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    SOT23-6 MARK CODE CB Search Results

    SOT23-6 MARK CODE CB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    SOT23-6 MARK CODE CB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    829B

    Abstract: marking j5a 832B ZC836BTA ON code 829B ZV931 ZC930 MARKING CF sot23 ZC829ATA marking j3a
    Text: 830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise


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    PDF ZC829, ZDC833, ZMV829, ZMDC830, ZV831 200pA) 829B marking j5a 832B ZC836BTA ON code 829B ZV931 ZC930 MARKING CF sot23 ZC829ATA marking j3a

    ON code 829B

    Abstract: sot23 mark code CB 829B 832B ZMDC830 ZMV835BTA sot23 mark code AE marking j3a marking j5a ZV931
    Text: 830 SERIES SILICON 25V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low


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    PDF ZC829, ZDC833, ZMV829, ZMDC830, ZV831 OT323 OD523 OD323 200pA) ON code 829B sot23 mark code CB 829B 832B ZMDC830 ZMV835BTA sot23 mark code AE marking j3a marking j5a ZV931

    ZV930

    Abstract: 831B 829B sot23 mark code AE sot23 mark code CB marking j5a ZMDC830 ON code 829B ZC930 ZV931
    Text: 830 SERIES SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low


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    PDF ZC829, ZDC833, ZMV829, ZMDC830, ZV831 OT323 OD523 OD323 200pA) ZV930 831B 829B sot23 mark code AE sot23 mark code CB marking j5a ZMDC830 ON code 829B ZC930 ZV931

    sot23 mark code CB

    Abstract: sot23 mark code AE ZMDC830 marking j5a sod-23 ZMV829 mark B1 sot23 ZC829ATA ZV931 MARK E1 SOT23-5
    Text: 830 series Silicon 25V hyperabrupt varactor diodes ZC829, ZDC833, ZMV829, ZMDC830 and ZV831 Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase


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    PDF ZC829, ZDC833, ZMV829, ZMDC830 ZV831 OT323 OD523 OD323 200pA) sot23 mark code CB sot23 mark code AE marking j5a sod-23 ZMV829 mark B1 sot23 ZC829ATA ZV931 MARK E1 SOT23-5

    sot23 mark code AE

    Abstract: ZDC833 ZC835BTA ZC836BTA 829B ZC829ATA
    Text: ZC829, ZMV829 series ZV831, ZDC833 series SILICON 28V HYPERABRUPT VARACTOR DIODES Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise


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    PDF ZC829, ZMV829 ZV831, ZDC833 200pA) sot23 mark code AE ZC835BTA ZC836BTA 829B ZC829ATA

    ZC829ATA

    Abstract: No abstract text available
    Text: ZC829, ZMV829 series ZV831, ZDC833 series SILICON 28V HYPERABRUPT VARACTOR DIODES Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in


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    PDF ZC829, ZMV829 ZV831, ZDC833 200pA) ZC829ATA

    c2a marking

    Abstract: mark B1 sot23 829B 831B ZC832ATA ZC829ATA ZC930 ZV931
    Text: 830 SERIES SILICON 25V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low


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    PDF ZC829, ZDC833, ZMV829, ZMDC830, ZV831 200pA) OT323 OD523 OD323 c2a marking mark B1 sot23 829B 831B ZC832ATA ZC829ATA ZC930 ZV931

    ON Semiconductor 831B

    Abstract: sot23 mark code CB MARK BE diode SOD523 ZC829ATA ZV931 829b 832a AA SOD323 design ideas mark A1 SOT23
    Text: 830 series Silicon 25V hyperabrupt varactor diodes ZC829, ZDC833, ZMV829, ZMDC830 and ZV831 Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase


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    PDF ZC829, ZDC833, ZMV829, ZMDC830 ZV831 OT323 OD523 OD323 200pA) D-81541 ON Semiconductor 831B sot23 mark code CB MARK BE diode SOD523 ZC829ATA ZV931 829b 832a AA SOD323 design ideas mark A1 SOT23

    TCM828

    Abstract: No abstract text available
    Text: TCM828/TCM829 Switched Capacitor Voltage Converters Features Description • • • • • • • The TCM828/TCM829 devices are CMOS “chargepump” voltage converters in ultra-small, 5-Pin SOT-23 packages. They invert and/or double an input voltage which can range from +1.5V to +5.5V. Conversion


