Motorola transistor smd marking codes
Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases
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OT-89
OT-223
C-120,
2001MD,
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING 5c
SMD code
smd TRANSISTOR code marking 2F
toshiba smd marking code transistor
TRANSISTOR SMD MARKING CODE 1P
smd transistor 5c
Diode SOT-23 marking 15d
SMD TRANSISTOR MARKING 6B
TRANSISTOR SMD MARKING CODE 1d
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ic bsp 350
Abstract: A 89 E bss89 sot-223 KA marking code sot 89 marking code s0 BSS87 bsp 87
Text: SIEMENS SIPMOS Small-Signal Transistors VDS /q ^ D S o n BSP 89 BSS 87 BSS 89 = 240 V = 0.29 . . . 0.34 A = 6 -0 Q • N channel • E nhancem ent mode • Packages: SOT-223, SOT-89, TO-92 ') Type Marking Ordering code for version in for version on for version on for version in
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OCR Scan
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OT-223,
OT-89,
702-S
62702-S
E6288:
E6325:
ic bsp 350
A 89 E
bss89
sot-223 KA marking code
sot 89 marking code s0
BSS87
bsp 87
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P025H
Abstract: STF817 STN817 n817
Text: STF817 STN817 PNP MEDIUM POWER TRANSISTORS Type Marking STF817 817 STN817 N817 SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES AVAILABLE IN TAPE & REEL PACKING • ■ 2 1 APPLICATIONS ■ VOLTAGE REGULATION ■ RELAY DRIVER ■ GENERIC SWITCH
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STF817
STN817
OT-223
OT-89
OT-223
STF817
STN817
P025H
n817
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Untitled
Abstract: No abstract text available
Text: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89
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KSD1621
KSB1121
OT-89
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PDF
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tm 1621
Abstract: qs marking sot-89 QS 100 NPN Transistor KSB1121 KSD1621 KSD1621RTF KSD1621STF KSD1621TTF KSD1621UTF MARKING CODE B3 sot-89
Text: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89
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Original
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KSD1621
KSB1121
OT-89
tm 1621
qs marking sot-89
QS 100 NPN Transistor
KSB1121
KSD1621
KSD1621RTF
KSD1621STF
KSD1621TTF
KSD1621UTF
MARKING CODE B3 sot-89
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FJC690
Abstract: FJC790
Text: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * T
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FJC790
FJC690
OT-89
FJC690
FJC790
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Untitled
Abstract: No abstract text available
Text: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * T
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FJC790
FJC790
FJC690
OT-89
FJC790TF
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PDF
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marking E3 sot89
Abstract: my marking code sot 89 sot89 E3
Text: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings
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Original
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FJC690
FJC690
FJC790
OT-89
FJC690TF
marking E3 sot89
my marking code sot 89
sot89 E3
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PDF
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FJC690
Abstract: FJC790
Text: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings
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Original
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FJC690
FJC790
OT-89
FJC690
FJC790
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PDF
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Untitled
Abstract: No abstract text available
Text: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * T
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FJC790
FJC690
OT-89
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PDF
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qs marking sot-89
Abstract: QS 100 NPN Transistor FJC1308 FJC1963 SOT89 MARKING CODE B2 fairchild marking code
Text: FJC1963 NPN Epitaxial Silicon Transistor Features • • • • Audio Power Amplifier Applications Complement to FJC1308 High Collector Current Low Collector-Emitter Saturation Voltage Marking 1 1 9 6 3 P Y W W SOT-89 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter
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FJC1963
FJC1308
OT-89
qs marking sot-89
QS 100 NPN Transistor
FJC1308
FJC1963
SOT89 MARKING CODE B2
fairchild marking code
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PDF
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EHP00
Abstract: marking 2P
Text: SIEMENS NPN Silicon Switching Transistor SXT 2222 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E Maximum Ratings
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OCR Scan
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Q68000-A8330
OT-89
EHP00
marking 2P
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PDF
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Untitled
Abstract: No abstract text available
Text: Connection Diagrams 3 1701 85 3 1 2 MMBD1701 MMBD1703 MMBD1704 MMBD1705 SOT-23 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 3 1703 2NC 1 1704 3 2 1 3 2 1 2 3 1705 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBD1701
MMBD1703
MMBD1704
MMBD1705
OT-23
MMBD1701A
MMBD1703A
MMBD1704A
MMBD1705A
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MMBD1701
Abstract: MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 a1705 marking 05 SOT 89
Text: Connection Diagrams 3 1701 85 3 1 2 MMBD1701 MMBD1703 MMBD1704 MMBD1705 SOT-23 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 3 1703 2NC 1 1704 3 2 1 3 2 1 2 3 1705 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBD1701
MMBD1703
MMBD1704
MMBD1705
OT-23
MMBD1701A
MMBD1703A
MMBD1704A
MMBD1705A
MMBD1701
MMBD1701A
MMBD1703
MMBD1703A
MMBD1704
MMBD1705
a1705
marking 05 SOT 89
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D 1703
Abstract: No abstract text available
Text: M IC D N D U C T D R i MMBD1701 M M BD 1703 M M BD 1704 M M BD 1705 SOT-23 MARKING 85 M M BD 1701A 87 M M BD 1703A 88 M M BD 1704A 89 M M BD 1705A / 1703/A / 1704/A / 1705/A MMBD1701/A / 1703/A / 1704/A / 1705/A 85A 87A 88A 89A High Conductance Low Leakage Diode
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OCR Scan
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MMBD1701/A
MMBD1701/A
1703/A
1704/A
1705/A
OT-23
MMBD1701
D 1703
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS184LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.
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L1SS184LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS181LT1G z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 2.2pF (typ.) z Pb-Free Package is Available. 1
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L1SS181LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS226LT1G Featrues z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 0.9pF (typ.) 1 z Pb-Free Package is Available.
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L1SS226LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR
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LBAS20HT1G
3000/Tape
LBAS20HT3G
10000/Tape
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PDF
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LRB751S-40T1
Abstract: SC-75 SOD3232
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB751S-40T1 Features 1 Small surface mounting type SC-76/SOd323 (2)Low reverse current and low forward voltage. (3)High reliability Construction silicon epitaxial planar SC-79/SOD-523 Pb-Free Package is Available.
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LRB751S-40T1
SC-76/SOd323
SC-79/SOD-523
LRB751S-40T1=
360mm
LRB751S-40T1
SC-75
SOD3232
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode z Applications LRB501V-40T1G Low current rectification z Features 1 1 Small surface mounting type. 2) High reliability. 3) Pb-Free package is available. 2 z Construction SOD-323 Silicon epitaxial planar
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LRB501V-40T1G
OD-323
3000/Tape
LRB501V-40T3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 z Pb-Free package is available SOD–523 Device Marking
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LBA277T1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1GG LRB551V-30T1G 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1 Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF VF=0.45V Typ. at 0.5A)
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LRB551V-30T1GG
LRB551V-30T1G
3000/Tape
LRB551V-30T3G
10000/Tape
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMVL3401T1G This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount package. • Rugged PIN Structure Coupled with Wirebond Construction
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LMVL3401T1G
OD-323
3000/Tape
LMVL3401T3G
10000/Tape
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