DNA 1002
Abstract: TE-5001 n014 jis c 5201-1 511j MARKING T20 SOT23 471j CAPACITOR 470M 471J diodes tvb
Text: NETWORKS Resistors / capacitors / diodes 3 2 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC 1 STRUCTURE 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 4 IDENTIFICATION TYPE COATING COLOR MARKING
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D-25578
DNA 1002
TE-5001
n014
jis c 5201-1
511j
MARKING T20 SOT23
471j CAPACITOR
470M
471J
diodes tvb
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TE-5001
Abstract: MARKING W16 SOT23 HBM W20 rnx w16 DNA 1002 TVC 2 HB IEEE resistor color code RDA Q20 W16 sot 23 acd marking code
Text: NETWORKS Resistors / capacitors / diodes 3 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC 2 1 STRUCTURE 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 5 4 IDENTIFICATION TYPE COATING COLOR MARKING
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OT-23
D-25578
TE-5001
MARKING W16 SOT23
HBM W20
rnx w16
DNA 1002
TVC 2 HB
IEEE resistor color code
RDA Q20
W16 sot 23
acd marking code
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4051 spice models
Abstract: sot23 ria marking
Text: LM4051 Precision Micropower Shunt Voltage Reference General Description Key Specifications LM4051-1.2 Ideal for space critical applications, the LM4051 precision voltage reference is available in the sub-miniature (3 mm x 1.3 mm) SOT-23 surface-mount package. The LM4051’s advanced design eliminates the need for an external stabilizing
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LM4051
OT-23
LM4051-1
LM4051-ADJ.
5-Aug-2002]
4051 spice models
sot23 ria marking
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DNA 1002
Abstract: RNX W16 marking s14 sot23 KPC T16 DNA MARKING CODE KOA KPC T16 Packaging marking code 8 lead soic-n package analog devices MARKING W16 SOT23 CODE DIODE
Text: NETWORKS TECHNOLOGY OF TOMORROW RESISTORS / CAPACITORS / DIODES 3 2 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC STRUCTURE 1 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 5 NETWORKS (PASSIVE COMPONENTS)
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D-25578
DNA 1002
RNX W16
marking s14 sot23
KPC T16
DNA MARKING CODE
KOA KPC T16 Packaging
marking code 8 lead soic-n package analog devices
MARKING W16 SOT23
CODE DIODE
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DNA 1002
Abstract: rnx w16 dn5 marking packaging resistor MARKING W16 SOT23 rnx Q24 DN6 marking diode
Text: NETWORKS TECHNOLOGY OF TOMORROW RESISTORS / CAPACITORS / DIODES 3 2 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC STRUCTURE 1 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 5 NETWORKS (PASSIVE COMPONENTS)
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Fiel70
D-25578
DNA 1002
rnx w16
dn5 marking
packaging resistor
MARKING W16 SOT23
rnx Q24
DN6 marking diode
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Untitled
Abstract: No abstract text available
Text: NETWORKS KOA´S INTEGRATED PASSIVE COMPONENTS 3 THIN FILM ON SILICON TFOS KPC STRUCTURE 2 1 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 4 IDENTIFICATION Specifications given herein may be changed at any time without prior notice.
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D-25578
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LM4051
Abstract: LM4051AIM3-ADJ LM4051BIM3-ADJ MF03A RHA SOT23 ADJUSTABLE CURRENT regulator
Text: LM4051 Precision Micropower Shunt Voltage Reference General Description Key Specifications LM4051-1.2 Ideal for space critical applications, the LM4051 precision voltage reference is available in the sub-miniature (3 mm x 1.3 mm) SOT-23 surface-mount package. The LM4051’s advanced design eliminates the need for an external stabilizing
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LM4051
LM4051-1
LM4051
OT-23
LM4051-ADJ.
LM4051AIM3-ADJ
LM4051BIM3-ADJ
MF03A
RHA SOT23
ADJUSTABLE CURRENT regulator
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RHC resistor
Abstract: LM4051 LM4051AIM3-ADJ LM4051BIM3-ADJ MF03A sot23 ria marking
Text: LM4051 Precision Micropower Shunt Voltage Reference General Description j Low output noise Ideal for space critical applications, the LM4051 precision voltage reference is available in the sub-miniature 3 mm x 1.3 mm SOT-23 surface-mount package. The LM4051’s advanced design eliminates the need for an external stabilizing
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LM4051
LM4051
OT-23
LM4051-1
LM4051-ADJ.
