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    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    SOT23 MARKING CODE PP Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP431A-HF-3 Adjustable Precision Shunt Regulators Description Features Precision reference voltage B : 2.495V ±1% A : 2.495V ±0.5% Sink current capability: 200mA. Minimum cathode current for regulation: 300µA Equivalent full-range temp coefficient: 30 ppm/°C


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    PDF AP431A-HF-3 200mA. OT-89, OT-23, OT-23-5L, AP431A-HF-3 OT-89 AP431A

    marking code AV sot-23

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP432-3 Low Voltage Adjustable Shunt Regulators Description Features Precision reference voltage B : 1.24V ±1% A : 1.24V ±0.5% Sink current capability: 200mA. Minimum cathode current for regulation: 150µA Equivalent full-range temp coefficient: 30 ppm/°C


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    PDF AP432-3 200mA. OT-89, OT-23, OT-23-5L, AP432-3 AP432 OT-89 marking code AV sot-23

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP432 Adjustable Precision Shunt Regulator ̈ Features ̈ General Description - Precision reference voltage B : 1.24V 1% A : 1.24V 0.5% - Sink current capability: 200mA. - Minimum cathode current for regulation: 150µA - Equivalent full-range temp coefficient: 30 ppm/oC


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    PDF AP432 200mA. OT-89, OT-23, OT-23-5L, AP432 OT-23-5L OT-23 OT-89

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP432 Adjustable Precision Shunt Regulator ̈ Features ̈ General Description - Precision reference voltage B : 1.24V 1% A : 1.24V 0.5% - Sink current capability: 200mA. - Minimum cathode current for regulation: 150µA - Equivalent full-range temp coefficient: 30 ppm/oC


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    PDF AP432 200mA. AP432 OT-23-5L OT-23 OT-89

    Untitled

    Abstract: No abstract text available
    Text: PPJA3412 20V N-Channel Enhancement Mode MOSFET Voltage 20 V SOT-23 4.1A Current Unit: inch mm Features  RDS(ON) , VGS@4.5V, ID@4.1A<56mΩ  RDS(ON) , VGS@2.5V, ID@2.8A<68mΩ  RDS(ON) , VGS@1.8V, ID@1.5A<95mΩ  Advanced Trench Process Technology


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    PDF PPJA3412 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3407 30V P-Channel Enhancement Mode MOSFET Voltage -30 V -3.8A Current SOT-23 Unit: inch mm Features  RDS(ON) , VGS@-10V, ID@-3.8A<65mΩ  RDS(ON) , VGS@-4.5V, ID@-2.6A<80mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Applications,


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    PDF PPJA3407 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 25cations 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3404 30V N-Channel Enhancement Mode MOSFET Voltage 30 V SOT-23 5.6A Current Unit: inch mm Features  RDS(ON) , VGS@10V, ID@5.6A<30mΩ  RDS(ON) , VGS@4.5V, ID@3.5A<45mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.


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    PDF PPJA3404 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    marking A00 sot23-5

    Abstract: No abstract text available
    Text: PPJA3400 30V N-Channel Enhancement Mode MOSFET Voltage 30 V 4.9A Current SOT-23 Unit: inch mm Features  RDS(ON) , VGS@10V, ID@4.9A<38mΩ  RDS(ON) , VGS@4.5V, ID@3.5A<44mΩA  RDS(ON) , VGS@2.5V, ID@2.7A<60mΩ  Advanced Trench Process Technology


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    PDF PPJA3400 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 25cations 2014-REV marking A00 sot23-5

    Untitled

    Abstract: No abstract text available
    Text: PPJA3431 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current SOT-23 -1.5A Unit: inch mm Features  RDS(ON) , VGS@-4.5V, ID@-1.5A<325mΩ  RDS(ON) , VGS@-2.5V, ID@-1.2A<420mΩ  RDS(ON) , VGS@-2.5V, ID@-0.5A<600mΩ  Advanced Trench Process Technology


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    PDF PPJA3431 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2013-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3431 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current SOT-23 -1.5A Unit: inch mm Features  RDS(ON) , VGS@-4.5V, ID@-1.5A<325mΩ  RDS(ON) , VGS@-2.5V, ID@-1.2A<420mΩ  RDS(ON) , VGS@-2.5V, ID@-0.5A<600mΩ  Advanced Trench Process Technology


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    PDF PPJA3431 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2013-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3430 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V SOT-23 2A Current Unit: inch mm Features  RDS(ON) , VGS@4.5V, ID@2.0A<150mΩ  RDS(ON) , VGS@2.5V, ID@1.5A<215mΩ  RDS(ON) , VGS@1.8V, ID@0.5A<400mΩ  Advanced Trench Process Technology


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    PDF PPJA3430 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2013-REV

    ss103

    Abstract: marking code FA sot23
    Text: SS103 SERIES Thin Film Resistor Network Voltage Divider Circuit RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon Industry Standard Packaging 3 lead SOT23 Ratio Tolerances < ±0.05% TCR Tracking Tolerances < ±5 ppm/°C ELECTRICAL1


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    PDF SS103 MIL-STD-2002, 100Vdc -25dB MIL-R-83401) OT-23 marking code FA sot23

