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    Untitled

    Abstract: No abstract text available
    Text: Development General NXP Semiconductors BL-Cellular Systems, MST RF Power Basestations DEV&QAS Title: Bolt down mounting recommendations for Ldmos Power Amplifier Author: Josselin FAY / Raimond DUMOULIN Doc. Nr. Date: 2007/03/27 Bolt down mounting recommendations for


    Original     		PDF OT121A OT262A OT391A OT467A OT502A OT540A OT608A OT895A OT539A

    BLW95

    Abstract: neutralization push-pull PHILIPS 4312 amplifier IEC134 w896 SOT-121A
    Text: PHILIPS I N T ERNATIONAL bSE D • 711002b ÜObBHQB J 323 PHIN BLW95 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB operated high power industrial and m ilita ry transm itting equipment in the h.f. band. The transistor presents excellent performance as a


    OCR Scan     		PDF 00b3403 BLW95 711002b 00b3411 7Z77903 7Z77902 BLW95 neutralization push-pull PHILIPS 4312 amplifier IEC134 w896 SOT-121A