SOT363 MARKING CODE 7M
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5211DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These
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LMUN5211DW1T1G
LMUN5211DW1T1
SOT363 MARKING CODE 7M
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MUN5111DW1T1
Abstract: MUN5111DW1T1G MUN5112DW1T1 MUN5112DW1T1G MUN5113DW1T1 MUN5113DW1T1G MUN5114DW1T1 marking 52 sot-363 SOT 363 marking 67 MARKING 67 SOT-363
Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor
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MUN5111DW1T1
MUN5111DW1T1/D
MUN5111DW1T1G
MUN5112DW1T1
MUN5112DW1T1G
MUN5113DW1T1
MUN5113DW1T1G
MUN5114DW1T1
marking 52 sot-363
SOT 363 marking 67
MARKING 67 SOT-363
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CMKD4448
Abstract: No abstract text available
Text: CMKD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar
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CMKD4448
OT-363
100mA
13-January
CMKD4448
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sot363 marking code 385
Abstract: CMKD4448 MARKING CODE 21
Text: Central CMKD4448 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES TM SOT-363 CASE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial
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CMKD4448
OT-363
CMKD4448
100mA
21-November
sot363 marking code 385
MARKING CODE 21
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CMKD4448
Abstract: R3 marking code MARKING R3 sot363 marking code 385 marking code D3 SOT363 sot-363 MARKING
Text: CMKD4448 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-363 CASE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the
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CMKD4448
OT-363
100mA
CMKD4448
R3 marking code
MARKING R3
sot363 marking code 385
marking code D3 SOT363
sot-363 MARKING
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Untitled
Abstract: No abstract text available
Text: STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching
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STN6303
STN6303
OT-363
SC70-6L
400m-ohm
550m-ohm
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Untitled
Abstract: No abstract text available
Text: PJ3L85 DATA BUS TERMINATOR / 3-PHASE, FULL WAVE BRIDGE This highly integrated device is designed as rail to rail overvoltage protection clamp for up to 3 data lines. It is also ideal as a three-phase, full wave bridge. PanJit's PJ3L85 is ideal in portable applications where small
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PJ3L85
PJ3L85
OT-363
OT-363
MIL-883
IEC-61000-4-2
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SC70-6L
Abstract: marking 52 sot363 sot363 marking code 385 SOT-363 mosfet marking s1 sot363 marking 52 sot-363 mosfet 400 V 10A Dual N sot363 marking code ca MARKING CODE ca sot363
Text: STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching
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STN6303
STN6303
OT-363
SC70-6L
400m-ohm
550m-ohm
SC70-6L
marking 52 sot363
sot363 marking code 385
SOT-363 mosfet
marking s1 sot363
marking 52 sot-363
mosfet 400 V 10A
Dual N
sot363 marking code ca
MARKING CODE ca sot363
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Dual N-Channel mosfet sot-363
Abstract: diode 66a SSN1902 sot-363 n-channel mosfet 66a Diodes Dual N-Channel MOSFET
Text: SSN1902 Dual N-Channel Enhancement Mode MOSFET Product Summary SOT-363 6 RDS ON (mΩ) Max ID (A) 4 YW 385 @VGS = 4.5V 1 0.7A 20V 5 19 VDS (V) 2 630 @VGS = 2.5V 3 D1 (6) D2 (3) FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable.
