spansion am29f top marking
Abstract: spansion top marking am29lv JC42 MBM29F S29CD016G S29CD-G 75281 170-nm spansion am29f part marking
Text: S29CD016G Known Good Die 16-Megabit 512 K x 32-Bit CMOS 2.5-Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory SUPPLEMENT This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates.
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S29CD016G
16-Megabit
32-Bit)
spansion am29f top marking
spansion top marking am29lv
JC42
MBM29F
S29CD-G
75281
170-nm
spansion am29f part marking
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S29CL032J
Abstract: S29CD032J cd032j S29Cl032 Spansion Flash Spansion wafer marking JC42 S29CD-J S29CL-J CL032J
Text: S29CD032J/S29CL032J Known Good Die 32 Megabit 1M x 32-Bit CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory with VersatileI/O Supplement (Preliminary) General Description The Spansion S29CD032J and S29CL032J devices are Floating Gate products fabricated in 110 nm process technology.
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S29CD032J/S29CL032J
32-Bit)
S29CD032J
S29CL032J
S29CD-J)
S29CL-J)
S29CD032J/S29CL032J
cd032j
S29Cl032
Spansion Flash
Spansion wafer marking
JC42
S29CD-J
S29CL-J
CL032J
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Spansion good die
Abstract: No abstract text available
Text: S29CD016G Known Good Die 16-Megabit 512 K x 32-Bit CMOS 2.5-Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory SUPPLEMENT Distinctive Characteristics Architecture Advantages — Program/Erase: 50 mA max — Standby mode: CMOS: 150 µA max
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S29CD016G
16-Megabit
32-Bit)
Spansion good die
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MB 16651
Abstract: MB 16651 G 98n03 Am29F JC42 MBM29F S29CD032G S29CD-G spansion am29f top marking 74228
Text: S29CD032G Known Good Die 32 Megabit 1 M x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Data Sheet Supplement This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates.
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S29CD032G
32-Bit)
MB 16651
MB 16651 G
98n03
Am29F
JC42
MBM29F
S29CD-G
spansion am29f top marking
74228
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spansion top marking am29lv
Abstract: S29CL016J S29CD016J S29CD-J S29CL-J Spansion wafer marking spansion am29f part marking
Text: S29CD016J/S29CL016J Known Good Die 16 Megabit 512k x 32-Bit CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Supplement (Advance Information) General Description The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.
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S29CD016J/S29CL016J
32-Bit)
S29CD016J
S29CL016J
S29CD-J)
S29CL-J)
S29CD016J/S29CL016J
spansion top marking am29lv
S29CD-J
S29CL-J
Spansion wafer marking
spansion am29f part marking
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S29CL016J
Abstract: S29CL032 S29CD016J am29lv JC42 S29CD-J S29CL-J CD016J cl016 CL-016
Text: S29CD016J/S29CL016J Known Good Die 16 Megabit 512k x 32-Bit CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory with VersatileI/O Supplement (Preliminary) General Description The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process technology.
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S29CD016J/S29CL016J
32-Bit)
S29CD016J
S29CL016J
S29CD-J)
S29CL-J)
S29CD016J/S29CL016J
S29CL032
am29lv
JC42
S29CD-J
S29CL-J
CD016J
cl016
CL-016
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31136
Abstract: S71NS064JA0BFW21
Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM PRELIMINARY Datasheet Distinctive Characteristics
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S71NS128JA0/S71NS064JA0
16-Bit)
Am29F
Am29LV
31136A3
31136
S71NS064JA0BFW21
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31136
Abstract: S71NS064JA0 spansion top marking am29lv S71NS128JA0 NF16-NF19 S99DCNLB044MSA002
Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics
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S71NS128JA0/S71NS064JA0
16-Bit)
31136A2
31136
S71NS064JA0
spansion top marking am29lv
S71NS128JA0
NF16-NF19
S99DCNLB044MSA002
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MICRON mcp
Abstract: 31136 S71NS064JA0 S71NS128JA0
Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics
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S71NS128JA0/S71NS064JA0
16-Bit)
31136A1
MICRON mcp
31136
S71NS064JA0
S71NS128JA0
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circuit diagram of nokia 101
Abstract: S29NS032J S29NS-J VDC048 VDE044 spansion am29f part marking Am29N643 450Ball
Text: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-J
16-Bit)
S29NS-J
circuit diagram of nokia 101
S29NS032J
VDC048
VDE044
spansion am29f part marking
Am29N643
450Ball
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ns032j0lbjw00
Abstract: B6 3308 S29NS032J S29NS-J VDC048 VDE044 LF35 Am29N643 NS064J0LBJW00
Text: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29NS-J
16-Bit)
S29NS-J
ns032j0lbjw00
B6 3308
S29NS032J
VDC048
VDE044
LF35
Am29N643
NS064J0LBJW00
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LF35
Abstract: S29NS032J S29NS-J VDC048 VDE044 NS064J0LBJW00 Nokia c7 AMAX-16 NS032J0PBJW00 Am29N643
Text: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories Data Sheet Notice to Readers: This document states the current technical specifications
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S29NS-J
16-Bit)
S29NS-J
LF35
S29NS032J
VDC048
VDE044
NS064J0LBJW00
Nokia c7
AMAX-16
NS032J0PBJW00
Am29N643
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FDD047
Abstract: SA70
Text: Am29N323D Data Sheet Retired Product Am29N323D Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.
