Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT23 MARKING 1Z NPN Search Results

    SOT23 MARKING 1Z NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    SOT23 MARKING 1Z NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot23 marking 1z

    Abstract: SOT23 1Z BTA1722N3 BTC4062N3 marking code 1z sot
    Text: CYStech Electronics Corp. Spec. No. : C231N3R Issued Date : 2003.04.12 Revised Date :2005.06.01 Page No. : 1/5 High Voltage NPN Epitaxial Planar Transistor BTC4062N3 Features • High Breakdown Voltage:BVCEO≥350V • Complementary to BTA1722N3 • Pb-free package


    Original
    PDF C231N3R BTC4062N3 BVCEO350V BTA1722N3 OT-23 UL94V-0 sot23 marking 1z SOT23 1Z BTA1722N3 BTC4062N3 marking code 1z sot

    sot23 marking 1z

    Abstract: mmbt6517lt1g MMBT6517LT1 MMBT6517LT3 MMBT6517LT3G
    Text: MMBT6517LT1 High Voltage Transistor NPN Silicon Features •ăPb-Free Packages are Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collectorā - āEmitter Voltage VCEO 350 V Collectorā -āBase Voltage VCBO 350 V Emitterā - āBase Voltage


    Original
    PDF MMBT6517LT1 MMBT6517LT1/D sot23 marking 1z mmbt6517lt1g MMBT6517LT1 MMBT6517LT3 MMBT6517LT3G

    LMBT6517LT1

    Abstract: LMBT6517LT1G LMBT6517LT3G SOT23 1Z
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon LMBT6517LT1G We declare that the material of product compliance with RoHS requirements. Ordering Information Device Marking 3 Shipping LMBT6 517LT1G 1Z 3000/Tape&Reel LMBT6517LT3G 1Z 10000/Tape&Reel


    Original
    PDF LMBT6517LT1G 517LT1G 3000/Tape LMBT6517LT3G 10000/Tape OT-23 LMBT6517LT1 LMBT6517LT1G LMBT6517LT3G SOT23 1Z

    MMBT6517LT1

    Abstract: MMBT6517LT1G MMBT6517LT3 MMBT6517LT3G SOT23 1Z
    Text: MMBT6517LT1 High Voltage Transistor NPN Silicon Features •ăPb-Free Packages are Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collectorā - āEmitter Voltage VCEO 350 Vdc Collectorā -āBase Voltage VCBO 350 Vdc


    Original
    PDF MMBT6517LT1 MMBT6517LT1/D MMBT6517LT1 MMBT6517LT1G MMBT6517LT3 MMBT6517LT3G SOT23 1Z

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon LMBT6517LT1G S-LMBT6517LT1G We declare that the material of product compliance with RoHS requirements. Ordering Information Device LMBT6 517LT1G S-LMBT6 517LT1G LMBT6517LT3G S-LMBT6517LT3G Marking


    Original
    PDF LMBT6517LT1G S-LMBT6517LT1G 517LT1G LMBT6517LT3G S-LMBT6517LT3G 3000/Tape 10000/Tape

    BTN6517N3

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C231N3 Issued Date : 2003.04.12 Revised Date : Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTN6517N3 Features • High Breakdown Voltage:BVCEO≥350V • Complementary to BTP6520N3 Symbol BTN6517N3 SOT-23


    Original
    PDF C231N3 BTN6517N3 BVCEO350V BTP6520N3 OT-23 UL94V-0 BTN6517N3

    MMBT6517

    Abstract: marking mmbt6517
    Text: Transistors SMD Type High Voltage Transistors MMBT6517 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 NPN Silicon +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector


    Original
    PDF MMBT6517 OT-23 MMBT6517 marking mmbt6517

    Untitled

    Abstract: No abstract text available
    Text: Product specification MMBT6517 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 NPN Silicon +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25


    Original
    PDF MMBT6517 OT-23

    sot23 marking 1z NPN

    Abstract: No abstract text available
    Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 High Voltage Transistors 高压三极管 NPN Silicon FHTA44 MAXIMUM RATINGS 最大额定值 Characteristic 特性参数


    Original
    PDF FHTA44) FHTA44 1Z8-2849749 FHTA44 10mAdc 10Vdc) 100mAdc 10mAdc) 20mAdc sot23 marking 1z NPN

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT6517 Features • Marking Code:MMBT6517=1Z NPN High Voltage Transistors Maximum Ratings Symbol VCEO VCBO VEBO IB IC PC TJ TSTG Rating


    Original
    PDF MMBT6517 MMBT6517 100uAdc, 10uAdc, 250Vdc 10Vdc) 10mAdc, 30mAdc,

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT6517 Features • Marking Code:MMBT6517=1Z NPN High Voltage Transistors Maximum Ratings Symbol VCEO VCBO VEBO IB IC PC TJ TSTG Rating


