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    SOT23 6 DEVICE MARKING Search Results

    SOT23 6 DEVICE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    SOT23 6 DEVICE MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UM8515 20V P-Channel Power MOSFET UM8515 SOT23-6 General Description The UM8515 is a low threshold P-channel MOSFET, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The devices use a space-saving, small-outline SOT23-6 package.


    Original     		PDF UM8515 UM8515 OT23-6 OT23-6 OT23-ed

    Untitled

    Abstract: No abstract text available
    Text: Diode Network / ESD Suppressor CDA3S06G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designed to provide four channels for active termination of high-speed data signals to eliminate signal undershoot and


    Original     		PDF CDA3S06G OT23-6) MDS0903002A

    Comchip Technology

    Abstract: CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16
    Text: Diode Network / ESD Suppressor CDA3S06-G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand


    Original     		PDF CDA3S06-G OT23-6) MDS0903002A Comchip Technology CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16

    PMBT2222

    Abstract: No abstract text available
    Text: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview


    Original     		PDF PMBT2222; PMBT2222A O-236AB) PMBT2222 O-236AB PMBT2907 PMBT2907A PMBT2222

    PMBT2222A

    Abstract: PMBT2222 Marking Code SMD transistors PMBT2907 PMBT2907A 1P SMD CODE MARKING MARKING CODE SMD IC
    Text: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview


    Original     		PDF PMBT2222; PMBT2222A O-236AB) PMBT2222 O-236AB PMBT2907 PMBT2907A PMBT2222 PMBT2222A Marking Code SMD transistors PMBT2907 PMBT2907A 1P SMD CODE MARKING MARKING CODE SMD IC

    NXP date code marking

    Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
    Text: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview


    Original     		PDF PMBT2222; PMBT2222A O-236AB) PMBT2222 PMBT2222A O-236AB PMBT2907 PMBT2907A NXP date code marking marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p

    marking code Sk transistors

    Abstract: smd code marking ft sot23 SOT23 marking sk sk sot23 marking code 10 sot23 MARKING SMD IC CODE 2PB709ARL 2PB709ASL 2PD601ARL 2PD601ASL
    Text: 2PD601ARL; 2PD601ASL 50 V, 100 mA NPN general-purpose transistors Rev. 01 — 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package.


    Original     		PDF 2PD601ARL; 2PD601ASL O-236AB) 2PD601ARL O-236AB 2PB709ARL 2PB709ASL 2PD601ARL/DG marking code Sk transistors smd code marking ft sot23 SOT23 marking sk sk sot23 marking code 10 sot23 MARKING SMD IC CODE 2PB709ARL 2PB709ASL 2PD601ARL 2PD601ASL

    Untitled

    Abstract: No abstract text available
    Text: UM8516 20V P-Channel Power MOSFET UM8516 SOT23-6 General Description The UM8516 is a low threshold P-channel MOSFET with gate to source TVS protection, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device


    Original     		PDF UM8516 UM8516 OT23-6 OT23-6

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 6 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF BSS138AKA O-236AB) AEC-Q101

    sot23-6 package marking d619

    Abstract: marking D619 d619 zxtd09n50de6ta
    Text: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.


    Original     		PDF ZXTD09N50DE6 ZUMT619 ZXTD09N50DE6TA ZXTD09N50DE6TC OT23-6 OT23-6 sot23-6 package marking d619 marking D619 d619

    d619

    Abstract: sot23-6 package marking d619 transistor d619 data ZUMT619 ZXTD09N50DE6 ZXTD09N50DE6TA ZXTD09N50DE6TC
    Text: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.


    Original     		PDF ZXTD09N50DE6 ZUMT619 OT23-6 OT23-6 ZXTD09N50DE6TA ZXTD09N50D: d619 sot23-6 package marking d619 transistor d619 data ZXTD09N50DE6 ZXTD09N50DE6TA ZXTD09N50DE6TC

    bzx84

    Abstract: No abstract text available
    Text: SO T2 3 BZX84 series Voltage regulator diodes Rev. 6 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description Low-power voltage regulator diodes in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 1 % (BZX84-A), 2 % (BZX84-B) and


    Original     		PDF BZX84 O-236AB) BZX84-A) BZX84-B) BZX84-C)

    TS16949

    Abstract: ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6
    Text: ZXTC2063E6 40V, SOT23-6, complementary medium power transistors Summary BVCEO > 40 -40 V BVECO > 6 (-3)V IC(cont) = 3.5 (-3)A VCE(sat) < 60 (-90)mV @ 1A RCE(sat) = 38 (58)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP


