rf sot89 50
Abstract: No abstract text available
Text: MMA500 DC to 6 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.
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MMA500
rf sot89 50
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Aeroflex Microelectronic Solutions
Abstract: rf sot89 50 MMA500
Text: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.
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MMA500
MMA500
A17021
Aeroflex Microelectronic Solutions
rf sot89 50
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mma500
Abstract: 05OUR
Text: MMA500 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance with RoHS compliance.
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MMA500
MMA500
A17021
05OUR
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state
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ZXTP2008Z
ZX5T949Z
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MMA705
Abstract: No abstract text available
Text: MMA705 DC to 4 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA705 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 4 GHz Broadband Gain Block
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MMA705
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MMA704
Abstract: rf sot89
Text: MMA704 DC to 3.7 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA704 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 3.7 GHz Broadband Gain Block
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MMA704
MMA704
rf sot89
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MMA500
Abstract: No abstract text available
Text: MMA500 DC to 6 GHz Amplifier SOT89 OUTLINE Description: Features: The MMA500 is a fully matched amplifier fabricated in Aeroflex / Metelics reliable InGap HBT technology. The economical SOT89 package provides excellent wideband performance. • • • DC - 6 GHz Broadband Gain Block
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MMA500
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ZXTP2008Z
Abstract: ZXTP2008ZTA
Text: ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and
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ZXTP2008Z
ZXTP2008Z
ZXTP2008ZTA
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Untitled
Abstract: No abstract text available
Text: ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZX5T949Z
REE611
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PNP TRANSISTOR SOT89
Abstract: sc 107 transistor SC-62 C1 SOT89 PBSS4250X PBSS5540Z PXTA14 audio power amplifiers with transistors PBSS9110Z PBSS5320X
Text: Semiconductors Date of release: September 2004 Philips’ medium power transistor portfolio in SOT89 SC-62 and SOT223 (SC-73) General features Portfolio overview • Available in the biggest small-signal packages SOT89 (SC-62) and SOT223 (SC-73) • Bridging the gap between DPAK power transistors
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SC-62)
OT223
SC-73)
PNP TRANSISTOR SOT89
sc 107 transistor
SC-62
C1 SOT89
PBSS4250X
PBSS5540Z
PXTA14
audio power amplifiers with transistors
PBSS9110Z
PBSS5320X
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Untitled
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use ZXTP2008ZTA ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state
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ZXTP2008ZTA
ZX5T949Z
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PBSS302NX
Abstract: PBSS301NX PBSS303NX PBSS4250X PBSS4320X PBSS4330X PBSS4350X PBSS4520X PBSS4540X mse267
Text: Ultra low VCEsat BISS transistors in SOT89 (SC-62) 5.3 A continuous collector current in small medium power package Looking to reduce power consumption and create smaller end products? Then look no further than NXP ultra low VCEsat (BISS) transistors in SOT89 (SC-62). Housed in a medium-power package, these
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SC-62)
transistorsinSOT89
3Acontinuousand10
ackagesizeSOT89
PBSS306PX
PBSS302NX
PBSS301NX
PBSS303NX
PBSS4250X
PBSS4320X
PBSS4330X
PBSS4350X
PBSS4520X
PBSS4540X
mse267
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ZX5T949Z
Abstract: ZX5T949ZTA SOT89 transistor marking 5A
Text: ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZX5T949Z
WIDTH11
ZX5T949Z
ZX5T949ZTA
SOT89 transistor marking 5A
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Untitled
Abstract: No abstract text available
Text: ZXTP2008Z 30V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line sw itching and
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Untitled
