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    SOT23 MARKING VA Search Results

    SOT23 MARKING VA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    SOT23 MARKING VA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage


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    BSS123. ZXM41N10F PDF

    ZXM41N0F

    Abstract: No abstract text available
    Text: ZXM41N0F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage V DS 100 V Drain-gate voltage V DGR


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    ZXM41N0F ZXM41N0F PDF

    ZXM41N0F

    Abstract: ZXM41N10F
    Text: ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage V DS 100 V Drain-gate voltage V DGR


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    ZXM41N10F ZXM41N0F ZXM41N10F PDF

    BAL74

    Abstract: MARKING SOT23 jbs BAR74 SOT23 BAL74 BCW66
    Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications BAL74 BAR74 !  !  Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol


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    BAL74/BAR74. BAL74 BAR74 BAL74, BAL74 MARKING SOT23 jbs BAR74 SOT23 BAL74 BCW66 PDF

    BAS20 SOT23

    Abstract: bas21 jss BAS19 BAS20 BAS21
    Text: BAS19.BAS21 3 Silicon Switching Diodes High-speed, high-voltage switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking Pin Configuration Package BAS19 JPs 1=A 2 = n.c. 3=C SOT23 BAS20 JRs 1=A 2 = n.c. 3=C SOT23 BAS21 JSs 1=A 2 = n.c. 3=C SOT23 Maximum Ratings


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    BAS19. BAS21 VPS05161 EHA07002 BAS19 BAS20 BAS20 SOT23 bas21 jss BAS19 BAS20 BAS21 PDF

    sot23 DIODE marking AV

    Abstract: marking D58 FLLD258 FLLD261 FLLD263 330 marking diode DSA003688
    Text: SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR FLLD258 ISSUE 2 – SEPTEMBER 1995 ✪ 1 2 1 3 2 3 SOT23 PART MARKING DETAIL – D58 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current


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    FLLD258 400mA -200mA sot23 DIODE marking AV marking D58 FLLD258 FLLD261 FLLD263 330 marking diode DSA003688 PDF

    330 marking diode

    Abstract: marking SOT23 V 4 diode FLLD258 FLLD261 FLLD263 MARKING P8A DSA003670
    Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 – SEPTEMBER 1995 ✪ DIODE PIN CONNECTION 2 1 3 3 2 1 SOT23 PART MARKING DETAIL – P8A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current


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    FLLD261 400mA -200mA 330 marking diode marking SOT23 V 4 diode FLLD258 FLLD261 FLLD263 MARKING P8A DSA003670 PDF

    BAL74

    Abstract: BAR74 sot23 marking code 74
    Text: BAL74/BAR74. Silicon Switching Diode  For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol


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    BAL74/BAR74. BAL74 BAR74 BAL74 BAL74, BAR74 sot23 marking code 74 PDF

    BAL74

    Abstract: BAR74
    Text: BAL74/BAR74. Silicon Switching Diode  For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol


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    BAL74/BAR74. BAL74 BAR74 BAL74 BAL74, BAR74 PDF

    Philips MARKING CODE

    Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
    Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked


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    OT143, OT323, OT343, OT363, OD110, OD323 OD523 BF992 PMBF4416A BF510 Philips MARKING CODE Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363 PDF

    330 marking diode

    Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
    Text: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 – JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL – D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60


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    FLLD258 FLLD261 FLLD263 400mA -200mA 330 marking diode FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3  High collector current  High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage


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    SMBTA63, SMBTA64 SMBTA63 VPS05161 EHP00364 EHP00215 EHP00415 EHP00365 Aug-20-2001 PDF

    S2V 80

    Abstract: SMBTA63 SMBTA64
    Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3  High collector current  High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage


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    SMBTA63, SMBTA64 SMBTA63 VPS05161 EHP00364 EHP00215 EHP00415 EHP00365 Nov-30-2001 S2V 80 SMBTA63 SMBTA64 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 !  !  Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified


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    BAL74/BAR74. BAL74 BAR74 PDF

    BAL74

    Abstract: BAR74 BCW66
    Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 !  !  Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified


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    BAL74/BAR74. BAL74 BAR74 BAL74 BAR74 BCW66 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA13, SMBTA14 NPN Silicon Darlington Transistors 3  High DC current gain  High collector current  Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14 s1N 1=B 2=E 3=C SOT23 VPS05161 Package


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    SMBTA13, SMBTA14 VPS05161 SMBTA13 SMBTA14 EHP00826 EHP00827 EHP00828 EHP00829 Nov-30-2001 PDF

    darlington sot23 npn

    Abstract: S1M sot23 SMBTA13 SMBTA14
    Text: SMBTA13, SMBTA14 NPN Silicon Darlington Transistors 3  High DC current gain  High collector current  Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14 s1N 1=B 2=E 3=C SOT23 VPS05161 Package


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    SMBTA13, SMBTA14 SMBTA13 VPS05161 EHP00826 EHP00827 EHP00828 EHP00829 Jul-12-2001 darlington sot23 npn S1M sot23 SMBTA13 SMBTA14 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23


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    BCV27, BCV47 BCV26, BCV46 VPS05161 BCV27 BCV47 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23


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    BCV26, BCV46 BCV27, BCV47 VPS05161 BCV26 BCV46 PDF

    Marking Code FGs

    Abstract: No abstract text available
    Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23


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    BCV27, BCV47 BCV26, BCV46 VPS05161 BCV27 BCV47 Marking Code FGs PDF

    Untitled

    Abstract: No abstract text available
    Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER


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    ZC2812E ZC2813E lplt-20m ZC2811E PDF

    marking 54 sot23

    Abstract: ZC2812
    Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES IS S U E 3 -NOVEMBER 1995_ Q _ 1. 1 1 3 3 - i XX XX 2 ' 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L


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    ZC2812E ZC2813E ZC2811E marking 54 sot23 ZC2812 PDF

    MARKING SY SOT23

    Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
    Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330


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    FLLD261 -200m FLLD263 MARKING SY SOT23 SY SOT23 MARKING SOT23-3 LF MARKING P8A PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 - SEPTEMBER 1995 O '- DIODE PIN CO NNECTION — N r^H 1 3 SOT23 PART MARKING DETAIL - P8A A BSO LU TE M A X IM U M RATINGS. PARAM ETER SYM BO L Repetitive Peak Reverse Voltage


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    FLLD261 f100V, -200m FLLD263 PDF