    Original     		PDF ZXTC2063E6 OT23-6, OT23-6 ZXTC2063E6TA D-81541 TS16949 ZXTC2063E6 ZXTC2063E6TA SOT23-6 MARKING 57 NPN SOT23-6

    ZXTC2045E6TC

    Abstract: No abstract text available
    Text: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 • B2 B1 Applications C2 MOSFET and IGBT gate driving E1 E2 Ordering information


    Original     		PDF ZXTC2045E6 OT23-6 OT236 ZXTC2045E6TA ZXTC2045E6TC ZXTC2045E6TC

    W20R

    Abstract: No abstract text available
    Text: Features • DEA 24Q 02 ■ 6 003 ■ ■ Applications Supports 15 KV IEC 61000-4-2 ESD equipment specification* Single device protects as many as 20 lines on exposed pins, communications ports Incorporates 40 bi-directional PN junction diodes Small form factor replaces 20 SOT23


    Original     		PDF DEA002 W20R

    transistor pnp VCEO 12V Ic 1A

    Abstract: ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		PDF ZXTD6717E6 OT23-6 OT23-6 transistor pnp VCEO 12V Ic 1A ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak

    2DEA-2-Q24R

    Abstract: 2DEA-2-Q24T 2DEB-2-W20R 2DEB-2-W20T 2QSP24 BAV99 DEA002 MO-137 MS-013 BIDIRECTIONAL DIODE
    Text: Features • DEA 24Q 02 ■ 003 6 ■ ■ Applications Supports 15 KV IEC 61000-4-2 ESD equipment specification† Single device protects as many as 20 lines on exposed pins, communications ports Incorporates 40 bi-directional PN junction diodes Small form factor replaces 20 SOT23


    Original     		PDF MO-137. MS-013. 2QSP24 WBSOIC20 e/TF0201 2DEA-2-Q24R 2DEA-2-Q24T 2DEB-2-W20R 2DEB-2-W20T 2QSP24 BAV99 DEA002 MO-137 MS-013 BIDIRECTIONAL DIODE

    complementary npn-pnp power transistors

    Abstract: ZETEX medium power complementary transistors TS16949 ZXTC2061E6 ZXTC2061E6TA NPN SOT23-6 RCE SOT23-6
    Text: ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 35 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2061E6 OT23-6, OT23-6 ZXTC2061E6TA D-81541 complementary npn-pnp power transistors ZETEX medium power complementary transistors TS16949 ZXTC2061E6 ZXTC2061E6TA NPN SOT23-6 RCE SOT23-6

    Untitled

    Abstract: No abstract text available
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1A; PNP: VCEO=-60V; VCE(sat)=-0.175V; IC= -1A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		PDF ZXTD6717E6 OT23-6 Continuo725

    Untitled

    Abstract: No abstract text available
    Text: ZXTC2061E6 12V, SOT23-6, complementary medium power transistors Summary BVCEO > 12 -12 V hFE > 500 IC(cont) = 5 (-3.5)A VCE(sat) < 35 (-70)mV @ 1A RCE(sat) = 25 (45)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2061E6 OT23-6, OT23-6 ZXTC2061E6mbH D-81541

    MOSFET TRANSISTOR SMD MARKING CODE nh

    Abstract: No abstract text available
    Text: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV160UP O-236AB) MOSFET TRANSISTOR SMD MARKING CODE nh

    MOSFET TRANSISTOR SMD MARKING CODE NH

    Abstract: PMV160UP smd TRANSISTOR code marking 05 sot23
    Text: SO T2 3 PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV160UP O-236AB) MOSFET TRANSISTOR SMD MARKING CODE NH PMV160UP smd TRANSISTOR code marking 05 sot23

    Untitled

    Abstract: No abstract text available
    Text: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2062E6 OT23-6, OT23-6 ZXTC2062E6TA D-81541

    ZXTC2062E6

    Abstract: TS16949 ZXTC2062E6TA E2 SOT23 complementary npn-pnp power transistors NPN SOT23-6 sot23 npn-pnp
    Text: ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 -20 V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device.


    Original     		PDF ZXTC2062E6 OT23-6, OT23-6 ZXTC2062E6TA D-81541 ZXTC2062E6 TS16949 ZXTC2062E6TA E2 SOT23 complementary npn-pnp power transistors NPN SOT23-6 sot23 npn-pnp