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    SOT363 ON MARKING DS Search Results

    SOT363 ON MARKING DS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AV-THLIN2BNCM-025 Amphenol Cables on Demand Amphenol AV-THLIN2BNCM-025 Thin-line Coaxial Cable - BNC Male / BNC Male (SDI Compatible) 25ft Datasheet
    CN-DSUB50PIN0-000 Amphenol Cables on Demand Amphenol CN-DSUB50PIN0-000 D-Subminiature (DB50 Male D-Sub) Connector, 50-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CN-DSUBHD62PN-000 Amphenol Cables on Demand Amphenol CN-DSUBHD62PN-000 High-Density D-Subminiature (HD62 Male D-Sub) Connector, 62-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CO-058BNCX200-003 Amphenol Cables on Demand Amphenol CO-058BNCX200-003 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-058BNCX200-050 Amphenol Cables on Demand Amphenol CO-058BNCX200-050 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 50ft Datasheet

    SOT363 ON MARKING DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF 2N7002DWA OT363 AEC-Q101 DS36120

    k72 diode

    Abstract: No abstract text available
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C • Dual N-Channel MOSFET • Low On-Resistance 60V 7.5Ω @ VGS = 5V 0.23A • Low Gate Threshold Voltage • Low Input Capacitance Description


    Original     		PDF 2N7002DW DS30120 k72 diode

    Untitled

    Abstract: No abstract text available
    Text: BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original     		PDF BSS84DW -130mA AEC-Q101 OT363 DS30204

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DWA Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V 6Ω @ VGS = 10V SOT363 • • • • • • • • • • ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the


    Original     		PDF 2N7002DWA OT363 170mA 200mA AEC-Q101 DS36120

    diode K72

    Abstract: K72 marking diode k72 diode
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Description This MOSFET has been designed to minimize the on-state resistance


    Original     		PDF 2N7002DW AEC-Q101 DS30120 diode K72 K72 marking diode k72 diode

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching


    Original     		PDF 2N7002DWA OT363 170mA 200mA AEC-Q101 DS36120

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching


    Original     		PDF 2N7002DWA OT363 AEC-Q101 DS36120

    Untitled

    Abstract: No abstract text available
    Text: BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) max -50V 10 @ VGS = -5V ID TA = +25°C -130mA • Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed Description


    Original     		PDF BSS84DW -130mA AEC-Q101 OT363 DS30204

    Untitled

    Abstract: No abstract text available
    Text: BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V BR DSS RDS(on) max Q1 Q2 60V -50V 13.5Ω @ VGS = 10V 10Ω @ VGS = -5V ID TA = +25°C 115mA -130mA Description This MOSFET has been designed to minimize the on-state resistance


    Original     		PDF BSS8402DW 115mA -130mA DS30380

    Untitled

    Abstract: No abstract text available
    Text: BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V BR DSS RDS(on) max Q1 Q2 60V -50V 13.5Ω @ VGS = 10V 10Ω @ VGS = -5V ID TA = +25°C 115mA -130mA Description This MOSFET has been designed to minimize the on-state resistance


    Original     		PDF BSS8402DW 115mA -130mA DS30380

    Untitled

    Abstract: No abstract text available
    Text: DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS RDS(ON) 60V 6Ω @ VGS = 5V 5Ω @ VGS = 10V Features and Benefits ID TA = +25°C 90mA 115mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF DMN66D0LDW OT363 AEC-Q101 DS31232

    marking 32 SOT-363

    Abstract: sot-363 Marking G1 NTJD4001NT1G marking 82 sot363 MARKING TE SOT363 419B-02 NTJD4001N NTJD4001NT1 NTJD4001NT2G TE SC88
    Text: NTJD4001N Small Signal MOSFET 30 V, 250 mA, Dual N-Channel, SC-88 Features •ăLow Gate Charge for Fast Switching •ăSmall Footprint - 30% Smaller than TSOP-6 •ăESD Protected Gate •ăPb-Free Package is Available V BR DSS RDS(on) TYP ID Max 1.0 W @ 4.0 V


    Original     		PDF NTJD4001N SC-88 OT-363 NTJD4001N/D marking 32 SOT-363 sot-363 Marking G1 NTJD4001NT1G marking 82 sot363 MARKING TE SOT363 419B-02 NTJD4001N NTJD4001NT1 NTJD4001NT2G TE SC88

    Untitled

    Abstract: No abstract text available
    Text: BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V BR DSS RDS(on) max Q1 Q2 60V -50V 13.5 @ VGS = 10V 10 @ VGS = -5V ID TA = 25°C 115mA -130mA Description This MOSFET has been designed to minimize the on-state resistance


    Original     		PDF BSS8402DW 115mA -130mA AEC-Q101 DS30380

    k72 diode

    Abstract: mosfet k72 K72 marking diode DS30120 Rev. 14
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage


    Original     		PDF 2N7002DW AEC-Q101 DS30120 k72 diode mosfet k72 K72 marking diode DS30120 Rev. 14

    Untitled

    Abstract: No abstract text available
    Text: DMG6301UDW 25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features V BR DSS RDS(ON) 25V 4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V ID TA = +25°C 0.24A 0.22A Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF DMG6301UDW DS36288

    Untitled

    Abstract: No abstract text available
    Text: DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) max 20V 0.55Ω @ VGS = 4.5V ID TA = +25°C 540mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it ideal for high efficiency power management


    Original     		PDF DMN2004DWK AEC-Q101 DS30935

    Untitled

    Abstract: No abstract text available
    Text: DMP2004DWK DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 20V 0.55Ω @ VGS = 4.5V ID TA = +25°C 540mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance, making it


    Original     		PDF DMP2004DWK 540mA AEC-Q101 DS30940

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the


    Original     		PDF DMN65D8LDW 170mA OT363 200mA DS35500

    DMN33D8L

    Abstract: No abstract text available
    Text: DMN33D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION V BR DSS Features and Benefits ID max TA = +25°C RDS(ON) max 3Ω @ VGS = 4.5V 5Ω @ VGS = 4.0V 7Ω @ VGS = 2.5V 30V 250 mA 200 mA 100 mA Description


    Original     		PDF DMN33D8LDW AEC-Q101 DS36754 DMN33D8L

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF DMN65D8LDW OT363 170mA 200mA DS35500

    Untitled

    Abstract: No abstract text available
    Text: DMN33D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION V BR DSS Features and Benefits ID max TA = +25°C RDS(ON) max 3Ω @ VGS = 4.5V 5Ω @ VGS = 4.0V 7Ω @ VGS = 2.5V 30V 250 mA 200 mA 100 mA Description


    Original     		PDF DMN33D8LDW AEC-Q101 DS36754

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V 6Ω @ VGS = 10V •          ID TA = +25°C 170mA SOT363 200mA Description This new generation MOSFET has been designed to minimize the


    Original     		PDF DMN65D8LDW 170mA OT363 200mA DS35500

    Untitled

    Abstract: No abstract text available
    Text: DMN3190LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION V BR DSS Features and Benefits Package RDS(ON) (MAX) 190mΩ @ VGS = 10V 30V 335mΩ @ VGS = 4.5V ID (MAX) TA = +25°C • Low On-Resistance  Low Input Capacitance


    Original     		PDF DMN3190LDW AEC-Q101 OT363 DS36192

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the


    Original     		PDF DMN65D8LDW OT363 170mA 200mA AEC-Q101 DS35500