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    SOT-89 MARKING 10V Search Results

    SOT-89 MARKING 10V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    SOT-89 MARKING 10V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PXT8050

    Abstract: Y1 SOT-89 marking y1 marking y1 sot-89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 PXT8050 Plastic-Encapsulate Transistors SOT-89 TRANSISTOR NPN FEATURES z Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		OT-89 PXT8050 PXT8550 100mA 800mA 800mA, 30MHz PXT8050 Y1 SOT-89 marking y1 marking y1 sot-89 PDF

    PXT8050

    Abstract: Y2 SOT-89 PXT8550
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors PXT8550 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Compliment to PXT8050 1 2. COLLECTOR 2 MARKING: Y2 3 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		OT-89 PXT8550 OT-89 PXT8050 -100mA -800mA -800mA, -80mA PXT8050 Y2 SOT-89 PXT8550 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR NPN SOT-89-3L FEATURES Low VCE(sat) 1.BASE 123 2.COLLECTOR Marking: DT 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-89-3L 2SD2391 OT-89-3L 100MHz PDF

    BF620

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BF620 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low current (max. 50mA) z High voltage (max. 300V). z Video output stages. 2. COLLECTOR 1 2 3. EMITTER 3 Marking：DC


    Original     		OT-89 BF620 OT-89 100MHz BF620 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1740 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High breadown voltage z Excellent hFE linearlity 2. COLLECTOR 3. EMITTER Marking: AK MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-89-3L 2SA1740 OT-89-3L -300V -50mA -50mA -10mA -150V -50mA, PDF

    BR A44

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A44 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-89-3L OT-89-3L 100mA BR A44 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A94 TRANSISTOR PNP 1. BASE FEATURES  Low Collector-Emitter Saturation Voltage  High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-89-3L OT-89-3L -400V -10mA -100mA -50mA -10mA -50mA PDF

    2SA1740

    Abstract: marking AK
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1740 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z High breadown voltage z Excellent hFE linearlity 2. COLLECTOR 1 2 3. EMITTER Marking: AK 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		OT-89 2SA1740 OT-89 -300V -50mA -50mA -10mA -150V -50mA, 2SA1740 marking AK PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A92 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-89-3L OT-89-3L -200V -300V -10mA -80mA -20mA -10mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L HM879 TRANSISTOR NPN 1. BASE FEATURES z High Current z Low Voltage z General Purpose Amplifier Applications 2. COLLECTOR 3. EMITTER MARKING:879 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-89-3L OT-89-3L HM879 PDF

    P025H

    Abstract: STF42 STF92 transistor marking 551 sot-89
    Text: STF92 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking STF92 692 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-89 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS


    Original     		STF92 OT-89 STF42 OT-89 P025H STF42 STF92 transistor marking 551 sot-89 PDF

    DN3545

    Abstract: DN3545N3 DN3545N8 DN3545ND
    Text: DN3545 DN3545 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for TO-243AA: BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 450V 20Ω 200mA DN3545N3 DN3545N8 DN3545ND * Same as SOT-89. DN5M*


    Original     		DN3545 O-243AA: O-243AA* 200mA DN3545N3 DN3545N8 DN3545ND OT-89. DSPD-3TO92N3 DN3545 DN3545N3 DN3545N8 DN3545ND PDF

    BCP4672

    Abstract: 4672 transistor bcp46 60V transistor npn 2a
    Text: BCP4672 2A, 60V NPN Epitaxial Silicon Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  SOT-89 The BCP4672 is designed for low frequency amplifier applications. 4 MARKING 4672 


    Original     		BCP4672 OT-89 BCP4672 BCP4672-A BCP4672-B 500mA 500mA, 100MHz width380s, 4672 transistor bcp46 60V transistor npn 2a PDF

    BCP1898

    Abstract: No abstract text available
    Text: BCP1898 1A, 100V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The BCP1898 is designed for switching applications. MARKING 4 1 189 8 2 3 A Date Code E


    Original     		BCP1898 OT-89 BCP1898 BCP1898-P BCP1898-Q BCP1898-R 10-Dec-2010 500mA 500mA, PDF

    F MARKING

    Abstract: No abstract text available
    Text: BCP5401 PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. A B C D E F Marking:5401 XXXX xxxx = Date Code


    Original     		BCP5401 OT-89 -120V, -10mA, -50mA, -10mA -50mA F MARKING PDF

    5551

    Abstract: F MARKING
    Text: BCP5551 NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. A B C D E F Marking: 5551 XXXX xxxx = Date Code


    Original     		BCP5551 OT-89 100MHz 01-Jun-2002 5551 F MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89


    Original     		KSD1621 KSB1121 OT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSB1121 PNP Epitaxial Planar Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity • Fast Switching Speed • Complement to KSD1621 Marking 1 1 2 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		KSB1121 KSD1621 OT-89 KSB1121 PDF

    2SB1132

    Abstract: 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q
    Text: 2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4 MARKING 1 2 3 1132 A Date Code E C B CLASSIFICATION OF hFE


    Original     		2SB1132 OT-89 2SB1132-P 2SB1132-Q 2SB1132-R -100mA -500mA, -50mA -50mA, 2SB1132 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q PDF

    transistor marking code 1325

    Abstract: uc3844 transformer design T flip flop pin configuration
    Text: LR745 High Input Voltage SMPS Start-up Circuit Ordering Information Product marking for TO-243AA: Order Number / Package Maximum Input Voltage TO-92 TO-243AA* 450V LR745N3 LR745N8 LR7 where = 2-week alpha date code *Same as SOT-89. Product supplied on 2000 piece carrier tape reels.


    Original     		LR745 LR745N3 O-243AA* LR745N8 O-243AA: OT-89. 240VAC UC3844 transistor marking code 1325 uc3844 transformer design T flip flop pin configuration PDF

    marking code transistor list

    Abstract: FJC690 FJC790
    Text: FJC690 NPN Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC790 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 6 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings


    Original     		FJC690 FJC790 OT-89 FJC690 marking code transistor list FJC790 PDF

    2SC4132

    Abstract: T100 sc-62 package oc sc62
    Text: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SC4132; CB-A-, where ★ is hFE code high breakdown voltage BVqeo = 120 V high transition frequency (fT) low output capacitance (Cob)


    OCR Scan     		2SC4132 OT-89, SC-62) 2SC4132; 2SC4132 0D147Ã T100 sc-62 package oc sc62 PDF

    K 4005 transistor

    Abstract: ic MARKING FZ 2SC4505 T100 T200 2SC4505CE
    Text: 2SC4505 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT3, SOT-89, SC-62) package • package marking: 2SC4505; CE-*, where ★ is hFE code • high voltage BVCEO = 400 V • low collector saturation voltage, typically VCE(sat) = 0.05 V for


    OCR Scan     		2SC4505 OT-89, SC-62) 2SC4505; 00147flb K 4005 transistor ic MARKING FZ 2SC4505 T100 T200 2SC4505CE PDF

    Transistor MARKING CODE AW SOT89

    Abstract: Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62
    Text: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DIM-*, where ★ is hFE code 2SD2153 (MPT3) 1.6 * 0 1 ?T. zH . it sf • excellent current-to-gain characteristics • low collector saturation voltage,


    OCR Scan     		2SD2153 OT-89, SC-62) 2SD2153; 00mfl70 G014fl71 Transistor MARKING CODE AW SOT89 Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62 PDF