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SSN1902
OT-363
OT-363
Code19
Dual N-Channel mosfet sot-363
diode 66a
SSN1902
sot-363 n-channel mosfet
66a Diodes
Dual N-Channel MOSFET
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Untitled
Abstract: No abstract text available
Text: PJ3L85 DATA BUS TERMINATOR / 3-PHASE, FULL WAVE BRIDGE This highly integrated device is designed as rail to rail overvoltage protection clamp for up to 3 data lines. It is also ideal as a three-phase, full wave bridge. PanJit's PJ3L85 is ideal in portable applications where small
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PJ3L85
PJ3L85
OT-363
OT-363
MIL-883
IEC-61000-4-2
IEC61249
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
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Untitled
Abstract: No abstract text available
Text: PJ3L85 DATA BUS TERMINATOR / 3-PHASE, FULL WAVE BRIDGE This highly integrated device is designed as rail to rail overvoltage protection clamp for up to 3 data lines. It is also ideal as a three-phase, full wave bridge. PanJit's PJ3L85 is ideal in portable applications where small
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PJ3L85
PJ3L85
OT-363
OT-363
MIL-883
IEC-61000-4-2
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network
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LMUN5311DW1T1G
LMUN5311DW1T1G
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419B-02
Abstract: NSB4904DW1T1G NSB4904DW1T2G RESISTOR footprint
Text: NSB4904DW1T1G, NSB4904DW1T2G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 6 The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSB4904DW1T1G,
NSB4904DW1T2G
NSB4904DW1T1G
NSB4904DW1T2G,
SC-88/SOT-363
NSB4904DW1T1G/D
419B-02
NSB4904DW1T2G
RESISTOR footprint
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PJ3L85
Abstract: No abstract text available
Text: PJ3L85 DATA BUS TERMINATOR / 3-PHASE, FULL WAVE BRIDGE This highly integrated device is designed as rail to rail overvoltage protection clamp for up to 3 data lines. It is also ideal as a three-phase, full wave bridge. PanJit's PJ3L85 is ideal in portable applications where small
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PJ3L85
PJ3L85
OT-363
OT-363
T/R13
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PJ3L85
Abstract: IEC-61000-4-2 MIL-883
Text: PJ3L85 DATA BUS TERMINATOR / 3-PHASE, FULL WAVE BRIDGE This highly integrated device is designed as rail to rail overvoltage protection clamp for up to 3 data lines. It is also ideal as a three-phase, full wave bridge. PanJit's PJ3L85 is ideal in portable applications where small
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PJ3L85
PJ3L85
OT-363
OT-363
MIL-883
IEC-61000-4-2
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These
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LMUN5111DW1T1G
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zener n20
Abstract: dual diode N20
Text: NTJD4401NT1 Product Preview Power MOSFET 20 V Dual, N-Channel, Gate Zener, SC-88 This N-Channel dual device was designed with a small footprint package 2 X 2 mm with ON Semiconductor’s leading planar process for small footprint and increased circuit efficiency. The low figure of
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NTJD4401NT1
SC-88
NTJD4401NT1/D
zener n20
dual diode N20
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Untitled
Abstract: No abstract text available
Text: NTJD4101CT1 Product Preview Power MOSFET 20 V / 8.0 V Dual Complementary, SC-88 This complementary dual device was designed with a small package 2 X 2 mm and low RDS(on) MOSFETs for minimum footprint and increased circuit efficiency. The low RDS(on) performance is
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NTJD4101CT1
SC-88
NTJD4101CT1/D
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3bs02
Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather
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Infineo866-95
B152-H8926-G2-X-7600
NB08-1069
3bs02
2bs01
08P06P
TDA 16888
ICE2pcs02
tda16846
ICE3B1565J
mosfet 18p06p
TDA4605
ICE3B0365J
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common emitter amplifier
Abstract: common collector amplifier circuit designing general purpose complementary transistors high voltage pnp npn transistors,pnp transistors 187 transistor npn 208 SOT-363 common base amplifier circuit common emitter amplifier circuit designing NPN/TRANSISTOR 187
Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features •ăHigh Voltage and High Current: VCEO = 50 V, IC = 200 mA •ăHigh hFE: hFE = 200X400 •ăMoisture Sensitivity Level: 1 •ăESD Rating - Human Body Model: 3A
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200X400
common emitter amplifier
common collector amplifier circuit designing
general purpose complementary transistors
high voltage pnp
npn transistors,pnp transistors
187 transistor npn
208 SOT-363
common base amplifier circuit
common emitter amplifier circuit designing
NPN/TRANSISTOR 187
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MARKING 46 SOT-363
Abstract: No abstract text available
Text: NTJD4401N Small Signal MOSFET 20 V, Dual N−Channel, SC−88 ESD Protection Features • • • • • http://onsemi.com Small Footprint 2 x 2 mm Low Gate Charge N−Channel Device ESD Protected Gate Same Package as SC−70 (6 Leads) Pb−Free Packages are Available
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NTJD4401N
SC-88
SC-70
SC-88
OT-363)
NTJD4401N/D
MARKING 46 SOT-363
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PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly
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lead519
B152-H9345-G2-X-7600
PX3544
PX7510
PX3560
ICE2AS01 equivalent
PX3540
Primarion PX3540
ice3br0665j
PRIMARION px3560
ice3br4765
ICE3BR1765J
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Untitled
Abstract: No abstract text available
Text: Central" CMKD4448 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in an
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CMKD4448
CPD63
OT-363
OT-363
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