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    SOT23 MARKING 6A DIODE Search Results

    SOT23 MARKING 6A DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    SOT23 MARKING 6A DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Mosfet

    Abstract: SSF2418E 2418E
    Text: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2418E 18mohm OT23-6 2418E Mosfet SSF2418E 2418E

    Untitled

    Abstract: No abstract text available
    Text: BAT64. Silicon Schottky Diodes • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original     		PDF BAT64. BAT64 BAT64-02W BAT64-04 BAT64-04W BAT64-05 BAT64-05W BAT64-06 BAT64-06W

    MARKING N20 SOT-343

    Abstract: ISS181 Switching Diode SOT23 Marking 3D DIODE sot-23 Marking 3D MARKING 3B SOT23-6 marking RA4 sot23 SC74A SC-88A footprint Switching Diode SC-59 Marking 3D ISS181-L
    Text: S W I T C H I N G D I O D E A R R AY S HIGH SPEED SWITCHING DIODE ARRAYS 1/3A 1/3B 1 2 1 1/3C 2 3 1 2 3 2/4 2 3 4 1 2 2 1 5 3 1 2 1 2 4/6A 3 4/6B 5 4 5 6 4 5 6 4 5 6 1 3 2 1 3 2 1 3 2 1 The latest comprehensive data to fully support these parts is readily available.


    Original     		PDF BAS16 BAV70 BAV99 BAV99U BAW56 DA121 DA114 DAN212K DAN222 DAN202U MARKING N20 SOT-343 ISS181 Switching Diode SOT23 Marking 3D DIODE sot-23 Marking 3D MARKING 3B SOT23-6 marking RA4 sot23 SC74A SC-88A footprint Switching Diode SC-59 Marking 3D ISS181-L

    8F sot23

    Abstract: No abstract text available
    Text: BAT240. High Voltage Schottky Diode • Rectifier Schottky diode for telecommunication and industrial applications • High reverse voltage: 240 V • For power supply applications • For clamping and protection in high voltage applications • Pb-free RoHS compliant package 1)


    Original     		PDF BAT240. BAT240A 8F sot23

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > -20V IC = -1.5A Continuous Collector Current ICM = -6A Peak Pulse Current


    Original     		PDF FMMT718 -200mV 625mW FMMT618 AEC-Q101 OT-23 DS31924

    FMMT718

    Abstract: sot-23 15V vebo pnp
    Text: A Product Line of Diodes Incorporated FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > -20V IC = -1.5A Continuous Collector Current ICM = -6A Peak Pulse Current


    Original     		PDF FMMT718 -200mV 625mW FMMT618 AEC-Q101 OT-23 J-STD-020D DS31924 FMMT718 sot-23 15V vebo pnp

    AV02-1377EN

    Abstract: HSMS-285C HSMS-285X S11 SCHOTTKY diode 285L A004R AN1124 HSMP4 ir 0022 avago marking j
    Text: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector ­diodes has been designed and optim­ized for use in small signal Pin <-20 dBm applications at ­frequencies below


    Original     		PDF HSMS-285x OT-23/SOT143 HSMS-282x HSMS-286x HSMS-285x OT-323 SC70-3 OT-363 SC70-6 AV02-1377EN HSMS-285C S11 SCHOTTKY diode 285L A004R AN1124 HSMP4 ir 0022 avago marking j

    S11 SCHOTTKY diode

    Abstract: zero bias diode AV02-1377EN HSMS-285x 285L HSMS-285C AVAGO DATE CODE MARKING A004R AN1124 all silicon metal rectifier diode product List
    Text: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector ­diodes has been designed and optim­ized for use in small signal Pin <-20 dBm applications at ­frequencies below


    Original     		PDF HSMS-285x OT-23/SOT143 HSMS-282x HSMS-286x HSMS-285x OT-323 SC70-3 OT-363 SC70-6 S11 SCHOTTKY diode zero bias diode AV02-1377EN 285L HSMS-285C AVAGO DATE CODE MARKING A004R AN1124 all silicon metal rectifier diode product List

    sot23 718

    Abstract: fmmt718 718 SOT23 sot23-6 marking 718
    Text: A Product Line of Diodes Incorporated FMMT718 20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • • BVCEO > -20V IC = -1.5A Continuous Collector Current ICM = -6A Peak Pulse Current


    Original     		PDF FMMT718 -200mV 625mW FMMT618 AEC-Q101 DS31924 sot23 718 fmmt718 718 SOT23 sot23-6 marking 718

    rclamp0524s

    Abstract: RailClamp® Low Capacitance TVS Diode Array
    Text: RClamp0524S RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features RailClamps® are low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission


    Original     		PDF RClamp0524S 0524S rclamp0524s RailClamp® Low Capacitance TVS Diode Array

    Untitled

    Abstract: No abstract text available
    Text: RClamp0524S RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features RailClamps® are low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission


    Original     		PDF RClamp0524S

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E s a t TRANSISTOR IN SO T-23 Mechanical Data Features • • • • • • • • • • • BVCEO > 25V BVCBO > 35V IC(cont) = 3A Continuous Currrent VCE(sat) < 120mV @ 1A RCE(sat) = 77 mΩ