    Untitled

    Abstract: No abstract text available
    Text: PPJA3430 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V SOT-23 2A Current Unit: inch mm Features  RDS(ON) , VGS@4.5V, ID@2.0A<150mΩ  RDS(ON) , VGS@2.5V, ID@1.5A<215mΩ  RDS(ON) , VGS@1.8V, ID@0.5A<400mΩ  Advanced Trench Process Technology


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    PDF PPJA3430 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2013-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3414 20V N-Channel Enhancement Mode MOSFET Voltage 20 V SOT-23 5.2A Current Unit: inch mm Features  RDS(ON) , VGS@4.5V, ID@5.2A<36mΩ  RDS(ON) , VGS@2.5V, ID@3.2A<52mΩ  RDS(ON) , VGS@1.8V, ID@1.5A<92mΩ  Advanced Trench Process Technology


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    PDF PPJA3414 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3403 30V P-Channel Enhancement Mode MOSFET Voltage -30 V SOT-23 -3.1A Current Unit: inch mm Features  RDS(ON) , VGS@-10V, ID@-3.1A<98mΩ  RDS(ON) , VGS@-4.5V, ID@-2.2A<114mΩ  RDS(ON) , VGS@-2.5V, ID@-1.1A<165mΩ  Advanced Trench Process Technology


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    PDF PPJA3403 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3409 30V P-Channel Enhancement Mode MOSFET Voltage -30 V SOT-23 -2.9A Current Unit: inch mm Features  RDS(ON) , VGS@-10V, ID@-2.9A<110mΩ  RDS(ON) , VGS@-4.5V, ID@-1.9A<150mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.


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    PDF PPJA3409 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3406 30V N-Channel Enhancement Mode MOSFET Voltage 30 V 4.4A Current SOT-23 Unit: inch mm Features  RDS(ON) , VGS@10V, ID@4.4A<48mΩ  RDS(ON) , VGS@4.5V, ID@2.8A<70mΩ  Advanced Trench Process Technology  Specially Designed for switch Load, PWM applications,


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    PDF PPJA3406 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3405 30V P-Channel Enhancement Mode MOSFET Voltage -30 V -3.6A Current SOT-23 Unit: inch mm Features  RDS(ON) , VGS@-10V, ID@-3.6A<73mΩ  RDS(ON) , VGS@-4.5V, ID@-2.4A<97mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc


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    PDF PPJA3405 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3411 20V P-Channel Enhancement Mode MOSFET Voltage -20 V SOT-23 -3.1A Current Unit: inch mm Features  RDS(ON) , VGS@-4.5V, ID@-3.1A<100mΩ  RDS(ON) , VGS@-2.5V, ID@-2.0A<135mΩ  RDS(ON) , VGS@-1.8V, ID@-1.1A<190mΩ  Advanced Trench Process Technology


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    PDF PPJA3411 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3430 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V SOT-23 2A Current Unit: inch mm Features  RDS(ON) , VGS@4.5V, ID@2.0A<150mΩ  RDS(ON) , VGS@2.5V, ID@1.5A<215mΩ  RDS(ON) , VGS@1.8V, ID@0.5A<400mΩ  Advanced Trench Process Technology


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    PDF PPJA3430 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2013-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3415 20V P-Channel Enhancement Mode MOSFET Voltage -20 V -4.0A Current SOT-23 Unit : inch mm Features  RDS(ON) , VGS@-4.5V, ID@-4.0A<57mΩ  RDS(ON) , VGS@-2.5V, ID@-2.8A<70mΩ  RDS(ON) , VGS@-1.8V, ID@-2.1A<95mΩ  Advanced Trench Process Technology


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    PDF PPJA3415 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3413 20V P-Channel Enhancement Mode MOSFET Voltage -20 V -3.4A Current SOT-23 Unit: inch mm Features  RDS(ON) , VGS@-4.5V, ID@-3.4A<82mΩ  RDS(ON) , VGS@-2.5V, ID@-2.2A<110mΩ  RDS(ON) , VGS@-1.8V, ID@-1.2A<146mΩ  Advanced Trench Process Technology


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    PDF PPJA3413 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJA3416 20V N-Channel Enhancement Mode MOSFET Voltage 20 V SOT-23 5.8A Current Unit: inch mm Features  RDS(ON) , VGS@4.5V, ID@5.8A<27mΩ  RDS(ON) , VGS@2.5V, ID@3.2A<40mΩ  RDS(ON) , VGS@1.8V, ID@1.6A<80mΩ  Advanced Trench Process Technology


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    PDF PPJA3416 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    SOT23 marking sk

    Abstract: sot-23 MARKING CODE SP marking sk sot-23 Zener Diode SOT-23 marking B
    Text: PRECISI0N m ic r o p o w e r BANDGAp SHUNT REFERENCE TEL: 805-498-2111 FEATURES • Small SOT-23 package • Wide Operating Current Range 6 0 |jA to 150mA • Low Dynamic Output Impedance 0.8Q Max. • Low Temperature Coefficient <50 ppm/°C • Direct Replacement for LM4040


    OCR Scan
    PDF LM4040-2 OT-23 150mA LM4040 OT-23 SOT23 marking sk sot-23 MARKING CODE SP marking sk sot-23 Zener Diode SOT-23 marking B