XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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bga616
Abstract: Germanium Power Devices BGA616H6327
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA616 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA616
GPS05605
OT343
726-BGA616H6327XT
H6327
bga616
Germanium Power Devices
BGA616H6327
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA612 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA612
GPS05605
OT343
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Germanium Power Devices
Abstract: GPS05605
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA612 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA612
GPS05605
OT343
Germanium Power Devices
GPS05605
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Germanium Power Devices
Abstract: BGA612
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA612 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA612
GPS05605
OT343
726-BGA612H6327XT
H6327
Germanium Power Devices
BGA612
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Germanium Power Devices
Abstract: No abstract text available
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA616 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA616
GPS05605
OT343
Germanium Power Devices
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A01 MMIC
Abstract: No abstract text available
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA614 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA614
neares20
GPS05605
OT343
A01 MMIC
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IN5048
Abstract: Germanium Power Devices BGA614 Germanium Amplifier
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA614 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA614
GPS05605
OT343
IN5048
Germanium Power Devices
BGA614
Germanium Amplifier
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Rev. 2.1, Sept. 2011 BGA616 Silicon Germanium Broadband MMIC Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2011. All Rights Reserved. Attention please!
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BGA616
GPS05605
OT343
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MGA-53543-TR1G
Abstract: marking 17 sot343 SOT343 lna FR4 dielectric constant at 2.4 Ghz MGA-53543
Text: MGA-53543 50 MHz to 6 GHz High Linear Amplifier Data Sheet Description Features Avago Technologies’s MGA-53543 is a high dynamic range low noise amplifier MMIC housed in a 4-lead SC-70 SOT343 surface mount plastic package. • Lead-free Option Available
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MGA-53543
SC-70
OT343)
5989-3741EN
AV02-0455EN
MGA-53543-TR1G
marking 17 sot343
SOT343 lna
FR4 dielectric constant at 2.4 Ghz
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mga-53453
Abstract: MGA 563 A004R MGA-53543
Text: MGA-53543 50 MHz to 6 GHz High Linear Amplifier Data Sheet Description Features Avago Technologies’s MGA-53543 is a high dynamic range low noise amplifier MMIC housed in a 4-lead SC‑70 SOT343 surface mount plastic package. • Lead-free Option Available
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MGA-53543
MGA-53543
OT343)
5989-3741EN
AV02-0455EN
mga-53453
MGA 563
A004R
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mga-53453
Abstract: A004R MGA-53543 LNA marking 407
Text: MGA-53543 50 MHz to 6 GHz High Linear Amplifier Data Sheet Description Features Avago Technologies’s MGA-53543 is a high dynamic range low noise amplifier MMIC housed in a 4-lead SC‑70 SOT343 surface mount plastic package. • Lead-free Option Available
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MGA-53543
MGA-53543
OT343)
5989-3741EN
AV02-0455EN
mga-53453
A004R
LNA marking 407
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Motorola transistor smd marking codes
Abstract: MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model
Text: RF Manual 9th edition Application and design manual for RF products November 2006 date of release: November 2006 document order number: 9397 750 15817 Henk Roelofs,Vice President & General Manager RF Products Introduction We are excited to introduce the first issue of the RF Manual under our new
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November2006
2006NXPB
Motorola transistor smd marking codes
MARKING V14 SOT23-5
Motorola 622 J112
smd code marking wl sot23
smd code marking rf ft sot23
diode SMD WL sot23
Microwave GaAs FET catalogue
BFG135 amplifier
catv DISTRIBUTION NETWORK diagram
BF256B spice model
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MMIC SOT 343 marking CODE
Abstract: SOT343 42 marking 53 Sot-343 on 5295 transistor
Text: MGA-52543 Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-52543 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA , which is designed for use in LNA and driver stages. While a capable RF/microwave amplifier for any low noise and
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MGA-52543
5989-4192EN
AV02-1271EN
MMIC SOT 343 marking CODE
SOT343 42
marking 53 Sot-343
on 5295 transistor
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marking r4 SOT343
Abstract: marking bms
Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable • 2 4 Gain |S 21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 1 IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA)
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BGA427
25-Technologie
EHA07378
marking r4 SOT343
marking bms
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BGA427
Abstract: No abstract text available
Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable • 2 4 Gain |S 21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 1 IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA)
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BGA427
25-Technologie
EHA07378
OT343
BGA427
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marking r4 SOT343
Abstract: bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948
Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1 Noise figure NF = 2.2 dB at 1.8 GHz
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BGA427
25-Technologie
VPS05605
EHA07378
OT343
marking r4 SOT343
bo 139
INFINEON marking BGA
BGA420
BGA427
E6327
nf 948
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INFINEON marking BGA
Abstract: BGA427 TRANSISTOR BI 185 BGA420
Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable • 2 4 Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S 21| 2 = 22 dB at 1.8 GHz (Appl.2) 1 IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA)
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BGA427
25-Technologie
EHA07378
OT343
INFINEON marking BGA
BGA427
TRANSISTOR BI 185
BGA420
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2SK43 transistor
Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written
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Abstract: No abstract text available
Text: S IE M E N S Si-MMIC-Amplifier BGA427 in SIEGET 25-Technology Preliminary Data # # # # # # # Cascadable 50 n-G ain Block Unconditionally stable Gain |s21|2=18.5 dB at 1.8 GHz appl.1 Gain |s21f =22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (V d=3V, lD=9.4mA)
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BGA427
25-Technology
OT343
Q62702-G0067
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Si-MMIC-Amplifier BGA420 in SIEGET 25-Technology Preliminary Data # # # # # # Cascadable 50 n-G ain Block Unconditionally stable Gain |s 21|2=13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz Vd=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz
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BGA420
25-Technology
OT343
Q62702-G0057
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A03 transistor
Abstract: 3V02 88-FF
Text: S IE M E N S BGA420 Si-MMIC-Amplifier in SIEGET 25-Technoiogy Preliminary Data # • • • # # Cascadable 50 Q-Gain Block Unconditionally stable Gain |s21f= 1 3 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz V d=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz
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BGA420
25-Technoiogy
OT343
Q62702-G0057
A03 transistor
3V02
88-FF
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