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Am29N323D
FDD047
SA70
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LAA080-80-ball
Abstract: JC42 MBM29F PRQ080 S29CD016G S29CD032G S29CD-G fujitsu SL grade LAA080
Text: S29CD-G Flash Family S29CD032G, S29CD016G 32 Megabit 1M x 32-Bit , 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O featuring 170 nm Process Technology Data Sheet PRELIMINARY Notice to Readers: This document states the current technical specifications
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S29CD-G
S29CD032G,
S29CD016G
32-Bit)
LAA080-80-ball
JC42
MBM29F
PRQ080
S29CD016G
S29CD032G
fujitsu SL grade
LAA080
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CD032G0RF
Abstract: PRQ080
Text: S29CD032G 32 Megabit 1 M x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory S29CD032G Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29CD032G
32-Bit)
S29CD032G
CD032G0RF
PRQ080
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JC42
Abstract: S29CD016G S29CD016J S29CD032G S29CD032J S29CD-G S29CD-J LAA080-80-ball cd016
Text: S29CD-G Flash Family S29CD032G, S29CD016G 32 Megabit 1M x 32-Bit , 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory with VersatileI/O featuring 170 nm Process Technology S29CD-G Flash Family Cover Sheet
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S29CD-G
S29CD032G,
S29CD016G
32-Bit)
S29CD016J
S29CD032J
S29CD016G
S29CD032G
JC42
S29CD-J
LAA080-80-ball
cd016
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transistor c124 esn
Abstract: transistor SA235 S71NS064NA0
Text: S71NS128NA0/S71NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and PSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) PSRAM
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S71NS128NA0/S71NS064NA0
16-bit)
S71NS128
064NA0
transistor c124 esn
transistor SA235
S71NS064NA0
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S29NS128N
Abstract: S29NS256N S29NS-N VDC048 VDE044 bjw marking code
Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory S29NS-N MirrorBit™ Flash Family Cover Sheet Data Sheet (Advance Information)
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S29NS-N
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
S29NS128N
S29NS256N
VDC048
VDE044
bjw marking code
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TLA064
Abstract: S71PL129JC0 S29PL129J S71PL129JA0 S71PL129JB0
Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION
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S71PL129JC0/S71PL129JB0/S71PL129JA0
16-bit)
S71PL129Jxx
TLA064
S71PL129JC0
S29PL129J
S71PL129JA0
S71PL129JB0
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Am29N643
Abstract: ns064j0lb 5M-199 s29ns032 s99d
Text: S29NS128J/S29NS064J/S29NS032J/ S29NS016J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories Distinctive Characteristics
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S29NS128J/S29NS064J/S29NS032J/
S29NS016J
16-Bit)
S29NS016J/S29NS032J/S29NS064J/S29NS128J
Am29N643
ns064j0lb
5M-199
s29ns032
s99d
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S29WS064J
Abstract: 2222H
Text: Am29BDS320G Data Sheet The Am29BDS320G has been retired and is not recommended for designs. For new and current designs, S29WS064J supersedes Am29BDS320G and is the factory-recommended migration path for this device. Please refer to the S29WS064J data sheet for specifications and ordering information.
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Am29BDS320G
S29WS064J
27243B2
2222H
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bjw marking code
Abstract: S29NS128N S29NS256N S29NS-N VDC048 VDE044 spansion am29f part marking
Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory S29NS-N MirrorBit™ Flash Family Cover Sheet Data Sheet (Advance Information)
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S29NS-N
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
bjw marking code
S29NS128N
S29NS256N
VDC048
VDE044
spansion am29f part marking
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SA1127
Abstract: SA1115 JEDEC Matrix Tray outlines SA1117
Text: S71PL127JB0/S71PL129JB0/S71PL064JB0 with pSRAM Type 2, Rev D based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64 Megabit (8/4M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 32 Megabit (2M x 16-bit) Static RAM/Pseudo Static RAM
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S71PL127JB0/S71PL129JB0/S71PL064JB0
16-bit)
S71PL-JB0
SA1127
SA1115
JEDEC Matrix Tray outlines
SA1117
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JC42
Abstract: MBM29F PRQ080 S29CD016G SG555 FAI01
Text: S29CD016G 16 Megabit 512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Data Sheet Distinctive Characteristics Architecture Advantages Simultaneous Read/Write operations — Two bank architecture: large bank/ small bank
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S29CD016G
32-Bit)
S29CD016
JC42
MBM29F
PRQ080
S29CD016G
SG555
FAI01
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