RF Wideband Transistors
Abstract: No abstract text available
Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .
|
Original
|
OT54variant
OT122A
OT143B
OT143R
OT172A1
OT172A2
OT223
OT323
OT343N
OT343R
RF Wideband Transistors
|
PDF
|
10939
Abstract: PMGD8000LN
Text: PMGD8000LN Dual µTrenchMOS logic level FET Rev. 01 — 27 February 2003 MBD128 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMGD8000LN in SOT363 SC-88 .
|
Original
|
PMGD8000LN
MBD128
PMGD8000LN
OT363
SC-88)
10939
|
PDF
|
MSD901
Abstract: 10939
Text: PMGD8000LN Dual µTrenchMOS logic level FET Rev. 01 — 27 February 2003 MBD128 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMGD8000LN in SOT363 SC-88 .
|
Original
|
PMGD8000LN
MBD128
PMGD8000LN
OT363
SC-88)
MSA370
771-PMGD8000LN-T/R
MSD901
10939
|
PDF
|
RF Wideband Transistors
Abstract: MS-012AA
Text: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .
|
Original
|
OT96-1
OT122A
OT122D
OT122E
OT143B
OT143R
OT172A1
OT172A2
OT223
OT323
RF Wideband Transistors
MS-012AA
|
PDF
|
NPN CD100 transistor
Abstract: smd transistor a68 NPN CD100 transistor file B80 smd diode Schottky Diode SC-62 octal MOSFET ARRAY smd transistor bq automotive mosfet SOT363 flash N-Channel Microcontrollers
Text: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 2 ISSUE 3 Semiconductors AUGUST 2003 Discretes Logic Microcontrollers Standard Analog In this issue: 1. PMGD8000LN 20 V, 30 V and 60 V N-channel MOSFETs in SOT323 and SOT363 2. PBSS4350X, PBSS5350X, PBSS4250X
|
Original
|
PMGD8000LN
OT323
OT363
PBSS4350X,
PBSS5350X,
PBSS4250X
PBSS5250X
SC-62
PMEG1020EV
PMEG1020EA
NPN CD100 transistor
smd transistor a68
NPN CD100 transistor file
B80 smd diode
Schottky Diode SC-62
octal MOSFET ARRAY
smd transistor bq
automotive mosfet
SOT363 flash
N-Channel Microcontrollers
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PMGD8000LN Dual µTrenchMOS logic level FET Rev. 01 — 27 February 2003 MBD128 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMGD8000LN in SOT363 SC-88 .
|
Original
|
PMGD8000LN
MBD128
PMGD8000LN
OT363
SC-88)
MSA370
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
|
Original
|
PMGD290UCEA
OT363
AEC-Q101
|
PDF
|
TSSOP-6
Abstract: marking 34 TSSOP6 NXP smd marking Yd
Text: PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 18 April 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
|
Original
|
PMGD290UCEA
OT363
AEC-Q101
TSSOP-6
marking 34 TSSOP6 NXP
smd marking Yd
|
PDF
|
philips power mosfet
Abstract: km 1667 BF1204
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification 2000 Nov 13 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1204
613512/01/pp12
philips power mosfet
km 1667
|
PDF
|
MOSFET 4466
Abstract: 4466 8 pin mosfet pin voltage dual sot363 BF1102 mosfet 1412 dual gate mosfet MGS365 marking code AL mosfet handbook
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specification 1999 Jul 08 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1102
OT363
125004/00/01/pp12
MOSFET 4466
4466 8 pin mosfet pin voltage
dual sot363
BF1102
mosfet 1412
dual gate mosfet
MGS365
marking code AL
mosfet handbook
|
PDF
|
BF1203
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Preliminary specification 2000 May 29 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1203
125004/00/01/pp8
|
PDF
|
nxp pmgd780sn
Abstract: PMGD780SN
Text: PMGD780SN Dual N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
|
Original
|
PMGD780SN
OT363
SC-88)
PMGD780SN
nxp pmgd780sn
|
PDF
|
mosfet SMD MARKING CODE 352
Abstract: No abstract text available
Text: PMGD130UN 20 V, dual N-channel Trench MOSFET Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
|
Original
|
PMGD130UN
OT363
mosfet SMD MARKING CODE 352
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
|
Original
|
NX3020NAKS
OT363
SC-88)
|
PDF
|
|
|
BSS84AKS
Abstract: TSSOP-6 BSS84AK
Text: TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) package using Trench MOSFET technology.
|
Original
|
BSS84AKS
OT363
SC-88)
AEC-Q101
BSS84AKS
TSSOP-6
BSS84AK
|
PDF
|
MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: 2N7002PS m8 smd transistor g1 TRANSISTOR SMD MARKING CODE smd transistor marking A1 transistor smd marking A1 NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING A1
Text: 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
|
Original
|
2N7002PS
OT363
SC-88)
AEC-Q101
MOSFET TRANSISTOR SMD MARKING CODE A1
2N7002PS
m8 smd transistor
g1 TRANSISTOR SMD MARKING CODE
smd transistor marking A1
transistor smd marking A1
NXP SMD mosfet MARKING CODE
MOSFET TRANSISTOR SMD MARKING A1
|
PDF
|
DIODE smd marking pl
Abstract: mosfet SMD MARKING CODE 352
Text: PMGD175XN 30 V, dual N-channel Trench MOSFET Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
|
Original
|
PMGD175XN
OT363
DIODE smd marking pl
mosfet SMD MARKING CODE 352
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
|
Original
|
NX3020NAKS
OT363
SC-88)
|
PDF
|
MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: g1 TRANSISTOR SMD MARKING CODE DIODE smd marking CODE NZ NXP SMD TRANSISTOR MARKING CODE s1 BSS138PS NXP SMD mosfet MARKING CODE transistor SMD MARKING CODE nz MOSFET TRANSISTOR SMD MARKING CODE 11 smd code marking Nz smd transistor marking A1
Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
|
Original
|
BSS138PS
OT363
SC-88)
AEC-Q101
MOSFET TRANSISTOR SMD MARKING CODE A1
g1 TRANSISTOR SMD MARKING CODE
DIODE smd marking CODE NZ
NXP SMD TRANSISTOR MARKING CODE s1
BSS138PS
NXP SMD mosfet MARKING CODE
transistor SMD MARKING CODE nz
MOSFET TRANSISTOR SMD MARKING CODE 11
smd code marking Nz
smd transistor marking A1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
|
Original
|
BSS138BKS
OT363
SC-88)
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
|
Original
|
BSS138PS
OT363
SC-88)
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
|
Original
|
BSS138BKS
OT363
SC-88)
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching
|
Original
|
2N7002DWA
OT363
170mA
200mA
AEC-Q101
DS36120
|
PDF
|
sot363 aaa
Abstract: BSS13
Text: BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
|
Original
|
BSS138BKS
OT363
SC-88)
AEC-Q101
771-BSS138BKS115
BSS138BKS
sot363 aaa
BSS13
|
PDF
|