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    PDF TCM828/TCM829 TCM828/TCM829 OT-23 TCM828, TCM829. OT-23 TCM828) DS21488B-page TCM828

    S4 74A DIODE schottky

    Abstract: TCM828 TCM828ECT TCM829 TCM829ECT TCM829ECT713 microchip inverter
    Text: TCM828/TCM829 Switched Capacitor Voltage Converters Features Description • • • • • • • The TCM828/TCM829 devices are CMOS “chargepump” voltage converters in ultra-small, 5-Pin SOT-23 packages. They invert and/or double an input voltage which can range from +1.5V to +5.5V. Conversion


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    PDF TCM828/TCM829 TCM828/TCM829 OT-23 TCM828, TCM829. OT-23 TCM828) DS21488B-page S4 74A DIODE schottky TCM828 TCM828ECT TCM829 TCM829ECT TCM829ECT713 microchip inverter

    MARKING W3 SOT23 TRANSISTOR

    Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


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    PDF MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps

    smd code marking 56 sot23-6

    Abstract: marking code 604 SOT23-6 PD-1503 smd zG sot 23 smd marking sot23 W16 ic SMD MARKING CODE ad 5.9 ic ap 2068 PD2029 SMD MARKING ed sot23-5 MARKING CODE SMD IC sot23-5
    Text: PACKAGING Package Information Packaging & Ordering Packaging Solutions for Modern Electronic Design In addition to standard legacy packaging, Pericom leads the industry in smaller, more advanced packaging profiles and footprints for today’s designers. Our offerings include very small packages,


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    PDF PI3USB412 PI74STX1GU04A PI3USBA03 PI74STX2G04 PI3USBA201 PI74STX2G14 PI5A121 PI74STX2G4245 PI5A122 smd code marking 56 sot23-6 marking code 604 SOT23-6 PD-1503 smd zG sot 23 smd marking sot23 W16 ic SMD MARKING CODE ad 5.9 ic ap 2068 PD2029 SMD MARKING ed sot23-5 MARKING CODE SMD IC sot23-5

    FAIRCHILD SOT-23 MARK 1a

    Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
    Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.


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    PDF BC847A BC847B BC847C OT-23 BC846A BC846B BC847A BC847B BC846A FAIRCHILD SOT-23 MARK 1a BC846 SOT23 NPN sot23 mark NF 847C BC846 BC847 fAIRCHILD BC847b

    SOT-23 A8A

    Abstract: a8p transistor MARKING A8C SOT-23 a8j digital transistor ROC SOT 23 SOT-23 A8B mark 17 sot-23 hsmc footprint On semiconductor date Code sot-23 SOT-23 A8f
    Text: HI-SINCERITY Spec. No. : HN200302 Issued Date : 2003.03.01 Revised Date : 2005.01.14 Page No. : 1/6 MICROELECTRONICS CORP. HUN2211 / HUN2212 / HUN2213 / HUN2214 / HUN2215 HUN2216 / HUN2230 / HUN2231 / HUN2232 / HUN2233 HUN2234 / HUN2235 / HUN2236 / HUN2237 / HUN2238


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    PDF HN200302 HUN2211 HUN2212 HUN2213 HUN2214 HUN2215 HUN2216 HUN2230 HUN2231 HUN2232 SOT-23 A8A a8p transistor MARKING A8C SOT-23 a8j digital transistor ROC SOT 23 SOT-23 A8B mark 17 sot-23 hsmc footprint On semiconductor date Code sot-23 SOT-23 A8f

    Untitled

    Abstract: No abstract text available
    Text: SPX3819 500mA, Low-Noise LDO Voltage Regulator FEATURES • ■ ■ ■ ■ ■ ■ Low Noise: 40µV Possible High Accuracy: 1% Reverse Battery Protection Low Dropout: 340mV at Full Load Low Quiescent Current: 90µA Zero Off-Mode Current Fixed Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.0V,


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    PDF SPX3819 500mA, 340mV OT-23, SPX3819R-3 SPX3819R-L-3 OT-23

