BAS20 SOT23
Abstract: bas21 jss BAS19 BAS20 BAS21
Text: BAS19.BAS21 3 Silicon Switching Diodes High-speed, high-voltage switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking Pin Configuration Package BAS19 JPs 1=A 2 = n.c. 3=C SOT23 BAS20 JRs 1=A 2 = n.c. 3=C SOT23 BAS21 JSs 1=A 2 = n.c. 3=C SOT23 Maximum Ratings
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BAS19.
BAS21
VPS05161
EHA07002
BAS19
BAS20
BAS20 SOT23
bas21 jss
BAS19
BAS20
BAS21
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330 marking diode
Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
Text: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60
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FLLD258
FLLD261
FLLD263
400mA
-200mA
330 marking diode
FLLD263
marking SOT23 V 4 diode
NA MARKING SOT23
FLLD258
FLLD261
diode 100V 80 A
IR 50
DSA003689
marking d63
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Untitled
Abstract: No abstract text available
Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3 High collector current High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage
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SMBTA63,
SMBTA64
SMBTA63
VPS05161
EHP00364
EHP00215
EHP00415
EHP00365
Aug-20-2001
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S2V 80
Abstract: SMBTA63 SMBTA64
Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3 High collector current High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage
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SMBTA63,
SMBTA64
SMBTA63
VPS05161
EHP00364
EHP00215
EHP00415
EHP00365
Nov-30-2001
S2V 80
SMBTA63
SMBTA64
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Untitled
Abstract: No abstract text available
Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3 High collector current High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage
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SMBTA63,
SMBTA64
VPS05161
SMBTA63
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sot23 DIODE marking AV
Abstract: marking D58 FLLD258 FLLD261 FLLD263 330 marking diode DSA003688
Text: SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR FLLD258 ISSUE 2 SEPTEMBER 1995 ✪ 1 2 1 3 2 3 SOT23 PART MARKING DETAIL D58 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current
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FLLD258
400mA
-200mA
sot23 DIODE marking AV
marking D58
FLLD258
FLLD261
FLLD263
330 marking diode
DSA003688
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Untitled
Abstract: No abstract text available
Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23
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BCV27,
BCV47
BCV26,
BCV46
VPS05161
BCV27
BCV47
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Untitled
Abstract: No abstract text available
Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23
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BCV26,
BCV46
BCV27,
BCV47
VPS05161
BCV26
BCV46
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Marking Code FGs
Abstract: No abstract text available
Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23
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BCV27,
BCV47
BCV26,
BCV46
VPS05161
BCV27
BCV47
Marking Code FGs
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BCV26
Abstract: BCV27 BCV46 BCV47
Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23
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BCV26,
BCV46
BCV27,
BCV47
BCV26
VPS05161
EHP00295
BCV26
BCV27
BCV46
BCV47
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Untitled
Abstract: No abstract text available
Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23
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BCV26,
BCV46
BCV27,
BCV47
VPS05161
BCV26
BCV46
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fgs npn
Abstract: BCV26 BCV27 BCV46 BCV47
Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23
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BCV27,
BCV47
BCV26,
BCV46
BCV27
VPS05161
EHP00304
fgs npn
BCV26
BCV27
BCV46
BCV47
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330 marking diode
Abstract: marking SOT23 V 4 diode FLLD258 FLLD261 FLLD263 MARKING P8A DSA003670
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 SEPTEMBER 1995 ✪ DIODE PIN CONNECTION 2 1 3 3 2 1 SOT23 PART MARKING DETAIL P8A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current
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FLLD261
400mA
-200mA
330 marking diode
marking SOT23 V 4 diode
FLLD258
FLLD261
FLLD263
MARKING P8A
DSA003670
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Untitled
Abstract: No abstract text available
Text: SMBD7000/ MMBD7000 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000/ MMBD7000 s5C 1 = A1 Pin Configuration 2 = C2 3=C1/A2 Package SOT23 Maximum Ratings Parameter
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SMBD7000/
MMBD7000
VPS05161
EHA07005
MMBD7000
EHB00137
EHB00138
Feb-18-2002
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transistor smd marking NE
Abstract: transistor smd marking BA RE SOT23 NE CMBT847 transistor smd marking PE
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBT847
100uA,
C-120
transistor smd marking NE
transistor smd marking BA RE
SOT23 NE
CMBT847
transistor smd marking PE
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transistor smd marking PE
Abstract: transistor smd marking BA transistor smd marking BA sot-23 CMBT857 pe sot23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBT857
100uA,
C-120
transistor smd marking PE
transistor smd marking BA
transistor smd marking BA sot-23
CMBT857
pe sot23
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transistor smd marking NE
Abstract: sot-23 marking NE CMBT847 MARKING NE SOT23 MA COM marking
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBT847
100uA,
C-120
transistor smd marking NE
sot-23 marking NE
CMBT847
MARKING NE
SOT23 MA COM marking
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smd transistor marking PA
Abstract: "marking PA" CMBA857
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBA857
100uA,
C-120
smd transistor marking PA
"marking PA"
CMBA857
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NB smd transistor
Abstract: NB SMD SOT-23 NB SOT-23 NPN transistor smd marking nb CMBA847 NB 40 smd transistor smd transistor MARKING nb sot23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBA847
100uA,
C-120
NB smd transistor
NB SMD SOT-23
NB SOT-23 NPN
transistor smd marking nb
CMBA847
NB 40 smd transistor
smd transistor MARKING nb sot23
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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CMBA857
100uA,
C-120
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SOT-143 MARKING 550
Abstract: S852T S868 T0-50 TEMIC S868T BFP183T
Text: Temic Semiconductors TOSO 4 Marking T050 (3) Part Number SOT23 Ibias(niA) Vd(V) SOT143 Gp(dB) (50 Q) BiPMICs (Bipolar Monolithic Integrated Circuit) S858TA1 S858TA3 S868T S860T S872T Marking Part Number 858 TA3 868 860 * VcEO V 30 30 45 3 85 5 3.6 5 1.8
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OT143
S858TA1
S858TA3
S868T
S860T
S872T
OT143
BFP67
BFP92A
BFP93A
SOT-143 MARKING 550
S852T
S868
T0-50
TEMIC S868T
BFP183T
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Untitled
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 - SEPTEMBER 1995 O '- DIODE PIN CO NNECTION — N r^H 1 3 SOT23 PART MARKING DETAIL - P8A A BSO LU TE M A X IM U M RATINGS. PARAM ETER SYM BO L Repetitive Peak Reverse Voltage
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OCR Scan
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FLLD261
f100V,
-200m
FLLD263
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MARKING SY SOT23
Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330
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FLLD261
-200m
FLLD263
MARKING SY SOT23
SY SOT23
MARKING SOT23-3 LF
MARKING P8A
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A ISSUE 3 - OCTOBER 1995_ FEATURES Low equivalent on resistance RCE Mrtl = 350mi2 a t 1A PART MARKING DETAIL - 91A COMPLEMENTARY TYPE- FMMT491A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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FMMT591A
350mi2
FMMT491A
-100m
-50mA,
100MHz
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