Abstract: No abstract text available
Text: ECG050 The Communications Edge TM InGaP HBT Gain Block Product Features • DC – 4 GHz • +19 dBm P1dB at 1 GHz • +34 dBm OIP3 at 1 GHz • 19 dB Gain at 1 GHz • 5.5 dB Noise Figure at 2 GHz • Available in SOT-86, SOT89 and lead-free / green SOT89 Package Styles
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ECG050
OT-86,
ECG050
for99
1-800-WJ1-4401
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SOT89 MARKING CODE 944
Abstract: No abstract text available
Text: ECG050 The Communications Edge TM InGaP HBT Gain Block Product Features • DC – 4 GHz • +19 dBm P1dB at 1 GHz • +34 dBm OIP3 at 1 GHz • 19 dB Gain at 1 GHz • 5.5 dB Noise Figure at 2 GHz • Available in SOT-86, SOT89 and lead-free / green SOT89 Package Styles
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ECG050
OT-86,
ECG050
for10
1-800-WJ1-4401
SOT89 MARKING CODE 944
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Untitled
Abstract: No abstract text available
Text: DRAFT RF3315 DRAFT RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features +40dBm Output IP3 12.5dB Gain at 2.0GHz +23dBm P1dB 3.0dB Typical Noise Figure at
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RF3315Broadband
RF3315
300MHz
40dBm
23dBm
DS050318
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Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON PLANAR M ED IU M POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 CO M PLEM ENTARY TYPES BSR41 BSR43 O - BSR43 - BSR33 BSR41 - BSR31 P A R T M A R K IN G D E T A IL - BSR43 - AR4 BSR41 - AR2 B SOT89 ABSOLUTE M A X IM U M RATINGS. PARAM ETER BSR41
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BSR41
BSR43
BSR43
BSR33
BSR31
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BSS89 APPLICATION
Abstract: BST110 bsp106 bsn254 BS-208 BSN20 to92
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs VERTICAL D-MOSFETS OVERVIEW N/P leaded channel TO-92 other PRODUCT DATA: PA G E S 43-45 surface-mount main SOT23 SOT89 SOT223 application
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BSD254
BSN304
BSN10
BST100
BST110
BS250
BSS110
BSS92
BS208
BSP204
BSS89 APPLICATION
bsp106
bsn254
BS-208
BSN20 to92
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ZENER DIODE 15Y
Abstract: Zener diode 16y c5v1 zener diode c30 C30 DIODE ZENER 16y zener C4V7 22y diode C3V9 zener diode 11y
Text: BZV49 SERIES C2V7 - C47 SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage Range Nominal Tolerance Maximum Forward Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range vz
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BZV49
H7Q578
DS135
ZENER DIODE 15Y
Zener diode 16y
c5v1
zener diode c30
C30 DIODE ZENER
16y zener
C4V7
22y diode
C3V9
zener diode 11y
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bzv49
Abstract: c4v3 c8v2 C3939
Text: SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES iSSUE 3 - NO VEM BER 1995 O ABSOLUTE MAXIMUM RATINGS as per Electron Coding Sytemj. PARAMETER SYMBOL Voltage Range V-, N om inal Tolerance C M axim um Forward Current Power Dissipation at Tamb=25'-'C VALUE I 3.9 to 43
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BZV49:
bzv49
c4v3
c8v2
C3939
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Untitled
Abstract: No abstract text available
Text: • bbSB'iai DDESTb? 435 » A P X N AMER PHILIPS/DISCRETE P XT2222/A b?E D ;v SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for switching and linear applications. The complementary type is PXT2907/A.
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XT2222/A
PXT2907/A.
PXT2222
PXT2222A
x10-4
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BF469
Abstract: BF420.423 2N5415
Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors PRODUCT DATA: PAGES 29-31 HIGH-VOLTAGE TRANSISTORS OVERVIEW NPN leaded TO-39 surface-mount TO-92 TO-126 TO-202 SOT23 SOT89 SOT223
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BF420/422
BF483/485/487
MPSA42/43
PN3439/3440
2N5550/5551
BSR19/A
PMBT5550/5551
O-126
BF469
BF471
BF420.423
2N5415
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C5V1
Abstract: C4V7 c24 zener BZV4 BZV49
Text: I SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES ISSUE 3 - NOVEMBER 1995 BZV49 SERIES O_ ' ABSOLUTE MAXIMUM RATINGS as per Electron Coc ing Sytem . PARAMETER SYMBOL Voltage Range Nominal Tolerance Maximum Forward Current Power Dissipation at Tamb=25“C
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BZV49
BZV49:
C5V1
C4V7
c24 zener
BZV4
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