SPDX5N60S5 Search Results

SPDX5N60S5 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SPDX5N60S5		Infineon Technologies	Cool MOS TM Power Transistor		Original	PDF

SPDX5N60S5 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TRANSISTOR SMD MARKING CODE ag Abstract: AG SMD TRANSISTOR DIODE smd marking Ag siemens 350 98 P-TO251-3-1 P-TO252 SPDX5N60S5 SPUX5N60S5 Text: SPUX5N60S5 SPDX5N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • dv/dt rated • 150°C operating temperature Type VDS ID SPUX5N60S5 600 V 1.8 A Pin 1 Pin 2 Pin 3 G D	Original	SPUX5N60S5 SPDX5N60S5 SPUX5N60S5 X5N60S5 P-TO251-3-1 P-TO252 TRANSISTOR SMD MARKING CODE ag AG SMD TRANSISTOR DIODE smd marking Ag siemens 350 98 P-TO251-3-1 P-TO252 SPDX5N60S5	PDF
02N60S5 Abstract: 02N60 SPD02N60S5 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 P-TO251-3-1 P-TO252 02N60S5 02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5	PDF
02N6 Abstract: 02N60S5 SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Text: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5	PDF
02N60S5 Abstract: 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Text: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on	Original	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPUx5N60S5/SPDx5N60S5 Q67040-S4226 02N60S5 02N60S5 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5	PDF
02N6 Abstract: SPU02N60S5 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623 Text: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623	PDF
VPT09050 Abstract: VPT09051 Text: SIEMENS SPUX5N60S5 SPDX5N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type VDS b SPUX5N60S5 600 V 1.9 A	OCR Scan	SPUX5N60S5 SPDX5N60S5 VPT09051 VPT09050 X5N60S5 P-T0251-3-1 P-T0252 VPT09050 VPT09051	PDF
02N60S5 Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5 Text: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-T0251 02N60S5 Q67040-S4226 P-T0252 02N60S5 SMD TRANSISTOR MARKING 02N SPD02N60S5	PDF