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    SOT89 TRANSISTOR MARKING 851 Search Results

    SOT89 TRANSISTOR MARKING 851 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SOT89 TRANSISTOR MARKING 851 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BC868 SOT-89 Transistor NPN 1. BASE 2. COLLECTOR SOT-89 3. EMITTER Features — 4.6 4.4 1.8 1.4 1.6 1.4 High current Low voltage — 2.6 4.25 2.4 3.75 0.8 MIN MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol B Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF BC868 OT-89 OT-89 100MHz 500mA 100mA BC868-10 BC868-16 BC868-25

    SMD Marking Code 43a

    Abstract: BC640 SPICE model transistor C640 to92 marking code DG SMD Transistor TRANSISTOR SMD MARKING CODE 723 BC640 smd A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE 9339 BC640,116 TRANSISTOR SMD MARKING CODE LF
    Text: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA


    Original     		PDF BC640; BCP53; BCX53 BC640 BCP53 SC-43A SC-73 SC-62 O-243 SMD Marking Code 43a BC640 SPICE model transistor C640 to92 marking code DG SMD Transistor TRANSISTOR SMD MARKING CODE 723 BC640 smd A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE 9339 BC640,116 TRANSISTOR SMD MARKING CODE LF

    PXT8550

    Abstract: marking Y2 Y2 SOT-89 transistor marking y2
    Text: PXT8550 SOT-89 Transistor NPN 1. BASE 1 SOT-89 2. COLLECTOR 2 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER 3 B Features — 2.6 4.25 2.4 3.75 Compliment to PXT8050 0.8 MIN MARKING: Y2 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF PXT8550 OT-89 OT-89 PXT8050 -800mA -800mA, -80mA -10mA PXT8550 marking Y2 Y2 SOT-89 transistor marking y2

    Untitled

    Abstract: No abstract text available
    Text: 2SB766 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B 2.6 4.25 2.4 3.75 Features — — 0.8 MIN Large collector power dissipation PC Complementary to 2SD874 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SB766 OT-89 OT-89 2SD874 -500mA, -50mA -50mA, 200MHz

    Untitled

    Abstract: No abstract text available
    Text: 2SD874A SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER B 3 Features 2.6 4.25 2.4 3.75 0.8 MIN — Large collector power dissipation PC — Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A — 4.6 4.4 1.8 1.4 1.6 1.4


    Original     		PDF 2SD874A OT-89 OT-89 2SB766A 500mA 200MHz 500mA

    Y1 SOT-89

    Abstract: PXT8050 Marking y1 marking Y1 transistor marking y1 sot-89 transistor marking y1 y1 sot89 PXT8050 Y1
    Text: PXT8050 SOT-89 Transistor NPN 1. BASE 2. COLLECTOR SOT-89 3. EMITTER Features — 4.6 4.4 1.8 1.4 1.6 1.4 B Compliment to PXT8550 2.6 4.25 2.4 3.75 MARKING: Y1 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF PXT8050 OT-89 OT-89 PXT8550 800mA 800mA, 30MHz 100uA, 100mA Y1 SOT-89 PXT8050 Marking y1 marking Y1 transistor marking y1 sot-89 transistor marking y1 y1 sot89 PXT8050 Y1

    utc 2sa684l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA684 PNP SILICON TRANSISTOR PNP SILICON TRANSISTOR  DESCRIPTION The UTC 2SA684 is power amplifier and driver.  FEATURES * Automatic insertion by radial taping possible. * Complementary pair with 2SC1384.  ORDERING INFORMATION


    Original     		PDF 2SA684 2SA684 2SC1384. 2SA684G-x-AB3-R 2SA684L-x-T9N-B 2SA684G-x-T9N-B 2SA684L-x-T9N-K 2SA684G-x-T9N-K OT-89 O-92NL utc 2sa684l

    Untitled

    Abstract: No abstract text available
    Text: 2SB766A PNP EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 2 3 SOT-89 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter 1 Symbol Value Units Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage


