2DB1188P
Abstract: P23Q
Text: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V Case: SOT89 IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A Case material: Molded Plastic, "Green" Molding Compound.
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2DB1188P/Q/R
800mV
2DD1766
AEC-Q101
J-STD-020
MIL-STD-202,
DS31144
2DB1188P
P23Q
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FCX690BTA
Abstract: SOT89 MARKING CODE .3B
Text: A Product Line of Diodes Incorporated Green FCX690B 45V NPN HIGH GAIN POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 45V Case: SOT89 IC = 2A high Continuous Collector Current Case material: molded plastic. “Green” molding compound.
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FCX690B
300mV
FCX790A
AEC-Q101
J-STD-020
MIL-STD-202,
FCX690B
DS33070
FCX690BTA
SOT89 MARKING CODE .3B
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Untitled
Abstract: No abstract text available
Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP
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ZXTP19100CZ
-100V
-130mV
ZXTN19100CZ
ZXTP19100CZTA
D-81541
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Zetex ZXTP19100CZ
Abstract: TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA
Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP
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ZXTP19100CZ
-100V
-130mV
ZXTN19100CZ
ZXTP19100CZTA
D-81541
Zetex ZXTP19100CZ
TS16949
ZXTN19100CZ
ZXTP19100CZ
ZXTP19100CZTA
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FCX491 60V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic. “Green” Molding Compound.
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FCX491
FCX591
AEC-Q101
DS33054
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PNP 200V 2A SOT89
Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
Text: ZXTP03200BZ 200V PNP Low VCE sat transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 130mΩ PD = 2.4W Description Packaged in the SOT89 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state
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ZXTP03200BZ
-200V
-160mV
ZXTP03200BZTA
D-81541
A1103-04,
PNP 200V 2A SOT89
TS16949
ZXTP03200BZ
ZXTP03200BZTA
cont base 28
SOT89 transistor marking 5A
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FCX493A 60V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V • • IC = 1A high Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic. “Green” Molding Compound.
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FCX493A
150mA
AEC-Q101
J-STD-020
MIL-STD-202,
208cknowledge
DS36573
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FCX619
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FCX619 50V NPN LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 50V Case: SOT89 IC = 3A high Continuous Collector Current Case Material: Molded Plastic, “Green” Molding Compound
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FCX619
220mV
AEC-Q101
J-STD-020
FCX619
DS33067
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state
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ZXTP2008Z
ZX5T949Z
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ZXTN19020DZ
Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Text: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor
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ZXTP19020DZ
-47mV
ZXTN19020DZ
D-81541
ZXTN19020DZ
ZXTP19020DZ
ZXTP19020DZTA
TS16949
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Untitled
Abstract: No abstract text available
Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP
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ZXTP25020DZ
-65mV
ZXTN25020DZ
D-81541
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -40V Case: SOT89 IC = -5.5A High Continuous Current Case Material: Molded Plastic. “Green” Molding Compound.
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J-STD-020
-60mV
DS33419
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MARKING KN2
Abstract: No abstract text available
Text: DXT651 60V NPN LOW VCE sat TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V Case: SOT89 IC = 3A high Continuous Current Case material: Molded Plastic. “Green” Molding Compound. Low saturation voltage VCE(sat) < 300mV @ 1A
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DXT651
300mV
DXT751
AEC-Q101
J-STD-020
MIL-STD-202,
DS31184
MARKING KN2
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ZXTN2007Z
Abstract: ZXTN2007ZTA ZXTN MARKING 7A SOT89
Text: ZXTN2007Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2007Z
ZXTN2007ZTA
TAP26100
ZXTN2007Z
ZXTN2007ZTA
ZXTN
MARKING 7A SOT89
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Untitled
Abstract: No abstract text available
Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2011Z
ZXTN2011ZTA
ZXTN20miconductors
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ZXTN19060CZ
Abstract: TS16949 ZXTP19060CZ ZXTP19060CZTA
Text: ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BVCEO > -60V BVECO > -7V IC cont = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 2.4W Complementary part number ZXTN19060CZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor
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ZXTP19060CZ
-80mV
ZXTN19060CZ
ZXTP19060CZTA
D-81541
ZXTN19060CZ
TS16949
ZXTP19060CZ
ZXTP19060CZTA
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TS16949
Abstract: ZXTN25012EZ ZXTP25012EZ ZXTP25012EZTA
Text: ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC cont = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ Description C Packaged in the SOT89 outline this new low saturation 12V PNP
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ZXTP25012EZ
-70mV
ZXTN25012EZ
D-81541
TS16949
ZXTN25012EZ
ZXTP25012EZ
ZXTP25012EZTA
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TS16949
Abstract: ZXTN25020DZ ZXTP25020DZ ZXTP25020DZTA SOT89 transistor marking 5A
Text: ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 5A VCE(sat) < -65mV @ -1A RCE(sat) = 39m⍀ PD = 2.4W Complementary part number ZXTN25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V PNP
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ZXTP25020DZ
-65mV
ZXTN25020DZ
D-81541
TS16949
ZXTN25020DZ
ZXTP25020DZ
ZXTP25020DZTA
SOT89 transistor marking 5A
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SOT89 transistor marking 851
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V Case: SOT89 IC = 5A High Continuous Current Case Material: Molded Plastic. “Green” Molding Compound.
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ZXTN2010Z
J-STD-020
ZXTP2012Z
MIL-STD-202,
DS33661
SOT89 transistor marking 851
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ZX5T849Z
Abstract: ZX5T849ZTA MARKING 7A SOT89
Text: ZX5T849Z 30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 30V : RSAT = 23m ; IC = 6.0A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T849Z
ZX5T849ZTA
ZX5T849Z
ZX5T849ZTA
MARKING 7A SOT89
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ZXTN19020DZTA
Abstract: TS16949 ZXTN19020DZ ZXTP19020DZ
Text: ZXTN19020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 7.5A VCE(sat) < 35mV @ 1A RCE(sat) = 21m⍀ PD = 2.4W Complementary part number ZXTP19020DZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor
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ZXTN19020DZ
ZXTP19020DZ
D-81541
ZXTN19020DZTA
TS16949
ZXTN19020DZ
ZXTP19020DZ
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ZXTP2013Z
Abstract: ZXTP2013ZTA
Text: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line
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ZXTP2013Z
-100V
ZXTP2013ZTA
ZXTP2013Z
ZXTP2013ZTA
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TS16949
Abstract: ZXTN25040DZ ZXTN25040DZTA ZXTP25040DZ ZXTN
Text: ZXTN25040DZ 40V, SOT89, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 2.4W Complementary part number ZXTP25040DZ Description C Packaged in the SOT89 outline this new low saturation 40V NPN
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ZXTN25040DZ
ZXTP25040DZ
D-81541
TS16949
ZXTN25040DZ
ZXTN25040DZTA
ZXTP25040DZ
ZXTN
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Untitled
Abstract: No abstract text available
Text: ZXTN25020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 6A VCE(sat) < 48mV @ 1A RCE(sat) = 30m⍀ PD = 2.4W Complementary part number ZXTP25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V NPN
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ZXTN25020DZ
ZXTP25020DZ
D-81541
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