SOT23 TRANSISTOR MARKING Y2 Search Results

SOT23 TRANSISTOR MARKING Y2 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TBAW56	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

SOT23 TRANSISTOR MARKING Y2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor y21 sot-23 Abstract: No abstract text available Text: M8550 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y21 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25	Original	M8550 OT-23 OT-23 -100A -100A, -100mA -800mA -800mA, -80mA transistor y21 sot-23	PDF
ss8550 sot-23 Abstract: SS8550 sot-23 Y2 sot23 transistor marking y2 SS8050 Y2 marking Y2 ss8550 ss8050 sot-23 transistor marking y2 SS8050 sot-23 Y2 ss8550 TRANSISTOR Text: SS8550 SOT-23 Transistor PNP SOT-23 1. Base 2.Emitter 3.Collector Features Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Dimensions in inches and (millimeters) Parameter Value Units VCBO Collector-Base Voltage	Original	OT-23 SS8550 OT-23 SS8050 -100A, -100mA -800mA -800mA, -80mA ss8550 sot-23 SS8550 sot-23 Y2 sot23 transistor marking y2 SS8050 Y2 marking Y2 ss8550 ss8050 sot-23 transistor marking y2 SS8050 sot-23 Y2 ss8550 TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8550 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 M8550 -100mA -800mA -800mA, -80mA -20mA	PDF
transistor y21 sot-23 Abstract: M8550 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8550 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 M8550 -100A, -100mA -800mA -800mA, -80mA transistor y21 sot-23 M8550	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550 SOT-23 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2.Emitter 3.Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8550 OT-23 SS8050 -100mA -800mA -800mA, -80mA	PDF
SS8550 sot-23 Y2 Abstract: ss8550 sot-23 transistor ss8050 sot23 transistor marking y2 ss8050 sot-23 MARKING Y2 SS8050 SS8050 equivalent SS8050 sot-23 equivalent transistor SS8550 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550 SOT-23 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2.Emitter 3.Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8550 OT-23 SS8050 SS8550 sot-23 Y2 ss8550 sot-23 transistor ss8050 sot23 transistor marking y2 ss8050 sot-23 MARKING Y2 SS8050 SS8050 equivalent SS8050 sot-23 equivalent transistor SS8550	PDF
SS8550 sot-23 Y2 Abstract: ss8550 sot-23 sot23 transistor marking y2 SS8550 transistor SS8550 ss8550 TRANSISTOR ss8550 Y2 TRANSISTOR ss8550 TRANSISTOR equivalent transistor marking y2 Y2 SOT23 Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8550 Pb z Collector Current. IC= 1.5A） z Complementary To SS8550. z Collector Dissipation: PC=0.3W (TC=25°C Lead-free APPLICATIONS z High Collector Current. SOT-23	Original	SS8550 SS8550. OT-23 BL/SSSTC087 SS8550 sot-23 Y2 ss8550 sot-23 sot23 transistor marking y2 SS8550 transistor SS8550 ss8550 TRANSISTOR ss8550 Y2 TRANSISTOR ss8550 TRANSISTOR equivalent transistor marking y2 Y2 SOT23	PDF
sot23 transistor marking y2 Abstract: Y2 sot23 y2 sot-23 s9016 transistor S9016 sot23 y2 s9016 transistor datasheet MARKING Y2 sot-23 MARKING 16 transistor sot23 transistor marking y2 Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Collector Current. IC= 25mA） z Power dissipation.(PC=200mW S9016 Pb Lead-free APPLICATIONS z AM converter, FM/RM amplifier of low noise. SOT-23 ORDERING INFORMATION	Original	S9016 200mW) OT-23 BL/SSSTC127 sot23 transistor marking y2 Y2 sot23 y2 sot-23 s9016 transistor S9016 sot23 y2 s9016 transistor datasheet MARKING Y2 sot-23 MARKING 16 transistor sot23 transistor marking y2	PDF
BF747 Abstract: MBB400 sot23-4 marking a1 Text: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.	Original	BF747 BF747 MBB400 sot23-4 marking a1	PDF
bf547 philips Abstract: BF547 B12 IC marking code marking code 604 SOT23 Text: BF547 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ Feedback capacitance typically 1 pF Stable oscillator operation	Original	BF547 bf547 philips BF547 B12 IC marking code marking code 604 SOT23	PDF
MMSS8550 Abstract: sot23 transistor marking y2 800ma transistor marking y2 marking code Y2 Text: MCC MMSS8550 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • PNP Silicon Plastic-Encapsulate Transistor SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	MMSS8550 OT-23 625Watts -55OC OT-23 50mAdc, 10Vdc, 30MHz) MMSS8550 sot23 transistor marking y2 800ma transistor marking y2 marking code Y2	PDF
Untitled Abstract: No abstract text available Text: MMSS8550 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • • • PNP Silicon Plastic-Encapsulate Transistor SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	MMSS8550 OT-23 625Watts -55OC OT-23 50mAdc, 10Vdc, 30MHz)	PDF
marking A4t sot23 Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE	Original	1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p	PDF
marking A4t sot23 Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)	Original	1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23	PDF

B12 IC marking code Abstract: BF547 MSB003 Y22 SOT23 transistor y21 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF	Original	BF547 MSB003 B12 IC marking code BF547 MSB003 Y22 SOT23 transistor y21	PDF
MBB400 Abstract: MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation	Original	BF747 MSB003 MBB400 MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23	PDF
mbb400 Abstract: BF747 MSB003 Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation	Original	BF747 MSB003 mbb400 BF747 MSB003	PDF
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6	PDF
W1P 59 transistor Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn	PDF
Pnp transistor smd ba rn Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj	OCR Scan	Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28	PDF
H1P transistor Abstract: sot23 transistor marking y2 Text: Philips Semiconductors Product specification PNP general purpose transistors BCW69; BCW70 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • General purpose switching and amplification.	OCR Scan	BCW71 BCW72. BCW69; BCW70 BCW69 H1P transistor sot23 transistor marking y2	PDF
BFG55A Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60	PDF
TRANSISTOR 131-6 BJ 946 Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16 Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise	OCR Scan	B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16	PDF
TRANSISTOR 58050 Abstract: 58050 transistor Text: Philips Components Datasheet status Product specification date of issue April 1991 BF747 N P N 1 GHz wideband transistor FEATURES QUICK REFERENCE DATA • Stable oscillator operation • High current gain • Good thermal stability. SYMBOL DESCRIPTION The BF747 is a low cost NPN	OCR Scan	BF747 BF747 TRANSISTOR 58050 58050 transistor	PDF

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SOT23 TRANSISTOR MARKING Y2 Search Results

SOT23 TRANSISTOR MARKING Y2 Result Highlights (5)

SOT23 TRANSISTOR MARKING Y2 Datasheets Context Search

transistor y21 sot-23

ss8550 sot-23

Untitled

transistor y21 sot-23

Untitled

SS8550 sot-23 Y2

SS8550 sot-23 Y2

sot23 transistor marking y2

BF747

bf547 philips

MMSS8550

Untitled

marking A4t sot23

marking A4t sot23

B12 IC marking code

MBB400

mbb400

Transistor S8550 2TY

W1P 59 transistor

Pnp transistor smd ba rn

H1P transistor

BFG55A

TRANSISTOR 131-6 BJ 946

TRANSISTOR 58050