CSP-9-111C2)
CSP-9-111S2)
RHC resistor
LM4051AIM3-ADJ
LM4051BIM3-ADJ
MF03A
sot23 ria marking
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LM4051
Abstract: lm4051adj RHA SOT23 AN-450 LM4041 MF03A LM4051-ADJ sot23 ria marking 01B SOT23 M3 SOT23-6
Text: ご注意:この日本語データシートは参考資料として提供しており内容 が最新でない場合があります。製品のご検討およびご採用に際 しては、必ず最新の英文データシートをご確認ください。
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LM4051-1
LM4051
OT-23
LM4051-ADJ)
10kHz)
LM4051
50ppm/
lm4051adj
RHA SOT23
AN-450
LM4041
MF03A
LM4051-ADJ
sot23 ria marking
01B SOT23
M3 SOT23-6
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sot23 ria marking
Abstract: LM4051
Text: LM4051 LM4051 Precision Micropower Shunt Voltage Reference Literature Number: SNOS491C LM4051 Precision Micropower Shunt Voltage Reference General Description j Low output noise Ideal for space critical applications, the LM4051 precision voltage reference is available in the sub-miniature 3 mm x
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LM4051
LM4051
SNOS491C
OT-23
LM4051-1
sot23 ria marking
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Untitled
Abstract: No abstract text available
Text: LM4051 LM4051 Precision Micropower Shunt Voltage Reference Literature Number: SNOS491C LM4051 Precision Micropower Shunt Voltage Reference General Description j Low output noise Ideal for space critical applications, the LM4051 precision voltage reference is available in the sub-miniature 3 mm x
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LM4051
LM4051
SNOS491C
OT-23
LM4051â
LM4051-1
LM4051-ADJ.
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smd code marking TV sot23
Abstract: SMD MARKING CODE RIA marking code P1R smd code marking sot23 SMD transistors marking code 2.F CE MARKING SOT-23 sot-23 MARKING CODE N C smd transistors BCF70 marking p1r
Text: Low Noise SMD" Transistors Low Noise SMD Transistors Description Mechanical Data Philips Components low-noise transistors are optimized for operation on low level signals as required by audio and other amplifier circuits. All have guaranteed low-current
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OT-23
BC849B
BC849C
BC850B
BC850C
BC859A
BC859B
BC859C
BC860A
smd code marking TV sot23
SMD MARKING CODE RIA
marking code P1R
smd code marking sot23
SMD transistors marking code 2.F
CE MARKING SOT-23
sot-23 MARKING CODE N C
smd transistors
BCF70
marking p1r
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sot23 1fe
Abstract: la 4142
Text: ¡SAMSUNG S EMI CONDUCTOR INC _ IME MMBT4125 D | 711,4142 QG072b7 1 | PNP EPITAXIAL SILICON TRANSISTOR T -a q -ñ GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C> Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage
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OCR Scan
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QG072b7
MMBT4125
OT-23
sot23 1fe
la 4142
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semico
Abstract: MMBT3906 MMBT4125 VC820
Text: ¡ SAMSUNG S E M I C ON D U CT OR INC _ IME MMBT4125 D | 711,4142 QG072b7 1 | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C> Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage
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00072fc7
MMBT4125
MMBT3906
OT-23
100MHz
100KHz
100mA,
300/js,
semico
VC820
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Untitled
Abstract: No abstract text available
Text: MMBD914LT1* MAXIM UM RATINGS Rating Symbol Value Unit R e ve rse V o lta g e Vr 70 V dc F o rw a rd C u rre n t if 2 00 m Adc iF M su rq e 500 m Adc Symbol M ax Unit Pd 225 mW 1.8 m W 'cC R# j a 556 -C 'W pd 300 mW 2.4 m W 'C RtfJA 417 T -W T J ' T stq
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MMBD914LT1*
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itching Diode BAW156LT1 This switching diode has the following features: Motorola Preferred Device Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel Use BAW156LT1 to order the 7 inch/3,000 unit reel
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BAW156LT1
BAW156LT3
inch/10
BAW156LT1
OT-23
O-236AB)
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E50U
