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    SOT23-5 TRANSISTOR MARKING LG Search Results

    SOT23-5 TRANSISTOR MARKING LG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    SOT23-5 TRANSISTOR MARKING LG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise:NF=1dB Typ. ,10 dB(Max). z Complementary to 2SA1162. z High voltage and high current. z High hFE linearity. 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.


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    PDF 2SC2712 2SA1162. OT-23 BL/SSSTC021

    sot-23 Marking LG

    Abstract: 2SC2712 SOT 23 LY LY SOT23 transistor marking LG MARKING Lg SOT23 2SA1162 marking LG sot-23 marking LY sot-23 transistor marking code lg
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise:NF=1dB Typ. ,10 dB(Max). z Complementary to 2SA1162. z High voltage and high current. z High hFE linearity. 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.


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    PDF 2SC2712 2SA1162. OT-23 BL/SSSTC021 sot-23 Marking LG 2SC2712 SOT 23 LY LY SOT23 transistor marking LG MARKING Lg SOT23 2SA1162 marking LG sot-23 marking LY sot-23 transistor marking code lg

    npn transistor footprint

    Abstract: TRANSISTOR BL 100 NPN Silicon Epitaxial Planar Transistor KTA2014 KTC4075 SOT 23 LY
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High and excellent DC current gain. z Complementary to KTA2014. z Small package. KTC4075 Pb Lead-free APPLICATIONS z General purpose application. z Switching application.


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    PDF KTC4075 KTA2014. OT-23 BL/SSSTC112 npn transistor footprint TRANSISTOR BL 100 NPN Silicon Epitaxial Planar Transistor KTA2014 KTC4075 SOT 23 LY

    ktc4075

    Abstract: LY SOT23 Vce-10V low noise transistor sot23 SOT 23 LY
    Text: KTC4075 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 — — — Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol Parameter


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    PDF KTC4075 OT-23 OT-23 KTA2014 100mA, ktc4075 LY SOT23 Vce-10V low noise transistor sot23 SOT 23 LY

    Motorola transistor smd marking codes

    Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
    Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


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    sot-23 Marking LG

    Abstract: marking LL SOT-23 f1 transistor sot-23 LY SOT-23 SOT 23 LY 2sc2712
    Text: 2SC2712 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low Noise: NF=1 dB (Typ),10dB(MAX) — Complementary to 2SA1162 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V


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    PDF OT-23 2SC2712 OT-23 2SA1162 100mA, sot-23 Marking LG marking LL SOT-23 f1 transistor sot-23 LY SOT-23 SOT 23 LY 2sc2712

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


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    Motorola transistor smd marking codes

    Abstract: transistor smd marking CODE Wb BFG591 Application Notes toshiba smd marking code transistor diode varicap BB 112 sot323 transistor marking MOTOROLA walkie-talkie transceiver diagram 113 marking code transistor ROHM smd transistor marking A3 sot23 3pin BFG135 amplifier
    Text: th 1 ed ition 10 th th RF manual 10 edition Application and design manual for RF products September 2007 Introduction Welcome to this very special edition of the RF manual. This is our 10th issue – definitely an occasion for celebration! Over the years, the RF manual has become


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    Motorola transistor smd marking codes

    Abstract: MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model
    Text: RF Manual 9th edition Application and design manual for RF products November 2006 date of release: November 2006 document order number: 9397 750 15817 Henk Roelofs,Vice President & General Manager RF Products Introduction We are excited to introduce the first issue of the RF Manual under our new


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    PDF November2006 2006NXPB Motorola transistor smd marking codes MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


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    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


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    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


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    PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    marking LG sot-23

    Abstract: SOT-23 MARKING mn
    Text: Central" CMPTA14E Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR The Central Semiconductor CMPTA14E is an Enhanced version of the CMPTA14 NPN Darlington Transistor. This device is manufac­ tured by the epitaxial planar process, epoxy


