Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT89 HA Search Results

    SOT89 HA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot89 stencil

    Abstract: sot89 land pattern Loctite 218 RG200 substrate 5989-0810EN LOCTITE-96sc Getek LOCTITE 384 RG200 laser gun
    Text: SOT89 Package Application Note 5051 Introduction PCB Land Pattern and Stencil Design Avago Technologies SOT89 is a 3 I/O pins Figure 1 package platform designed to offer excellent heat dissipation and wide RF frequency response. The SOT89 package itself is lead free with a dimension of 4.1 mm


    Original     		PDF 5989-0810EN sot89 stencil sot89 land pattern Loctite 218 RG200 substrate LOCTITE-96sc Getek LOCTITE 384 RG200 laser gun

    Untitled

    Abstract: No abstract text available
    Text: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound


    Original     		PDF BCX5316Q J-STD-020 MIL-STD-202 -500mV DS37033

    MARKING N93

    Abstract: 4446 FCX493 FCX593 fcx493ta
    Text: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.


    Original     		PDF FCX493 FCX593 FCX493TA FCX493TC MAX00 MARKING N93 4446 FCX493 FCX593 fcx493ta

    SOT89 52 10A

    Abstract: design ideas FCX1051A FCX1051ATA FCX1151A TS16949
    Text: FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC cont = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89


    Original     		PDF FCX1051A 120mV FCX1151A FCX1051ATA D-81541 SOT89 52 10A design ideas FCX1051A FCX1051ATA FCX1151A TS16949

    Untitled

    Abstract: No abstract text available
    Text: FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC cont = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89


    Original     		PDF FCX1051A 120mV FCX1151A FCX1051ATA D-81541

    Untitled

    Abstract: No abstract text available
    Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet  Case: SOT89  Low Saturation Voltage VCE sat < -500mV @ -0.5A  Case Material: Molded Plastic, “Green” Molding Compound 


    Original     		PDF BCX51/ -500mV J-STD-020 BCX54, MIL-STD-202 DS35368

    Untitled

    Abstract: No abstract text available
    Text: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.


    Original     		PDF FCX493 FCX593 FCX493TA FCX493TC

    FCX619

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FCX619 50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 50V  Case: SOT89  IC = 3A high Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound


    Original     		PDF FCX619 220mV AEC-Q101 J-STD-020 FCX619 DS33067

    2DB1188P

    Abstract: P23Q
    Text: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V  Case: SOT89   IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A  Case material: Molded Plastic, "Green" Molding Compound.


    Original     		PDF 2DB1188P/Q/R 800mV 2DD1766 AEC-Q101 J-STD-020 MIL-STD-202, DS31144 2DB1188P P23Q

    BCX5216QTA

    Abstract: No abstract text available
    Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • IC = -1A Continuous Collector Currnet  Case: SOT89  Low Saturation Voltage VCE SAT < -500mV @ -0.5A  Case Material: Molded Plastic, “Green” Molding Compound 


    Original     		PDF BCX51/ -500mV J-STD-020 BCX54, MIL-STD-202 DS35368 BCX5216QTA

    Untitled

    Abstract: No abstract text available
    Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current


    Original     		PDF BCX51/ -500mV BCX54, AEC-Q101 DS35368

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state


    Original     		PDF ZXTP2008Z ZX5T949Z

    FCX690BTA

    Abstract: SOT89 MARKING CODE .3B
    Text: A Product Line of Diodes Incorporated Green FCX690B 45V NPN HIGH GAIN POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 45V  Case: SOT89  IC = 2A high Continuous Collector Current  Case material: molded plastic. “Green” molding compound.


    Original     		PDF FCX690B 300mV FCX790A AEC-Q101 J-STD-020 MIL-STD-202, FCX690B DS33070 FCX690BTA SOT89 MARKING CODE .3B

    AM/mcl d01 94V0

    Abstract: No abstract text available
    Text: BCX51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • BVCEO > -45V, -60V & -80V  Case: SOT89  IC = -1A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = -1.5A Peak Pulse Current


    Original     		PDF BCX51/ -500mV J-STD-020 BCX54, MIL-STD-202 DS35368 AM/mcl d01 94V0

    ZXTN19020DZ

    Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
    Text: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor


    Original     		PDF ZXTP19020DZ -47mV ZXTN19020DZ D-81541 ZXTN19020DZ ZXTP19020DZ ZXTP19020DZTA TS16949

    Untitled

    Abstract: No abstract text available
    Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP


    Original     		PDF ZXTP25020DZ -65mV ZXTN25020DZ D-81541

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -40V  Case: SOT89  IC = -5.5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.


    Original     		PDF J-STD-020 -60mV DS33419

    MARKING KN2

    Abstract: No abstract text available
    Text: DXT651 60V NPN LOW VCE sat TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 3A high Continuous Current  Case material: Molded Plastic. “Green” Molding Compound.  Low saturation voltage VCE(sat) < 300mV @ 1A 


    Original     		PDF DXT651 300mV DXT751 AEC-Q101 J-STD-020 MIL-STD-202, DS31184 MARKING KN2

    TS16949

    Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
    Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


    Original     		PDF ZXTN25100DZ 100mV ZXTP25100CZ D-81541 TS16949 ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ

    ZXTN2007Z

    Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
    Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2007Z ZXTN2007ZTA TAP26100 ZXTN2007Z ZXTN2007ZTA ZXTN MARKING 7A SOT89

    ZXTP2014Z

    Abstract: ZXTP2014ZTA
    Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		PDF ZXTP2014Z -140V ZXTP2014ZTA ZXTP2014Z ZXTP2014ZTA

    SOT89 transistor marking 5A

    Abstract: ZXTN2011Z ZXTN2011ZTA
    Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		PDF ZXTN2011Z ZXTN2011ZTA SOT89 transistor marking 5A ZXTN2011Z ZXTN2011ZTA

    Untitled

    Abstract: No abstract text available
    Text: FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management


    Original     		PDF FCX555 -180V FCX555TA FCX555

    Untitled

    Abstract: No abstract text available
    Text: SOT89 W hilst this S.M Package has been available fo r m any years there is a lack o f new specifications being offered in the SOT89 package, by m ost other suppliers. Zetex has addressed this void by in trod ucing a range of high perform ance 1.5 w a tt dissipation SOT89 transistors, offering the com bined benefits o f circuit efficiency and board


    OCR Scan     		PDF