    Original
    PDF MMBT6517 MMBT6517 100uAdc, 10uAdc, 250Vdc 10Vdc) 10mAdc, 30mAdc,

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT6517 Features • x Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1


    Original
    PDF MMBT6517 100uAdc, 10uAdc, 250Vdc

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6517LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 350 Vdc Collector – Base Voltage


    Original
    PDF MMBT6517LT1 236AB)

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original
    PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    FH9014

    Abstract: FHT9018 FHT1815G FHT3356 FHT599 FHT63 FHT64 FHT807-16 FHT807-25 FHT817-16
    Text: SOT-23 三极管(SOT-23 TRANSISTORS) 型号 TYPE VCBO V VCEO V IC mA PD mW FHT20 FHT31 FHT63 FHT64 FHT599 FHT807-16 FHT807-25 FHT807-40 FHT817-16 FHT817-25 FHT817-40 FHT846A FHT846B FHT847A FHT847B FHT847C FHT848A FHT848B FHT848C FHT849A FHT849B FHT849C


    Original
    PDF OT-23 FHT20 FHT31 FHT63 FHT64 FHT599 FHT807-16 FHT807-25 FHT807-40 FH9014 FHT9018 FHT1815G FHT3356 FHT599 FHT63 FHT64 FHT807-16 FHT807-25 FHT817-16

    12v dc power supply with sg3526

    Abstract: MAC97A6 630 LM7580 tl494 inverter 12v 230v design smps 500 watt TL494 MRC 433 mosfet uc3842a uc3842b mc44604p bc558b MTP5P25
    Text: SGJ388/D Aug-2000 半導体総合カタログ 半 導 体 総 合 カ タ ロ グ および はSemiconductor Components Industries, LLC(SCILLC)の商標です。SCILLCはここに記載の製品のすべてについて


    Original
    PDF SGJ388/D Aug-2000 UC3845BV ULN2003A VN0300L VN0610LL VN2222LL VN2406L 12v dc power supply with sg3526 MAC97A6 630 LM7580 tl494 inverter 12v 230v design smps 500 watt TL494 MRC 433 mosfet uc3842a uc3842b mc44604p bc558b MTP5P25

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


    Original
    PDF VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S

    mosfet triggering circuit USING TL494

    Abstract: controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D
    Text: SG388/D Rev. 3, May-2001 Master Components Selector Guide PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original
    PDF SG388/D May-2001 The422-3781 r14525 SG388/D mosfet triggering circuit USING TL494 controller for PWM fan tl494 TIP35C TIP36C sub amplifier circuit diagram 74ls TTL family UC3842 variable voltage smps design with TL431 Buck converter with sg3526 UC3842 smps design with TL431 MC44608P40 equivalent TRANSISTOR MPS2112 MC3364D

    G1 TRANSISTOR SOT 23 PNP

    Abstract: transistor marking 2L
    Text: SOT-23 TRANSISTORS continued Darlingtons The following table is a listing of small-signal devices that have very high hpE and input impedance characteristics. These devices utilize monolithic, cascade transistor construction. Pinout: 1-Base, 2-Emitter, 3-Collector


    OCR Scan
    PDF OT-23 MMBTA14LT1 MMBTA13LT1 MMBTA64LT1 MMBT6517LT1 MMBTA42LT1 MMBT5551LT1 MMBT6520LT1 MMBTA92LT1 MMBT5401LT1 G1 TRANSISTOR SOT 23 PNP transistor marking 2L

    Untitled

    Abstract: No abstract text available
    Text: M A XIM U M RATINGS Symbol Value U nit Collector-Emitter Voltage VCEO 350 Vdc Collector-Base Voltage VCBO 350 Vdc 5.0 Vdc Rating Emitter'Base Voltage vebo Base Current IB 250 mA Collector Current — Continuous ic 500 mA Symbol Max Unit PD 225 mW 1.8 mwrc


    OCR Scan
    PDF MMBT6517LT1* OT-23 O-236AB)

    25CC

    Abstract: 2N5086 2N5401 MMBT5086 MMBT5087 MMBT5088 MMBT5089 MMBT5401 MPSA18 MMBT6517
    Text: DF|t.3b7ES4 0DÔED47 3 | ~ M O T O R O L A SC Í X S T R S / R FD- r 6367254 MOTOROLA SC XSTRS/R > M A X IM U M RATINGS 96D F * Rating Value v CEO 50 Vdc Collector-Base Voltage VcBO 50 Vdc Emitter-Base Voltage Veb O 3.0 Vdc ic 50 mAdc Symbol Max Unit Pd


    OCR Scan
    PDF

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan
    PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    BC5508

    Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
    Text: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes


    OCR Scan
    PDF OT-23 350mW CMPTB099 CMPT2222A trK1000V) CMPS5064 OT-23 OT-89 CQ89D CQ89M BC5508 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan
    PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60