONTROLLED RECTIFIERS Copyright 2000, Power Innovations Limited, UK ● 12 A Continuous On-State Current ● 100 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 20 mA APRIL 1971 - REVISED JUNE 2000


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    TIC126 O-220 TIC126D TIC126M TIC126S TIC126N TIC126M TIC126D equivalent TIC126D TIC126N TIC126S 12-ait TIC126 Series PDF

    TIC108

    Abstract: TIC108D TIC108M TIC108N TIC108S
    Text: TIC108 SERIES SILICON CONTROLLED RECTIFIERS Copyright 2000, Power Innovations Limited, UK ● 5 A Continuous On-State Current ● 20 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 1 mA APRIL 1971 - REVISED OCTOBER 2000


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    TIC108 O-220 TIC108D TIC108M TIC108S TIC108N TIC108D TIC108M TIC108N TIC108S PDF

    tic106

    Abstract: TIC106 TO-220 TIC106M TIC106D TIC106N TIC106S
    Text: TIC106 SERIES SILICON CONTROLLED RECTIFIERS Copyright 1999, Power Innovations Limited, UK ● 5 A Continuous On-State Current ● 30 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 200 µA APRIL 1971 - REVISED JULY 2000


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    TIC106 O-220 TIC106D TIC106M TIC106S TIC106N TIC106 TO-220 TIC106M TIC106D TIC106N TIC106S PDF

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS 1N4001-1N4007 1.0 SILICON RECTIFIER Green Products Technical Data Data Sheet N0543, Rev. - Marking Diagram: Where XXXXX is YYWWL 1N4001 SSG YY WW L = Part Name = SSG = Year = Week = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0


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    1N4001-1N4007 N0543, 1N4001 DO-41 5000pcs PDF

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS 1A1-1A7 1.0A MINIATURE SILICON RECTIFIER Green Products Technical Data Data Sheet N0542, Rev.- Marking Diagram Where XXXXX is YYWWL 1A1 SSG YY WW L = Part Name = SSG = Year = Week = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0


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    N0542, 5000pcs PDF

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS RL201-RL207 2.0 SILICON RECTIFIER Green Products Technical Data Data Sheet N0559, Rev. - Marking Diagram: Where XXXXX is YYWWL RL201 SSG YY WW L = Part Name = SSG = Year = Week = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0


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    RL201-RL207 N0559, RL201 DO-15 3000pcs PDF

    Untitled

    Abstract: No abstract text available
    Text: SANGDEST MICROELECTRONICS BY133 1.0 SILICON RECTIFIER Green Products Technical Data Data Sheet N0551, Rev. - Marking Diagram: Where XXXXX is YYWWL BY133 SSG YY WW L = Part Name = SSG = Year = Week = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0


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    BY133 N0551, DO-41 5000pcs PDF

    Thyristor to220

    Abstract: TIC108 TIC108D TIC108M TIC108N TIC108S TI23AB ti23a
    Text: TIC108 SERIES SILICON CONTROLLED RECTIFIERS Copyright 1997, Power Innovations Limited, UK ● 5 A Continuous On-State Current ● 20 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 1 mA APRIL 1971 - REVISED MARCH 1997


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    TIC108 O-220 TIC108D TIC108M TIC108S TIC108N Thyristor to220 TIC108D TIC108M TIC108N TIC108S TI23AB ti23a PDF

    thyristor tic126

    Abstract: tic126 TIC126M for thyristor tic126 Thyristor to220 tic126n TIC126D Gate Turn-off Thyristor single phase half controlled rectifier TIC126D equivalent
    Text: TIC126 SERIES SILICON CONTROLLED RECTIFIERS Copyright 1997, Power Innovations Limited, UK ● 12 A Continuous On-State Current ● 100 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 20 mA APRIL 1971 - REVISED MARCH 1997


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    TIC126 O-220 TIC126D TIC126M TIC126S TIC126N thyristor tic126 TIC126M for thyristor tic126 Thyristor to220 tic126n TIC126D Gate Turn-off Thyristor single phase half controlled rectifier TIC126D equivalent PDF

    70TPS12

    Abstract: INTERNATIONAL RECTIFIER scr MOSFET 1600v 100A 70tps SCR 100A 1600V single phase fully controlled rectifier Super-247 Package 70TPS16
    Text: Bulletin I2164 rev. A 10/04 SAFEIR Series 70TPS. PHASE CONTROL SCR VT < 1.4V @ 100A ITSM = 1400A VRRM = 1200, 1600V Description/ Features The 70TPS. SAFEIR series of silicon controlled rectifiers are specifically designed for high and medium power switching and phase control applications.


