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    SOT89 MOS Search Results

    SOT89 MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    SOT89 MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot89 stencil

    Abstract: sot89 land pattern Loctite 218 RG200 substrate 5989-0810EN LOCTITE-96sc Getek LOCTITE 384 RG200 laser gun
    Text: SOT89 Package Application Note 5051 Introduction PCB Land Pattern and Stencil Design Avago Technologies SOT89 is a 3 I/O pins Figure 1 package platform designed to offer excellent heat dissipation and wide RF frequency response. The SOT89 package itself is lead free with a dimension of 4.1 mm


    Original     		PDF 5989-0810EN sot89 stencil sot89 land pattern Loctite 218 RG200 substrate LOCTITE-96sc Getek LOCTITE 384 RG200 laser gun

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state


    Original     		PDF ZXTP2008Z ZX5T949Z

    Untitled

    Abstract: No abstract text available
    Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP


    Original     		PDF ZXTP25020DZ -65mV ZXTN25020DZ D-81541

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -40V  Case: SOT89  IC = -5.5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.


    Original     		PDF J-STD-020 -60mV DS33419

    ZXTN2007Z

    Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
    Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2007Z ZXTN2007ZTA TAP26100 ZXTN2007Z ZXTN2007ZTA ZXTN MARKING 7A SOT89

    Untitled

    Abstract: No abstract text available
    Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management


    Original     		PDF FCX555 -180V FCX555TA FCX555

    TS16949

    Abstract: ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA
    Text: ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC cont = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ Description C Packaged in the SOT89 outline this new low saturation 12V PNP


    Original     		PDF ZXTP25012EZ -70mV ZXTN25012EZ D-81541 TS16949 ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA

    TS16949

    Abstract: ZXTN25020DZ ZXTP25020DZ ZXTP25020DZTA SOT89 transistor marking 5A
    Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP


    Original     		PDF ZXTP25020DZ -65mV ZXTN25020DZ D-81541 TS16949 ZXTN25020DZ ZXTP25020DZ ZXTP25020DZTA SOT89 transistor marking 5A

    SOT89 transistor marking 851

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.


    Original     		PDF ZXTN2010Z J-STD-020 ZXTP2012Z MIL-STD-202, DS33661 SOT89 transistor marking 851

    ZX5T849Z

    Abstract: ZX5T849ZTA MARKING 7A SOT89
    Text: ZX5T849Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		PDF ZX5T849Z ZX5T849ZTA ZX5T849Z ZX5T849ZTA MARKING 7A SOT89

    ZXTN19020DZTA

    Abstract: TS16949 ZXTN19020DZ ZXTP19020DZ
    Text: ZXTN19020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 7.5A VCE(sat) < 35mV @ 1A RCE(sat) = 21m⍀ PD = 2.4W Complementary part number ZXTP19020DZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		PDF ZXTN19020DZ ZXTP19020DZ D-81541 ZXTN19020DZTA TS16949 ZXTN19020DZ ZXTP19020DZ

    TS16949

    Abstract: ZXTN25040DZ ZXTN25040DZTA ZXTP25040DZ ZXTN
    Text: ZXTN25040DZ 40V, SOT89, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 2.4W Complementary part number ZXTP25040DZ Description C Packaged in the SOT89 outline this new low saturation 40V NPN


    Original     		PDF ZXTN25040DZ ZXTP25040DZ D-81541 TS16949 ZXTN25040DZ ZXTN25040DZTA ZXTP25040DZ ZXTN

    Untitled

    Abstract: No abstract text available
    Text: ZXTN25020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 6A VCE(sat) < 48mV @ 1A RCE(sat) = 30m⍀ PD = 2.4W Complementary part number ZXTP25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V NPN


    Original     		PDF ZXTN25020DZ ZXTP25020DZ D-81541

    Untitled

    Abstract: No abstract text available
    Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management


    Original     		PDF FCX555 -180V FCX555TA FCX555

    transistor marking 6A

    Abstract: ZXTN2010Z ZXTN2010ZTA
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z transistor marking 6A ZXTN2010Z ZXTN2010ZTA

    "PNP Transistor"

    Abstract: design ideas TS16949 ZX5T951Z ZX5T951ZTA
    Text: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		PDF ZX5T951Z "PNP Transistor" design ideas TS16949 ZX5T951Z ZX5T951ZTA

    SOT89 transistor marking 5A

    Abstract: ZX5T951Z ZX5T951ZTA 5A SOT89
    Text: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		PDF ZX5T951Z SOT89 transistor marking 5A ZX5T951Z ZX5T951ZTA 5A SOT89

    Untitled

    Abstract: No abstract text available
    Text: ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various


    Original     		PDF ZXTN2010Z

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FCX1053A 75V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 75V   IC = 3A high Continuous Current   ICM = 10A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound


    Original     		PDF FCX1053A J-STD-020 MIL-STD-202, DS33078

    marking 951

    Abstract: SOT89 transistor marking 5A ZXTP2012Z ZXTP2012ZTA
    Text: ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		PDF ZXTP2012Z Powe26100 marking 951 SOT89 transistor marking 5A ZXTP2012Z ZXTP2012ZTA

    FCX555

    Abstract: FCX555TA 100MHZ TS-4020
    Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management


    Original     		PDF FCX555 -180V FCX555TA FCX555 FCX555TA 100MHZ TS-4020

    FCX1053A

    Abstract: FCX1053ATA 78m marking
    Text: FCX1053A SOT89 NPN medium power transistor Summary BVCEO = 75V RCE sat = 78m⍀ IC = 3A Description This medium power NPN transistor, offered in the SOT89 package provides high current and low saturation voltage making it ideal for use in various driving and power management applications.


    Original     		PDF FCX1053A FCX1053A FCX1053ATA 78m marking

    Untitled

    Abstract: No abstract text available
    Text: ZXTN19020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 7.5A VCE(sat) < 35mV @ 1A RCE(sat) = 21m⍀ PD = 2.4W Complementary part number ZXTP19020DZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		PDF ZXTN19020DZ ZXTP19020DZ D-81541

    ZXTN2007Z

    Abstract: ZXTN2007ZTA sot89 bv
    Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2007Z ZXTN2007ZTA ZXTN2007Z ZXTN2007ZTA sot89 bv