    Original     		PDF ZXTN649F 120mV ZXTP749F OT-23 J-STD-020 DS31900

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP749F 25V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > -25V BVCEO > -35V forward blocking voltage IC = -3A Continuous Collector Current


    Original     		PDF ZXTP749F -150mV 725mW ZXTN649F AEC-Q101 DS31901

    FR4 substrate fiberglass

    Abstract: AV02-1388EN schottky diode application sot-23 diode common anode t4 HSMS-2865 HSMS-286C
    Text: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optim­ized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications


    Original     		PDF HSMS-286x HSMS286x OT-23/SOT10 HSMS-286x-TR2G HSMS-286x-TR1G HSMS-286x-BLKG HSMS-286x. 2005-20089Avago 5989-4023EN AV02-1388EN FR4 substrate fiberglass schottky diode application sot-23 diode common anode t4 HSMS-2865 HSMS-286C

    ZXTP749FTA

    Abstract: sot-23 Marking 1N8 T-23 ZXTN649F ZXTP749F marking mv sot23 n channel mosfet 1N8 transistor sot23 zxtp749 t-23 p channel mosfet
    Text: A Product Line of Diodes Incorporated ZXTP749F P N P L O W V C E s a t TRANSISTOR IN SO T-23 Features • • • • • • • • • • • Mechanical Data • • • • • • BVCEO > -25V BVCBO > -35V IC(cont) = -3A Continuous Currrent VCE(sat) < -150mV @ -1A


    Original     		PDF ZXTP749F -150mV ZXTN649F OT-23 J-STD-020 DS31901 ZXTP749FTA sot-23 Marking 1N8 T-23 ZXTN649F ZXTP749F marking mv sot23 n channel mosfet 1N8 transistor sot23 zxtp749 t-23 p channel mosfet

    transistor T23

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP749F P N P L O W V C E s a t TRANSISTOR IN SO T-23 Features • • • • • • • • • • • Mechanical Data • • • • • • BVCEO > -25V BVCBO > -35V IC(cont) = -3A Continuous Currrent VCE(sat) < -150mV @ -1A


    Original     		PDF ZXTP749F -150mV ZXTN649F OT-23 J-STD-020 DS31901 transistor T23

    ZXTN649FTA

    Abstract: zxtn649 T-23 ZXTN649F ZXTP749F
    Text: A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E s a t TRANSISTOR IN SO T-23 Features • • • • • • • • • • • Mechanical Data BVCEO > 25V BVCBO > 35V IC(cont) = 3A Continuous Currrent VCE(sat) < 120mV @ 1A RCE(sat) = 77 mΩ


    Original     		PDF ZXTN649F 120mV ZXTP749F OT-23 J-STD-020 DS31900 ZXTN649FTA zxtn649 T-23 ZXTN649F ZXTP749F

    IC RFID 2.45 GHz

    Abstract: HSMS-286B HSMS-286K 915 MHz RFID c65 schottky ZZ 6-lead 34 sot-363 rf power amplifier FR4 epoxy 286l AN1124
    Text: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optim­ized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications


    Original     		PDF HSMS-286x HSMS286x OT-23/SOT143 higheSOT-323 SC70-3 OT-363 SC70-6 HSMS-286x-TR2G HSMS-286x-TR1G HSMS-286x-BLKG IC RFID 2.45 GHz HSMS-286B HSMS-286K 915 MHz RFID c65 schottky ZZ 6-lead 34 sot-363 rf power amplifier FR4 epoxy 286l AN1124

    6A SOT23

    Abstract: sot23 marking 6A diode sot-23 MOSFET Marking code 6A MTN2300N3 Power MOSFET N-Channel sot-23 sot-23 Marking mosfet SOT 23 marking 6A 6A marking sot23 c413n SOT 23 Package equivalent
    Text: Spec. No. : C413N3 Issued Date : 2007.07.05 Revised Date : Page No. : 1/5 CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN2300N3 Features • VDS=20V RDS ON =28mΩ@VGS=4.5V, IDS=6A RDS(ON)=38mΩ@VGS=2.5V, IDS=5.2A • Low on-resistance • Capable of 2.5V gate drive


    Original     		PDF C413N3 MTN2300N3 OT-23 OT-23 UL94V-0 6A SOT23 sot23 marking 6A diode sot-23 MOSFET Marking code 6A MTN2300N3 Power MOSFET N-Channel sot-23 sot-23 Marking mosfet SOT 23 marking 6A 6A marking sot23 c413n SOT 23 Package equivalent

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN649F 25V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 25V BVCBO > 35V forward blocking voltage IC = 3A high Continuous Collector Current


    Original     		PDF ZXTN649F 120mV 725mW ZXTP749F AEC-Q101 DS31900

    FMMT619TA

    Abstract: FMMT619TC FMMT619 FMMT720
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A


    Original     		PDF FMMT619 200mV 625mW FMMT720 AEC-Q101 DS33236 FMMT619TA FMMT619TC FMMT619 FMMT720

    SOT23 marking 619

    Abstract: marking 619 npn sot23
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A


    Original     		PDF FMMT619 200mV 625mW FMMT720 AEC-Q101 DS33236 SOT23 marking 619 marking 619 npn sot23

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A


    Original     		PDF FMMT619 200mV 625mW FMMT720 AEC-Q101 DS33236