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    SOT23-5 MARKING H2 Search Results

    SOT23-5 MARKING H2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    SOT23-5 MARKING H2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A09 N03 MOSFET

    Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
    Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04


    Original     		PDF AD1580-A AD1580-B AD1582-A AD1582-B AD1582-C AD1583-A AD1583-B AD1583-C AD1584-A AD1584-B A09 N03 MOSFET marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BCW69 = H1 BCW70 = H2 Pin configuration 1 = BASE 2 = EMITTER


    Original     		PDF OT-23 BCW69 BCW70 C-120

    BCW69

    Abstract: BCW70
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW69 = H1 BCW70 = H2 Pin configuration 1 = BASE 2 = EMITTER


    Original     		PDF OT-23 BCW69 BCW70 C-120 BCW69 BCW70

    t06 marking sot23

    Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
    Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W


    Original     		PDF 2PA1576Q SC-70 BC808W OT323 2PA1576R BC808-16 2PA1576S BC808-16W t06 marking sot23 BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23

    Marking H2

    Abstract: H2 MARKING marking .H2 BCW70 MARK H2
    Text: SEMICONDUCTOR BCW70 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H2 1 2 Item Marking Description Device Mark H2 BCW70 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF BCW70 OT-23 Marking H2 H2 MARKING marking .H2 BCW70 MARK H2

    H2305

    Abstract: MOSFET 20V 45A mark tp sot23
    Text: HI-SINCERITY Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date :2009,12,15 Page No. : 1/5 MICROELECTRONICS CORP. H2305N H2305N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -4.5A 3 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200807 H2305N H2305N OT-23 OT-23 183oC 217oC 260oC 10sec H2305 MOSFET 20V 45A mark tp sot23

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date : Page No. : 1/5 MICROELECTRONICS CORP. H2305N H2305N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -4.5A 3 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200807 H2305N H2305N OT-23 OT-23 183oC 217oC 260oC 10sec

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200613 Issued Date : 2006.07.01 Revised Date : 2006.07.12 Page No. : 1/4 MICROELECTRONICS CORP. H2302N H2302N Pin Assignment & Symbol 3 N-Channel Enhancement-Mode MOSFET 20V, 2.4A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200613 H2302N H2302N OT-23 183oC 217oC 260oC 10sec

    H2301N

    Abstract: ultra low idss code 619 sot-23
    Text: HI-SINCERITY Spec. No. : MOS200612 Issued Date : 2006.07.01 Revised Date : 2006.07.11 Page No. : 1/4 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol 3 P-Channel Enhancement-Mode MOSFET -20V, -2.2A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200612 H2301N H2301N OT-23 183oC 217oC 260oC 10sec ultra low idss code 619 sot-23

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    H2N7002

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200503 Issued Date : 2005.04.01 Revised Date : 2009.10.09 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage . 60 V


    Original     		PDF MOS200503 H2N7002 OT-23 183oC 217oC 260oC H2N7002

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/6 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -2.2A 3 1 3-Lead Plastic SOT-23 Package Code: P Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200836 H2301N H2301N OT-23 183oC 217oC 260oC 10sec

    H2N7002

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6823 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/4 MICROELECTRONICS CORP. H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage. 60 V


    Original     		PDF HE6823 H2N7002 OT-23 H2N7002

    H2N7002

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200405 Issued Date : 1994.01.25 Revised Date : 2005.09.21 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002 H2N7002 Pin Assignment & Symbol 3 N-Channel MOSFET 60V, 0.2A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200405 H2N7002 H2N7002 OT-23 183oC 217oC 260oC

    ST Microelectronics Transistors

    Abstract: transistors marking HJ hj sot-23 Marking H2 marking .H2 BCW69 BCW70
    Text: BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS • ■ ■ Type Marking BCW 69 H1 BCW 70 H2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BCW69 BCW70 OT-23 ST Microelectronics Transistors transistors marking HJ hj sot-23 Marking H2 marking .H2 BCW69 BCW70

    H2302N

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/7 MICROELECTRONICS CORP. H2302N H2302N Pin Assignment & Symbol 3 N-Channel Enhancement-Mode MOSFET 20V, 2.4A 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200836 H2302N H2302N OT-23 260oC 10sec

    1B marking

    Abstract: No abstract text available
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW BC847A 1B marking

    MARKING 3FS

    Abstract: marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package1)


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 MARKING 3FS marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A

    bf850

    Abstract: marking CODE 1BS BC846-BC850 BC847FB marking 1ks 1bs sot323 1Bs sot-23 marking 1F SOT323 BC846 BC846B
    Text: BC846.-BC850. NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856.-BC860. PNP • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC846. -BC850. BC856. -BC860. BC846A BC846B BC846BW OT323 bf850 marking CODE 1BS BC846-BC850 BC847FB marking 1ks 1bs sot323 1Bs sot-23 marking 1F SOT323 BC846 BC846B

    top marking 1B sot23

    Abstract: marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A top marking 1B sot23 marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23

    Untitled

    Abstract: No abstract text available
    Text: r z 7 SGS-THOMSON ^ 7 # MeramiOTiBiiKiDe BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW69 H1 BCW70 H2 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO AMPLIFICATION AND


    OCR Scan     		PDF BCW69 BCW70 OT-23 06B10 BCW69/BCW70 OT-23 0076D2b