bcx5316
Abstract: BCX5616
Text: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5616 ISSUE 5 – MARCH 2001 C COMPLEMENTARY TYPE – BCX5316 PARTMARKING DETAIL – BL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage
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BCX5616
BCX5316
500mA,
150mA,
100MHz
bcx5316
BCX5616
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TRANSISTOR SMD CODE PACKAGE SOT89
Abstract: GHz PNP transistor BFQ149 smd transistor code B2 TRANSISTOR SMD CODE PACKAGE SOT89 4
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ149 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFQ149 PINNING PNP transistor in a SOT89 envelope.
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BFQ149
MBK514
TRANSISTOR SMD CODE PACKAGE SOT89
GHz PNP transistor
BFQ149
smd transistor code B2
TRANSISTOR SMD CODE PACKAGE SOT89 4
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BFQ19
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ19 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFQ19 PINNING NPN transistor in a SOT89 plastic
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BFQ19
BFQ19
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FCX1051A
Abstract: FCX1151A DSA003684
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;
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FCX1151A
FCX1051A
100ms
FCX1051A
FCX1151A
DSA003684
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;
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FCX1151A
FCX1051A
100ms
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fcx720
Abstract: PARTMARKING 619 FCX619 DSA003686
Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX619 ISSUE 5 - SEPTEMBER 1999 FEATURES * 2W POWER DISSIPATION * * * * * 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. EXTREMELY LOW EQUIVALENT ON-RESISTANCE;
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FCX619
FCX720
Dissip00mA*
200mA,
100MHz
fcx720
PARTMARKING 619
FCX619
DSA003686
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Untitled
Abstract: No abstract text available
Text: PART OBSOLETE - USE SXTA42 SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF620 ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE:
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SXTA42
BF621
BF620
100MHz
FMMTA42
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SXTA42
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use SXTA42 SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF620 ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies
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SXTA42
BF621
BF620
100MHz
FMMTA42
SXTA42
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BF620
Abstract: BF621 FMMTA42
Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF620 ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE: BF621 C E C PARTMARKING DETAIL –
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BF620
BF621
ELE20
100MHz
FMMTA42
BF620
BF621
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2d SMD PNP TRANSISTOR
Abstract: 2d SMD npn TRANSISTOR TRANSISTOR SMD MARKING CODE 2d
Text: SO T8 9 PXTA92 300 V, 100 mA PNP high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description PNP high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.
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PXTA92
SC-62)
PXTA42.
AEC-Q101
2d SMD PNP TRANSISTOR
2d SMD npn TRANSISTOR
TRANSISTOR SMD MARKING CODE 2d
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Untitled
Abstract: No abstract text available
Text: HT70xxA-2 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 1% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package
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HT70xxA-2
OT23-5
HT70xxA-2
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Untitled
Abstract: No abstract text available
Text: HT70xxA-2 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 1% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package
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HT70xxA-2
OT23-5
HT70xxA-2
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TRANSISTOR SMD MARKING CODE 1d
Abstract: SMD TRANSISTOR MARKING 1D placeholder for manufacturing site code
Text: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.
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PXTA42
SC-62)
PXTA92.
AEC-Q101
TRANSISTOR SMD MARKING CODE 1d
SMD TRANSISTOR MARKING 1D
placeholder for manufacturing site code
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Untitled
Abstract: No abstract text available
Text: SO T8 9 PXTA42 300 V, 100 mA NPN high-voltage transistor Rev. 5 — 11 July 2011 Product data sheet 1. Product profile 1.1 General description NPN high-voltage transistor in a medium power and flat lead SOT89 SC-62 Surface-Mounted Device (SMD) plastic package.
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PXTA42
SC-62)
PXTA92.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: HT70xxA-2 TinyPowerTM Voltage Detector Features • Low power consumption · Output voltage accuracy: tolerance ± 1% · Low temperature coefficient · Built-in hysteresis characteristic · High input voltage range up to 24V · TO92, SOT89 and SOT23-5 package
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HT70xxA-2
OT23-5
HT70xxA-2
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PBSS4041PX
Abstract: MARKING SMD TRANSISTOR P TRANSISTOR SMD CODE PACKAGE SOT89 4 SMD TRANSISTOR MARKING 6G
Text: PBSS4041PX 60 V, 5 A PNP low VCEsat BISS transistor Rev. 01 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
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PBSS4041PX
SC-62)
PBSS4041NX.
AEC-Q101
PBSS4041PX
MARKING SMD TRANSISTOR P
TRANSISTOR SMD CODE PACKAGE SOT89 4
SMD TRANSISTOR MARKING 6G
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FCX596
Abstract: FMMT596
Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR Issue 4 - November 2006 FCX596 PARTMARKING DETAIL- P96 B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VcB O -220 V Collector-Emitter Voltage V CEO -200 V Emitter-Base Voltage V ebo -5 V Peak Pulse Current
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FCX596
Tamtp25Â
-10mA*
-200V
-250mA
-25mA*
FCX596
FMMT596
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Untitled
Abstract: No abstract text available
Text: □(□53=131 0035DL.2 715 B A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AMER PHILIPS/DISCRETE DESCRIPTION b7E ]> PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is
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0035DL
BFQ19
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BFQ19
Abstract: UBB774 transistor dc 558 npn 947 transistor A 1282 transistor DGSS D 1652 transistor
Text: 1^53^31 DGSSDt.2 715 B A P X Philips Sem iconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AUER PHILIPS/DISCRETE DESCRIPTION b7E ]>' PINNING NPN transistor In a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is
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BFQ19
DA000
BFQ19
UBB774
transistor dc 558 npn
947 transistor
A 1282 transistor
DGSS
D 1652 transistor
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FCX5401
Abstract: FCX5550 VCEO150V 100-X
Text: FCX5401 SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FEA T U R ES * HIGH V c e o = 1 5 0 V . * LOW V c e SAT i = 0 .2 5 V . * CO M PLEM EN TARY TYP E - FCX5550. PARTM ARKING D ETA ILS - P9 ABSOLUTE MAXIMUM RATINGS PARAMETER SYM BOL Collector-Base Voltage
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FCX5401
FCX5550.
-10mA
-10hA
-120V
-10mA,
-50mA,
FCX5401
FCX5550
VCEO150V
100-X
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le2m
Abstract: BFN17
Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -OCTOBER 1995 O COMPLEMENTARY TYPE PARTMARKING DETAILS - BFN17 DD BFN16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT VCBO 250 V -V « o 250 V ^EBO 5 V Collector-Base Voltage C ollector-E m itter Voltage
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BFN16
BFN17
100jiA
fc-20m
lc-20m
20MHz
300us.
FMMTA42
le2m
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Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -OCTOBER 1995 £ _ CO M PLEM ENTARY T Y P E - BFN17 PARTMARKING DETAILS - DD ABSOLUTE MAXIMUM RATINGS. VALUE UNIT V cbo 250 V V CEO 250 V V ebo 5 V mA PARAMETER SYMBOL Collector-Base Voltage
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BFN17
lc-10m
300us.
FMMTA42
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Am ps Extrem ely Low Saturation Voltage E.g. 60mv Typ. Extrem ely Low Equivalent On-resistance;
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FCX1151A
FCX1051A
-50mA,
50MHz
-20mA,
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Untitled
Abstract: No abstract text available
Text: 0035104 TT 4 W A P X N A*ER PlJILIPS/DISCRETE PNP 5 GHz wideband transistor b?E D ^53131 Philips Semiconductors DESCRIPTION Product specification e BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers
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BFQ149
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