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    SOT89 TRANSISTOR MARKING Search Results

    SOT89 TRANSISTOR MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SOT89 TRANSISTOR MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound


    Original     		BCX5316Q J-STD-020 MIL-STD-202 -500mV DS37033 PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state


    Original     		ZXTP2008Z ZX5T949Z PDF

    ZXTN19020DZ

    Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
    Text: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor


    Original     		ZXTP19020DZ -47mV ZXTN19020DZ D-81541 ZXTN19020DZ ZXTP19020DZ ZXTP19020DZTA TS16949 PDF

    ZXTN19060CZ

    Abstract: TS16949 ZXTP19060CZ ZXTP19060CZTA
    Text: ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BVCEO > -60V BVECO > -7V IC cont = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 2.4W Complementary part number ZXTN19060CZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor


    Original     		ZXTP19060CZ -80mV ZXTN19060CZ ZXTP19060CZTA D-81541 ZXTN19060CZ TS16949 ZXTP19060CZ ZXTP19060CZTA PDF

    TS16949

    Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
    Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		ZXTN25100DZ 100mV ZXTP25100CZ D-81541 TS16949 ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ PDF

    ZXTN2007Z

    Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
    Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2007Z ZXTN2007ZTA TAP26100 ZXTN2007Z ZXTN2007ZTA ZXTN MARKING 7A SOT89 PDF

    ZXTP2014Z

    Abstract: ZXTP2014ZTA
    Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		ZXTP2014Z -140V ZXTP2014ZTA ZXTP2014Z ZXTP2014ZTA PDF

    SOT89 transistor marking 5A

    Abstract: ZXTN2011Z ZXTN2011ZTA
    Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2011Z ZXTN2011ZTA SOT89 transistor marking 5A ZXTN2011Z ZXTN2011ZTA PDF

    Untitled

    Abstract: No abstract text available
    Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management


    Original     		FCX555 -180V FCX555TA FCX555 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2011Z ZXTN2011ZTA ZXTN20miconductors PDF

    Zetex ZXTP19100CZ

    Abstract: No abstract text available
    Text: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		ZXTN19100CZ ZXTP19100CZ D-81541 Zetex ZXTP19100CZ PDF

    Bv 42 transistor

    Abstract: No abstract text available
    Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		ZXTP2014Z -140V ZXTP2014ZTA Bv 42 transistor PDF

    ZX5T849Z

    Abstract: ZX5T849ZTA MARKING 7A SOT89
    Text: ZX5T849Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZX5T849Z ZX5T849ZTA ZX5T849Z ZX5T849ZTA MARKING 7A SOT89 PDF

    ZXTN19020DZTA

    Abstract: TS16949 ZXTN19020DZ ZXTP19020DZ
    Text: ZXTN19020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 7.5A VCE(sat) < 35mV @ 1A RCE(sat) = 21m⍀ PD = 2.4W Complementary part number ZXTP19020DZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		ZXTN19020DZ ZXTP19020DZ D-81541 ZXTN19020DZTA TS16949 ZXTN19020DZ ZXTP19020DZ PDF

    ZX5T955Z

    Abstract: ZX5T955ZTA Bv 42 transistor
    Text: ZX5T955Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC


    Original     		ZX5T955Z -140V ZX5T955ZTA ZX5T955Z ZX5T955ZTA Bv 42 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management


    Original     		FCX555 -180V FCX555TA FCX555 PDF

    ZXTN2005Z

    Abstract: ZXTN2005ZTA
    Text: ZXTN2005Z 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2005Z INFORMAT26100 ZXTN2005Z ZXTN2005ZTA PDF

    marking 951

    Abstract: SOT89 transistor marking 5A ZXTP2012Z ZXTP2012ZTA
    Text: ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		ZXTP2012Z Powe26100 marking 951 SOT89 transistor marking 5A ZXTP2012Z ZXTP2012ZTA PDF

    ZX5T853Z

    Abstract: ZX5T853ZTA
    Text: ZX5T853Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZX5T853Z ZX5T853ZTA ZX5T853Z ZX5T853ZTA PDF

    FCX555

    Abstract: FCX555TA 100MHZ TS-4020
    Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management


    Original     		FCX555 -180V FCX555TA FCX555 FCX555TA 100MHZ TS-4020 PDF

    FCX1053A

    Abstract: FCX1053ATA 78m marking
    Text: FCX1053A SOT89 NPN medium power transistor Summary BVCEO = 75V RCE sat = 78m⍀ IC = 3A Description This medium power NPN transistor, offered in the SOT89 package provides high current and low saturation voltage making it ideal for use in various driving and power management applications.


    Original     		FCX1053A FCX1053A FCX1053ATA 78m marking PDF

    SOT89 transistor marking 4A high frequency

    Abstract: ZX5T953ZTA ZX5T953Z
    Text: ZX5T953Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC


    Original     		ZX5T953Z -100V ZX5T953ZTA SOT89 transistor marking 4A high frequency ZX5T953ZTA ZX5T953Z PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTN19020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 7.5A VCE(sat) < 35mV @ 1A RCE(sat) = 21m⍀ PD = 2.4W Complementary part number ZXTP19020DZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		ZXTN19020DZ ZXTP19020DZ D-81541 PDF

    ZXTN19100CZ

    Abstract: TS16949 ZXTN19100CZTA ZXTP19100CZ
    Text: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		ZXTN19100CZ ZXTP19100CZ D-81541 ZXTN19100CZ TS16949 ZXTN19100CZTA ZXTP19100CZ PDF