    Untitled

    Abstract: No abstract text available
    Text: SPX3819 500mA, Low-Noise LDO Voltage Regulator FEATURES • ■ ■ ■ ■ ■ ■ Low Noise: 40µV Possible High Accuracy: 1% Reverse Battery Protection Low Dropout: 340mV at Full Load Low Quiescent Current: 90µA Zero Off-Mode Current Fixed Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.0V,


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    PDF SPX3819 500mA, 340mV OT-23, SPX3819R-3 SPX3819R-L-3 OT-23

    SOT-23 Product Code Top Mark PC

    Abstract: MO-178 MO-229 SPX3819 SPX3819M5 SIPEX SP*9
    Text: SPX3819 500mA, Low-Noise LDO Voltage Regulator FEATURES • ■ ■ ■ ■ ■ ■ Low Noise: 40µV Possible High Accuracy: 1% Reverse Battery Protection Low Dropout: 340mV at Full Load Low Quiescent Current: 90µA Zero Off-Mode Current Fixed Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.0V,


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    PDF SPX3819 500mA, 340mV OT-23, SPX3819R-L-3 OT-23 SPX3819 SOT-23 Product Code Top Mark PC MO-178 MO-229 SPX3819M5 SIPEX SP*9

    Untitled

    Abstract: No abstract text available
    Text: SPX3819 500mA, Low-Noise LDO Voltage Regulator FEATURES • ■ ■ ■ ■ ■ ■ Low Noise: 40µV Possible High Accuracy: 1% Reverse Battery Protection Low Dropout: 340mV at Full Load Low Quiescent Current: 90µA Zero Off-Mode Current Fixed Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.0V,


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    PDF SPX3819 500mA, 340mV OT-23, SPX3819M5-5 SPX3819M5-L-5 OT-23.

    BCW65C

    Abstract: BSR14 SOT23 NE
    Text: BSR14 BSR14 C E SOT-23 B Mark: U8 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics. Absolute Maximum Ratings* Symbol


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    PDF BSR14 OT-23 BCW65C BSR14 SOT23 NE

    Untitled

    Abstract: No abstract text available
    Text: SPX3819 500mA, Low-Noise LDO Voltage Regulator FEATURES • ■ ■ ■ ■ ■ ■ Low Noise: 40µV Possible High Accuracy: 1% Reverse Battery Protection Low Dropout: 340mV at Full Load Low Quiescent Current: 90µA Zero Off-Mode Current Fixed Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.0V,


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    PDF SPX3819 500mA, 340mV OT-23, SPX3819M5-5-0/TR SPX3819M5-L-5-0/TR OT-23.

    low noise LDO SOT23 voltage regulator 3.3V

    Abstract: No abstract text available
    Text: SPX3819 500mA, Low-Noise LDO Voltage Regulator FEATURES • ■ ■ ■ ■ ■ ■ Low Noise: 40µV Possible High Accuracy: 1% Reverse Battery Protection Low Dropout: 340mV at Full Load Low Quiescent Current: 90µA Zero Off-Mode Current Fixed Output: 1.2V, 1.5V, 1.8V, 2.5V, 3.0V,


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    PDF SPX3819 500mA, 340mV OT-23, SPX3819M5-5-0/TR SPX3819M5-L-5-0/TR OT-23. Oct18-06 low noise LDO SOT23 voltage regulator 3.3V

    Untitled

    Abstract: No abstract text available
    Text: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage Rating Unit -6 0 -8 0 V V -6 0 -8 0 -4 -5 0 0 350 150 V V V mA mW °C 357 °CW V cB O KST55 KST56 Collector-Emitter Voltage


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    PDF KST55/56 OT-23 KST55 KST56 KSP55 -100fiA,

    Untitled

    Abstract: No abstract text available
    Text: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector Base Voltage Rating Unit -6 0 -8 0 V V -6 0 -8 0 V V V mA mW "C V cBO KST55 KST56 Collector-Emitter Voltage KST55 KST56


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    PDF KST55/56 OT-23 KST55 KST56 KSP55 KST56 oKST55

    Untitled

    Abstract: No abstract text available
    Text: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector Base Voltage Rating Unit -60 -80 V V T stg -60 -80 -4 -500 350 150 V V V mA mW °C R-m(j-a) 357 °C/W V cB O : KST55 : KST56


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    PDF KST55/56 OT-23 KST55 KST56 KSP55 KST56