Abstract: No abstract text available
Text: M AXIMUM RATINGS Rating Symbol Value VR 250 V dc if 200 m Adc 'F M su rq e 625 mA Symbol Max U n it PD 225 mW 1.8 m W -’C Ro ja 556 °c -w Pd 300 mW 2.4 m W .'X r (ÌJA 4 17 C o n tin u o u s R e ve rse V o lta g e P eak F o rw a rd C u rre n t Peak F o rw a rd S u rg e C u rre n t
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OCR Scan
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BAS21LT1*
OT-23
-236AB)
E50U
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Untitled
Abstract: No abstract text available
Text: M AXIMUM RATINGS Rating Symbol Value VR 75 V dc if 200 m Adc iF M lsu rq e 500 mA C o n tin u o u s R e ve rse V o lta g e P eak F o rw a rd C u rre n t P eak F o rw a rd S u rg e C u rre n t Unit BAS16LT1* CASE 318-07, STYLE 8 SOT-23 TO-236AB) THERMAL CHARACTERISTICS
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OCR Scan
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BAS16LT1*
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: MAXIM UM RATINGS Unit Symbol Value R e verse V o lta g e VR 70 V dc F o rw a rd C u rre n t if 150 m Adc iF M su rq e 500 m Adc Rating P eak F o rw a rd S u rg e C u rre n t BAV99LT1* CASE 318-07, STYLE 11 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic
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OCR Scan
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BAV99LT1*
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: M A X IM U M RATINGS Rating Peak R e verse V o lta g e D.C. R e verse V o lta g e M M B D 28 37 L T 1 M M B D 28 38 L T 1 Peak F o rw a rd C u rre n t A v e ra g e R e c tifie d C u rre n t Unit Symbol Value Vr m 75 V dc Vr 30 V dc *f m 450 300 m Adc [o 150
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OCR Scan
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MMBD2837LT1
MMBD2838LT1
OT-23
O-236AB)
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transistor smd ba rn
Abstract: LM7805 smd 8 pin transistor smd marking 431 transistor smd code marking 431 LM7805 M SMD lm7805 so8 LM7805 acm SMD Transistor 431 ac transistor 431 smd transistor smd marking ND
Text: Semiconductor LM431 Adjustable Precision Zener Shunt Regulator General Description Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range of operation. It is now available in a chip sized pack
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LM431
63Sn/37Pb
BPA04XXX
MO-211,
BPA04AFA
transistor smd ba rn
LM7805 smd 8 pin
transistor smd marking 431
transistor smd code marking 431
LM7805 M SMD
lm7805 so8
LM7805 acm
SMD Transistor 431 ac
transistor 431 smd
transistor smd marking ND
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAS19LT1/D SEMICONDUCTOR TECHNICAL DATA High V oltage Sw itching Diode BAS19LT1 Motorola Preferred Device 3 O CATHODE 14 O 1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit VR 120 V dc if 200 m Adc iF M s u rg e 625 m Adc
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BAS19LT1/D
BAS19LT1
-236A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BAS16LT1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode BAS16LT1 3 O \4 CATHODE O 1 Motorola Preferred Device ANODE MAXIMUM RATINGS Rating Symbol Value Unit Vr 75 V dc if 20 0 m A dc iF M s u rg e 50 0 m A dc Symbol Max
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BAS16LT1/D
BAS16LT1
-------------------------------BAS16LT1/D
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ZC821
Abstract: NB J7 ZC800 marking NB SOT-23 diode marking w8 ZC801 ZC802 ZC803 ZC820 ZC822
Text: HYPERABRUPT VARIABLE CAPACITANCE TUNER DIODES TABLE 6 - SILICO N ION IM PLAN TED H YPERABRUPT TUNER D IO D ES Designed for use in HF, V H F and U HF electronic tuning applications where large capacitance variations and high Q are required. Ion implantation is a sem iconductor doping technique enabling close control of doping and profile. Its
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ZC800,
ZC820
ZC830A
OT-23
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
ZC821
NB J7
ZC800
marking NB SOT-23
diode marking w8
ZC801
ZC802
ZC803
ZC822
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