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    I2164 70TPS. 12-Mar-07 70TPS12 INTERNATIONAL RECTIFIER scr MOSFET 1600v 100A 70tps SCR 100A 1600V single phase fully controlled rectifier Super-247 Package 70TPS16 PDF

    TIC106 TO-220

    Abstract: TIC106D Thyristor tic106 TIC106D thyristor tic106 TIC106D equivalent TIC106M Thyristor to220 TIC106N TIC106S
    Text: TIC106 SERIES SILICON CONTROLLED RECTIFIERS Copyright 1997, Power Innovations Limited, UK ● 5 A Continuous On-State Current ● 30 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 200 µA APRIL 1971 - REVISED MARCH 1997


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    TIC106 O-220 TIC106D TIC106M TIC106S TIC106N TIC106 TO-220 TIC106D Thyristor TIC106D thyristor tic106 TIC106D equivalent TIC106M Thyristor to220 TIC106N TIC106S PDF

    thyristor tic126

    Abstract: TIC126M TIC126M Thyristor Thyristor to220 TIC126 TIC126N data sheet for thyristor tic126 TIC126D equivalent TIC126D TIC126S
    Text: TIC126 SERIES SILICON CONTROLLED RECTIFIERS Copyright 1997, Power Innovations Limited, UK ● 12 A Continuous On-State Current ● 100 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 20 mA APRIL 1971 - REVISED MARCH 1997


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    TIC126 O-220 TIC126D TIC126M TIC126S TIC126N thyristor tic126 TIC126M TIC126M Thyristor Thyristor to220 TIC126N data sheet for thyristor tic126 TIC126D equivalent TIC126D TIC126S PDF

    221A-09

    Abstract: 2n6507 application circuits 2N6507 2N6504
    Text: 2N6504 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater


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    2N6504 2N6504, 2N6505 2N6507 2N6508 2N6509 O-220 221A-09 2n6507 application circuits PDF

    thyristor tic116

    Abstract: TIC116 TIC116N TIC116M TIC116D Thyristor to220 TIC116S
    Text: TIC116 SERIES SILICON CONTROLLED RECTIFIERS Copyright 1997, Power Innovations Limited, UK ● 8 A Continuous On-State Current ● 80 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 20 mA APRIL 1971 - REVISED MARCH 1997


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    TIC116 O-220 TIC116D TIC116M TIC116S TIC116N thyristor tic116 TIC116N TIC116M TIC116D Thyristor to220 TIC116S PDF

    thyristor tic116

    Abstract: TIC116M TIC116 Thyristor to220 TIC116D TIC116 Series TIC116N TIC116S
    Text: TIC116 SERIES SILICON CONTROLLED RECTIFIERS Copyright 1997, Power Innovations Limited, UK ● 8 A Continuous On-State Current ● 80 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 20 mA APRIL 1971 - REVISED MARCH 1997


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    TIC116 O-220 TIC116D TIC116M TIC116S TIC116N thyristor tic116 TIC116M Thyristor to220 TIC116D TIC116 Series TIC116N TIC116S PDF

    TIC106D Thyristor

    Abstract: thyristor tic106 tic106 TIC106D TIC106 TO-220 TIC106M TIC106N TIC106S TC20AG
    Text: TIC106 SERIES SILICON CONTROLLED RECTIFIERS Copyright 1997, Power Innovations Limited, UK ● 5 A Continuous On-State Current ● 30 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 200 µA APRIL 1971 - REVISED MARCH 1997


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    TIC106 O-220 TIC106D TIC106M TIC106S TIC106N TIC106D Thyristor thyristor tic106 TIC106D TIC106 TO-220 TIC106M TIC106N TIC106S TC20AG PDF

    TIC106 TO-220

    Abstract: tic106 TIC106D TIC106M TIC106N TIC106S TC20AB TIC106 Series
    Text: TIC106 SERIES SILICON CONTROLLED RECTIFIERS ● 5 A Continuous On-State Current ● 30 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage K 1 ● Max IGT of 200 µA A 2 G 3 TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base.


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    TIC106 O-220 TIC106D TIC106M TIC106S TIC106N O-220 TIC106 TO-220 TIC106D TIC106M TIC106N TIC106S TC20AB TIC106 Series PDF

    Untitled

    Abstract: No abstract text available
    Text: SSI 33P3700 M M M lm 8-48 Mbit/s Magneto Optical Read Channel A TDK Group/Company Target Specification January 1994 Low drift AGC hold circuitry Tem perature com pensated, exponential control AGC Wide bandwidth, high precision full-wave rectifier Programmable LEVEL pin time constant with


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    33P3700 D01032L PDF

    6914

    Abstract: 33P3700
    Text: SSI 33P3700 ¿imtiSifskms 8-48 Mbit/s Magneto Optical Read Channel A TDK Group / Company Target Specification January 1 9 9 4 Low drift AGC hold circuitry Tem perature com pensated, exponential control AGC Wide bandwidth, high precision lull-wave rectifier


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    33P3700 001032b 6914 PDF

    klystron tubes

    Abstract: klystron DC Power Supplies
    Text: MICRO QUALITY / Application Notes S E M IC O N D U C TO R . INC Fast Recovery Rectifiers Fast Recovery Rectifiers A silicon rectifier cannot make an instantaneous switch from forward conduction to reverse blocking. For a momen­ tary period, prior to full blocking, the rectifier is a short


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    PDF