    Original     		PDF 2SB766A OT-89 200MHz 26-Dec-08 OT-89 500TYP

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC1384 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR  DESCRIPTION The UTC 2SC1384 is power amplifier and driver.  FEATURES * Low VCE SAT * 2~3W output in complementary pair with 2SA684  ORDERING INFORMATION Ordering Number


    Original     		PDF 2SC1384 2SC1384 2SA684 2SC1384G-x-AB3-R OT-89 2SC1384L-x-T9N-B 2SC1384G-x-T9N-B O-92NL 2SC1384L-x-T9N-K 2SC1384G-x-T9N-K

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD874 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 1 A ICM: Collector-base voltage


    Original     		PDF OT-89 2SD874 OT-89 500mA 500mA, 200MHz

    SOT-89

    Abstract: 2SB766
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB766 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -1 A ICM: Collector-base voltage


    Original     		PDF OT-89 2SB766 OT-89 -500mA -500mA, -50mA -50mA, 200MHz SOT-89 2SB766

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD874A SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 1 A ICM: Collector-base voltage


    Original     		PDF OT-89 2SD874A OT-89 500mA 500mA, 200MHz

    2SB766

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB766 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -1 A ICM: Collector-base voltage -30 V V(BR)CBO:


    Original     		PDF OT-89 2SB766 OT-89 -500mA -500mA, -50mA -50mA, 200MHz 2SB766

    BC868

    Abstract: BC868-10 BC868-16 BC868-25
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 BC868 Plastic-Encapsulate Transistors SOT-89 TRANSISTOR NPN FEATURES z High current z Low voltage 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF OT-89 BC868 500mA 100mA 100MHz BC868-10 BC868-16 BC868-25 BC868 BC868-10 BC868-16 BC868-25

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD874 Features • • NPN Silicon Power Transistors With SOT-89 package Power amplifier applications Maximum Ratings


    Original     		PDF 2SD874 OT-89 OT-89 10uAdc, 500mAdc, 50mAdc) 500mAdc 50mAdc,

    2SB766A

    Abstract: 2SD874A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD874A SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A z


    Original     		PDF OT-89 2SD874A OT-89 2SB766A 500mA 500mA 200MHz 2SB766A 2SD874A

    PXT8050

    Abstract: Y2 SOT-89 PXT8550
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors PXT8550 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Compliment to PXT8050 1 2. COLLECTOR 2 MARKING: Y2 3 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF OT-89 PXT8550 OT-89 PXT8050 -100mA -800mA -800mA, -80mA PXT8050 Y2 SOT-89 PXT8550

    2SB766

    Abstract: 2SD874
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB766 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z Large collector power dissipation PC z Complementary to 2SD874 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-89 2SB766 OT-89 2SD874 -500mA -500mA, -50mA -50mA, 2SB766 2SD874

    transistor marking 6A

    Abstract: ZXTN2010Z ZXTN2010ZTA
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z transistor marking 6A ZXTN2010Z ZXTN2010ZTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z

    PXT8050

    Abstract: Y1 SOT-89 marking y1 marking y1 sot-89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 PXT8050 Plastic-Encapsulate Transistors SOT-89 TRANSISTOR NPN FEATURES z Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF OT-89 PXT8050 PXT8550 100mA 800mA 800mA, 30MHz PXT8050 Y1 SOT-89 marking y1 marking y1 sot-89

    ZXTN2010ZTA

    Abstract: ZXTN2010Z 0019E
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z ZXTN2010ZTA ZXTN2010Z 0019E

    npn 120v 10a transistor

    Abstract: ZX5T851Z ZX5T851ZTA
    Text: ZX5T851Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		PDF ZX5T851Z npn 120v 10a transistor ZX5T851Z ZX5T851ZTA

    sot-89 Marking code BQ

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SB766A THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF OT-89 OD-123+ FM120-M+ 2SB766A FM1200-M+ OD-123H 060TYP M180-MH FM1100-MH FM1150-MH sot-89 Marking code BQ