Untitled
Abstract: No abstract text available
Text: BB503C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0834-0500 Previous ADE-208-812C Rev.5.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz
|
Original
|
PDF
|
BB503C
REJ03G0834-0500
ADE-208-812C)
200pF,
OT-343mod)
PTSP0004ZA-A
BB503C
|
1SV70
Abstract: BIC702C
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
|
1SV70
Abstract: BB305C
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
|
diode MARKING CODE 917
Abstract: 1SV70 BIC703C DSA003645
Text: BIC703C Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-985D Z 5th. Edition Mar. 2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)
|
Original
|
PDF
|
BIC703C
ADE-208-985D
200pF,
OT-343mod)
BIC703C
diode MARKING CODE 917
1SV70
DSA003645
|
ADE-208-505A
Abstract: BB101C DSA003642
Text: BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505A Z 2nd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD;
|
Original
|
PDF
|
BB101C
ADE-208-505A
200pF,
OT-343mod)
BB101C
ADE-208-505A
DSA003642
|
diode MARKING CODE 917
Abstract: marking code g1s 1SV70 BB504C DSA003645
Text: BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier ADE-208-983D Z 5th. Edition Dec. 2000 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz
|
Original
|
PDF
|
BB504C
ADE-208-983D
OT-343mod)
BB504C
diode MARKING CODE 917
marking code g1s
1SV70
DSA003645
|
BB502C
Abstract: C5 MARKING CODE SOT 247 rfc bb 204
Text: BB502C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0832-0600 Previous ADE-208-810C Rev.6.00 Apr 27, 2006 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz
|
Original
|
PDF
|
BB502C
REJ03G0832-0600
ADE-208-810C)
200pF,
OT-343mod)
PTSP0004ZA-A
BB502C
C5 MARKING CODE SOT 247
rfc bb 204
|
Hitachi DSA002743
Abstract: No abstract text available
Text: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-606C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;
|
Original
|
PDF
|
BB304C
ADE-208-606C
200pF,
OT-343mod)
BB304C
Hitachi DSA002743
|
BB101C
Abstract: No abstract text available
Text: BB101C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0821-0300 Previous ADE-208-505A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
|
Original
|
PDF
|
BB101C
REJ03G0821-0300
ADE-208-505A)
200pF,
OT-343mod)
PTSP0004ZA-A
BB101C
|
BB504CDS-TL-E
Abstract: BB504CDS 1SV70 BB504C
Text: BB504C Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier REJ03G0836-0600 Previous ADE-208-983D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz
|
Original
|
PDF
|
BB504C
REJ03G0836-0600
ADE-208-983D)
OT-343mod)
PTSP0004ZA-A
BB504C
BB504CDS-TL-E
BB504CDS
1SV70
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB505C R07DS0287EJ0200 Previous: REJ03G0364-0100 Rev.2.00 Mar 28, 2011 Build in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.5 dB typ. at f = 900 MHz
|
Original
|
PDF
|
BB505C
R07DS0287EJ0200
REJ03G0364-0100)
OT-343mod)
PTSP0004ZA-A
BB505C
|
2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Text: CONTENTS Index . 5 General Information . 9
|
Original
|
PDF
|
D-85622
2sk 4207
2SK176
2SK975 equivalent
2SJ177
2SJ318
PM45502C
2SK2225
2sk1058 2SJ162
pwm 100w audio amplifier
2SK1336 equivalent
|
BB505C
Abstract: BB505
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB502C R07DS0283EJ0700 Previous: REJ03G0832-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz
|
Original
|
PDF
|
BB502C
R07DS0283EJ0700
REJ03G0832-0600)
200pF,
OT-343mod)
PTSP0004ZA-A
BB502C
|
|
|
Untitled
Abstract: No abstract text available
Text: BB101C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0821-0300 Previous ADE-208-505A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
|
Original
|
PDF
|
BB101C
REJ03G0821-0300
ADE-208-505A)
200pF,
OT-343mod)
PTSP0004ZA-A
BB101C
|
Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: BB304C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0826-0600 Previous ADE-208-606D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;
|
Original
|
PDF
|
BB304C
REJ03G0826-0600
ADE-208-606D)
200pF,
OT-343mod)
PTSP0004ZA-A
BB304C
|
BB506C
Abstract: No abstract text available
Text: Preliminary Datasheet BB506C R07DS0288EJ0300 Rev.3.00 Jan 10, 2014 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. f = 900 MHz • Low noise
|
Original
|
PDF
|
BB506C
R07DS0288EJ0300
OT-343mod)
PTSP0004ZA-A
BB506C
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
k2056
Abstract: Hitachi DSA002743
Text: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608C Z 4th. Edition May 1, 1998 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)
|
Original
|
PDF
|
BB305C
ADE-208-608C
OT-343mod)
BB305C
D-85622
k2056
Hitachi DSA002743
|
1SV70
Abstract: BB504C
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
|
BB501C
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
|
1SV70
Abstract: BIC703C
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier HITACHI ADE-208-701C Z 4th. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;
|
OCR Scan
|
PDF
|
BB501C
ADE-208-701C
200pF,
OT-343mod)
BB501C
SC-82AB
|