C 245 B
Abstract: diode u2 40 sot437a philips 648
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT437A D A F 3 D1 U1 B q C c 1 H U2 E E1 A w1 M A M B M p 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT437A
C 245 B
diode u2 40
sot437a
philips 648
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Untitled
Abstract: No abstract text available
Text: Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT437A D A F 3 D1 U1 B q C c 1 H U2 E E1 A w1 M A M B M p 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c D D1 E E1
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OT437A
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MGS956
Abstract: TRansistor CQ 648
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040XL UHF power transistor Product specification 1999 Dec 06 Philips Semiconductors Product specification UHF power transistor LLE18040XL FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature
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M3D159
LLE18040XL
OT437A
LLE18040XL
125002/01/pp12
MGS956
TRansistor CQ 648
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BLV2044
Abstract: chip die npn transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV2044 UHF power transistor Product specification Supersedes data of 1996 Feb 09 1996 Nov 14 Philips Semiconductors Product specification UHF power transistor BLV2044 FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature
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BLV2044
OT437A
SCA52
127061/1200/02/pp12
BLV2044
chip die npn transistor
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philips ferrite 4330-030
Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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M3D159
LLE18010X
SCA63
125002/00/02/pp12
philips ferrite 4330-030
philips ferrite 4b1
TRansistor 648
BY239
BDT91
LLE18010X
j160 capacitor philips
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SMD DIODE gp 817
Abstract: smd resistor philips 1206 smd capacitor philips transistor SMD DK philips ceramic capacitors smd SMD Transistor 6f philips smd 1206 resistor SMD TRANSISTOR L6 philips smd 1206 BEP SMD ZENER
Text: APPLICATION NOTE 15 W class-AB amplifier with the BLV2044 for 1930 − 1990 MHz PCS AN98022 Philips Semiconductors 15 W class-AB amplifier with the BLV2044 for 1930 − 1990 MHz (PCS) CONTENTS 1 INTRODUCTION 2 CIRCUIT DESCRIPTION 3 DC BIAS CIRCUIT 4 RF MEASUREMENT RESULTS
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BLV2044
AN98022
BLV2044,
OT437
SCA57
SMD DIODE gp 817
smd resistor philips 1206
smd capacitor philips
transistor SMD DK
philips ceramic capacitors smd
SMD Transistor 6f
philips smd 1206 resistor
SMD TRANSISTOR L6
philips smd 1206
BEP SMD ZENER
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865 RF transistor
Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
Text: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm
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SC19a
OT96-1
OT502A
865 RF transistor
RF Transistor reference
"RF Power Modules"
microwave transistor 03
Power Transistor
MS-012AA
SOT391A
EU2A
sot147a
1117 sot223
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TRANSISTOR SMD MARKING CODE NM
Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is
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MC3403
2N2219
1N4148
MBC775
TRANSISTOR SMD MARKING CODE NM
philips capacitor part numbering system
SOT123 transistor marking 04
smd-transistor DATA BOOK
TRANSISTOR SMD MARKING CODE KF
TRANSISTOR SMD MARKING CODE wps
DIODE marking EG 83A
2N2219 JANTX
sot391
small signal transistor marking codes
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BDT91
Abstract: BY239 LLE15370X
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE15370X NPN microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LLE15370X
SCA53
127147/00/02/pp12
BDT91
BY239
LLE15370X
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transistor oc 76
Abstract: PLB16012U Erie Electronics LTD C 829 transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET PLB16012U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input matching cell allows an easier
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PLB16012U
SCA53
127147/00/02/pp12
transistor oc 76
PLB16012U
Erie Electronics LTD
C 829 transistor
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SOT333
Abstract: SOT423 sot468 thermal compound wps II TO metal package aluminum kovar SOT439 Transistor Packages sot262 SOT443 rf transistor smd pages
Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 4 RF and microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages of electronic devices are, in general, designed to: metal cap – Protect the electronics from mechanical damage
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sot333
Abstract: sot390
Text: Philips Semiconductors General QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by: Philips Semiconductors is a Quality Company, renowned
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QS9000
sot333
sot390
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LLE16350X
Abstract: BDT91 BY239
Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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LLE16350X
SCA53
127121/00/04/pp12
LLE16350X
BDT91
BY239
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SMD Transistor G6
Abstract: BLV2044 SMD ic catalogue
Text: Philips Semiconductors Product specification UHF power transistor BLV2044 FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching to achieve high
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BLV2044
OT437A
SMD Transistor G6
BLV2044
SMD ic catalogue
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transistor ZA 16
Abstract: PLB16030U SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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PLB16030U
OT437A
OT437A.
transistor ZA 16
PLB16030U
SC15
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diode BY239
Abstract: bd239 equivalent BD750 Transistor Equivalent list BD 750 PERMITTIVITY* 2.55
Text: Philips Sem iconductors Product specification NPN m icrow ave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency
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LLE16045X
diode BY239
bd239 equivalent
BD750
Transistor Equivalent list
BD 750
PERMITTIVITY* 2.55
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NF4-5V
Abstract: capacitor feed-through ERIE ceramic capacitor
Text: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCEDATA . input matching cell allows an easier design of circuits Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.
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OT437A
AT-3-7-271SL
PLB16012U
NF4-5V
capacitor feed-through
ERIE ceramic capacitor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Microwave power transistor PLB16004U FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR Microwave performance up to T mb = 25 °C in a common base class C
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PLB16004U
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Transistor AND DIODE Equivalent list
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very
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BDT85
BY239800
BY239800;
LLE16120X
Transistor AND DIODE Equivalent list
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erie feedthrough capacitors
Abstract: PLB16012U SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCE DATA • Input matching cell allows an easier design of circuits Microwave performance up to T mb = 25 °C in a common base class C • Diffused emitter ballasting resistors
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PLB16012U
OT437A
OT437A.
erie feedthrough capacitors
PLB16012U
SC15
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BY239-800
Abstract: MGA247 BDT85 LLE16120X SC15 resistor 3.3 k Class D Amplifier Circuit
Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16120X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides
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LLE16120X
OT437A.
BY239-800
MGA247
BDT85
LLE16120X
SC15
resistor 3.3 k
Class D Amplifier Circuit
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PLB16004U
Abstract: SC15
Text: Philips Semiconductors Product specification Microwave power transistor PLB16004U FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR Microwave performance up to T mb = 25 °C in a common base class C
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PLB16004U
OT437A
OT437A.
PLB16004U
SC15
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by239
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor LLE16350X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB
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LLE16350X
by239
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j78 transistor
Abstract: j78 transistor equivalent
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very
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LLE15180X
j78 transistor
j78 transistor equivalent
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