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    PDF CMPTA14E OT-23 CMPTA14E CMPTA14 CP307 20-February OT-23 marking LG sot-23 SOT-23 MARKING mn

    Marking lb sot23-5

    Abstract: No abstract text available
    Text: Central" CMPT2907AE semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT PNP SILICON TRANSISTOR The Central Semiconductor CMPT2907AE is an Enhanced version of the CMPT2907A PNP Switching transistor in a SOT-23 surface mount package, designed for switching applications,


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    PDF CMPT2907AE CMPT2907A OT-23 OT-23 20-February Marking lb sot23-5

    marking code 359 sot-23

    Abstract: C2F SOT23 sot-23 Marking LG C2f TRANSISTOR 359 sot23
    Text: Central semiconductor Corp. CMPT2907A DESCRIPTION: PNP SILICON TRANSISTOR The Central Semiconductor CMPT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal


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    PDF CMPT2907A OT-23 150mA, marking code 359 sot-23 C2F SOT23 sot-23 Marking LG C2f TRANSISTOR 359 sot23

    SOT-23 marking code LG

    Abstract: No abstract text available
    Text: Central" Semiconductor Corp. CMPT3640 PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3640 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for saturated switching applications.


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    PDF CMPT3640 OT-23 OT-23 26-September SOT-23 marking code LG

    25CC

    Abstract: 2N5086 2N5401 MMBT5086 MMBT5087 MMBT5088 MMBT5089 MMBT5401 MPSA18 MMBT6517
    Text: DF|t.3b7ES4 0DÔED47 3 | ~ M O T O R O L A SC Í X S T R S / R FD- r 6367254 MOTOROLA SC XSTRS/R > M A X IM U M RATINGS 96D F * Rating Value v CEO 50 Vdc Collector-Base Voltage VcBO 50 Vdc Emitter-Base Voltage Veb O 3.0 Vdc ic 50 mAdc Symbol Max Unit Pd


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Central Semiconductor Corp. CMPT3640 PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3640 type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for saturated switching applications.


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    PDF CMPT3640 OT-23 OT-23 26-September

    PDTA143

    Abstract: PDTA143X
    Text: DISCRETE SEMICONDUCTORS a ffi SHEET PDTA143XT PNP resistor-equipped transistor 1999 Apr 20 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143XT FEATURES • Built-in bias resistors R1 and R2


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    PDF PDTA143XT PDTA143XT SCA63 15002/00/01/pp8 PDTA143 PDTA143X

    p03 transistor 3 pin

    Abstract: p03 transistor
    Text: Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ET FEATURES • Built-in bias resistors R1 and R2 typ. 10 kDeach • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space


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    PDF PDTA114ET PDTC114ET. PDTA114ET p03 transistor 3 pin p03 transistor

    a6j* pnp transistor

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2111LT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    PDF MMUN2111LT1 OT-23 MMUN2111LT1 MMUN2114LT1 GGT322D a6j* pnp transistor

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS a ffi SHEET PDTA114YT PNP resistor-equipped transistor 1999 Apr 20 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114YT FEATURES • Built-in bias resistors R1 and R2


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    PDF PDTA114YT PDTA114Ynics SCA63 15002/00/01/pp8

    Transistor Bo 47

    Abstract: P07 MARKING 3 PIN
    Text: Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA144ET FEATURES • Built-in bias resistors R1 and R2 typ. 47 k ti each 3 • Simplification of circuit design — • Reduces number of components and board space. APPLICATIONS


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    PDF PDTA144ET POTC144ET. Transistor Bo 47 P07 MARKING 3 PIN

    MAM25S

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES PMBT5550 PINNING • Low current max. 300 mA PIN • Low voltage (max. 140 V). 1 2 emitter APPLICATIONS 3 collector DESCRIPTION base • Telephony. DESCRIPTION — 3 NPN high-voltage transistor in a SOT23 plastic package.


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    PDF PMBT5550 PMBT5401. MAM25S MAM25S